-
公开(公告)号：US11255797B2
公开(公告)日：2022-02-22
申请号：US16921738
申请日：2020-07-06
Applicant: KLA Corporation
Inventor： Yung-Ho Alex Chuang , Yinying Xiao-Li , Elena Loginova , John Fielden
Abstract: Strontium tetraborate can be used as an optical material. Strontium tetraborate exhibits high refractive indices, high optical damage threshold, and high microhardness. The transmission window of strontium tetraborate covers a very broad range of wavelengths, from 130 nm to 3200 nm, making the material particularly useful at VUV wavelengths. An optical component made of strontium tetraborate can be incorporated in an optical system, such as a semiconductor inspection system, a metrology system, or a lithography system. These optical components may include mirrors, lenses, lens arrays, prisms, beam splitters, windows, lamp cells or Brewster-angle optics.
-
32.发明申请公开(公告)号：US20210320144A1
公开(公告)日：2021-10-14
申请号：US17197292
申请日：2021-03-10
Applicant: KLA Corporation
Inventor： Abbas Haddadi , Sisir Yalamanchili , John Fielden , Yung-Ho Alex Chuang
IPC: H01L27/146 , H01L27/148
Abstract: An image sensor is fabricated by first heavily p-type doping the thin top monocrystalline silicon substrate of an SOI wafer, then forming a relatively lightly p-doped epitaxial layer on a top surface of the top silicon substrate, where p-type doping levels during these two processes are controlled to produce a p-type dopant concentration gradient in the top silicon substrate. Sensing (circuit) elements and associated metal interconnects are fabricated on the epitaxial layer, then the handling substrate and oxide layer of the SOI wafer are at least partially removed to expose a lower surface of either the top silicon substrate or the epitaxial layer, and then a pure boron layer is formed on the exposed lower surface. The p-type dopant concentration gradient monotonically decreases from a maximum level near the top-silicon/epitaxial-layer interface to a minimum concentration level at the epitaxial layer's upper surface.
-
公开(公告)号：US10943760B2
公开(公告)日：2021-03-09
申请号：US16568110
申请日：2019-09-11
Inventor： Yung-Ho Alex Chuang , Yinying Xiao-Li , Edgardo Garcia Berrios , John Fielden , Masayoshi Nagao
IPC: H01J37/073 , H01J37/28 , H01J37/317
Abstract: An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped.
-
公开(公告)号：US20240250110A1
公开(公告)日：2024-07-25
申请号：US18404530
申请日：2024-01-04
Applicant: KLA Corporation
Inventor： Abbas Haddadi , Devis Contarato , John Fielden , Yung-Ho Alex Chuang
IPC: H01L27/148
CPC classification number: H01L27/14856
Abstract: Image sensors with a tunable floating diffusion (FD) structure for applications such as inspection and metrology are provided. One image sensor includes a sensing node electrically connected to circuits of the image sensor, formed on a first side of a silicon layer adjacent to the circuits, and formed by a Voltage-Controlled Variable Floating Diffusion (VCVFD) structure. The VCVFD structure includes a gate electrode configured to control a variable capacitance of the VCVFD structure via voltage applied to the gate electrode by an electrical connection to the gate electrode. The VCVFD structure converts a charge responsive to electron accumulation in the channel of the circuits to a voltage proportional to an amount of the charge and dependent on the variable capacitance. The VCVFD may also be implemented in an electron-sensor pixel configured for detecting electrons or x-rays as described further herein.
-
35.发明公开公开(公告)号：US20240063248A1
公开(公告)日：2024-02-22
申请号：US18502059
申请日：2023-11-05
Applicant: KLA Corporation
Inventor： Abbas Haddadi , Sisir Yalamanchili , John Fielden , Yung-Ho Alex Chuang
IPC: H01L27/146 , H01L27/148
CPC classification number: H01L27/14687 , H01L27/1464 , H01L27/14806
Abstract: An image sensor is fabricated by first heavily p-type doping the thin top monocrystalline silicon substrate of an SOI wafer, then forming a relatively lightly p-doped epitaxial layer on a top surface of the top silicon substrate, where p-type doping levels during these two processes are controlled to produce a p-type dopant concentration gradient in the top silicon substrate. Sensing (circuit) elements and associated metal interconnects are fabricated on the epitaxial layer, then the handling substrate and oxide layer of the SOI wafer are at least partially removed to expose a lower surface of either the top silicon substrate or the epitaxial layer, and then a pure boron layer is formed on the exposed lower surface. The p-type dopant concentration gradient monotonically decreases from a maximum level near the top-silicon/epitaxial-layer interface to a minimum concentration level at the epitaxial layer's upper surface.
