公开(公告)号：US20090154219A1

公开(公告)日：2009-06-18

申请号：US11957476

申请日：2007-12-16

申请人： Olav Hellwig ,  Bruce D. Terris ,  Jan-Ulrich Thiele

发明人： Olav Hellwig ,  Bruce D. Terris ,  Jan-Ulrich Thiele

IPC分类号： G11C11/063 ,  H01L21/00

CPC分类号： G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  G11C2213/71 ,  H01L27/222 ,  Y10T428/1107 ,  Y10T428/1114 ,  Y10T428/1121 ,  Y10T428/1129

摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. The data storage layers are each formed from a multi-layer structure. At ambient temperatures, the multi-layer structures exhibit an antiparallel coupling state with a