-
Patent Agency Ranking
公开(公告)号：US11815784B2
公开(公告)日：2023-11-14
申请号：US18087236
申请日：2022-12-22
Applicant: KLA Corporation
Inventor： Yung-Ho Alex Chuang , Yinying Xiao-Li , Elena Loginova , John Fielden , Baigang Zhang , Xuefeng Liu , Kelly Ann Weekley Mauser
CPC classification number: G02F1/354 , G02F1/3503 , G02F1/3507 , G02F1/3548 , G02F1/3551
Abstract: A nonlinear crystal grating assembly including two integral nonlinear crystal grating structures having inverted crystal axes and having parallel spaced-apart mesas with predetermined mesa widths arranged such that, when assembled in an interdigitated configuration, the mesas of the two grating structures form an alternating grating pattern that is aligned with a propagation direction of input light, thereby creating a periodic structure for quasi-phase-matching (QPM). The nonlinear crystal grating structures are formed using strontium tetraborate, lithium triborate or another nonlinear crystal material. The nonlinear crystal grating assembly is utilized in a laser assembly in which fundamental wavelengths are doubled and/or summed using intermediate frequency conversion stages, and then a final frequency converting stage utilizes the nonlinear crystal grating assembly to double or sum one or more intermediate light beam frequencies to generate laser output light at high power and photon energy levels. A method and inspection system are also described.
-
公开(公告)号：US11567391B1
公开(公告)日：2023-01-31
申请号：US17555404
申请日：2021-12-18
Applicant: KLA Corporation
Inventor： Yung-Ho Alex Chuang , Yinying Xiao-Li , Elena Loginova , John Fielden , Baigang Zhang , Xuefeng Liu , Kelly Ann Weekley Mauser
Abstract: A nonlinear crystal grating assembly including two integral nonlinear crystal grating structures having inverted crystal axes and having parallel spaced-apart mesas with predetermined mesa widths arranged such that, when assembled in an interdigitated configuration, the mesas of the two grating structures form an alternating grating pattern that is aligned with a propagation direction of input light, thereby creating a periodic structure for quasi-phase-matching (QPM). The nonlinear crystal grating structures are formed using strontium tetraborate, lithium triborate or another nonlinear crystal material. The nonlinear crystal grating assembly is utilized in a laser assembly in which fundamental wavelengths are doubled and/or summed using intermediate frequency conversion stages, and then a final frequency converting stage utilizes the nonlinear crystal grating assembly to double or sum one or more intermediate light beam frequencies to generate laser output light at high power and photon energy levels. A method and inspection system are also described.
-
公开(公告)号：US11543732B2
公开(公告)日：2023-01-03
申请号：US17553705
申请日：2021-12-16
Applicant: KLA Corporation
Inventor： Yung-Ho Alex Chuang , Yinying Xiao-Li , Elena Loginova , John Fielden , Baigang Zhang
Abstract: An optical element includes Strontium tetraborate SrB4O7 (SBO) crystal plates that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency converting stage of a laser assembly to generate laser output light having a wavelength in the range of 125 nm to 183 nm. One or more fundamental light beams having fundamental wavelengths between 1 and 1.1 μm are doubled and/or summed using multiple intermediate frequency conversion stages to generate one or more intermediate light beam frequencies (e.g., second through eighth harmonics, or sums thereof), and then the final frequency converting stage utilizes the optical element to either double a single intermediate light beam frequency or to sum two intermediate light beam frequencies to generate the desired laser output light at high power and photon energy levels. A method and inspection system incorporating the laser assembly is also described.
-
公开(公告)号：US11360032B2
公开(公告)日：2022-06-14
申请号：US17144475
申请日：2021-01-08
Applicant: KLA Corporation
Inventor： Yung-Ho Alex Chuang , Yinying Xiao-Li , Elena Loginova , John Fielden
IPC: G01N21/95 , G01N21/33 , G02B21/00 , G02B5/28 , G02B21/18 , G02B21/16 , G02F1/35 , G02F1/355 , G02B21/06 , G02B1/18 , H01L21/66
Abstract: Strontium tetraborate is used as an optical coating material for optical components utilized in semiconductor inspection and metrology systems to take advantage of its high refractive indices, high optical damage threshold and high microhardness in comparison to conventional optical materials. At least one layer of strontium tetraborate is formed on the light receiving surface of an optical component's substrate such that its thickness serves to increase or decrease the reflectance of the optical component. One or multiple additional coating layers may be placed on top of or below the strontium tetraborate layer, with the additional coating layers consisting of conventional optical materials. The thicknesses of the additional layers may be selected to achieve a desired reflectance of the optical component at specific wavelengths. The coated optical component is used in an illumination source or optical system utilized in a semiconductor inspection system, a metrology system or a lithography system.
-
公开(公告)号：US11237455B2
公开(公告)日：2022-02-01
申请号：US17239561
申请日：2021-04-24
Applicant: KLA Corporation
Inventor： Yung-Ho Alex Chuang , Yinying Xiao-li , Elena Loginova , John Fielden , Baigang Zhang
Abstract: A nonlinear crystal including stacked Strontium tetraborate SrB4O7 (SBO) crystal plates that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency converting stage of a laser assembly to generate laser output light having a wavelength in the range of 125 nm to 183 nm. One or more fundamental light beams having fundamental wavelengths between 1 and 1.1 μm are doubled and/or summed using multiple intermediate frequency conversion stages to generate one or more intermediate light beam frequencies (e.g., second through eighth harmonics, or sums thereof), and then the final frequency converting stage utilizes the nonlinear crystal to either double a single intermediate light beam frequency or to sum two intermediate light beam frequencies to generate the desired laser output light at high power and photon energy levels. A method and inspection system incorporating the laser assembly is also described.
-
-
-
-
-
-
-
-
-
Search Results
41
records
(took 0.083 seconds)
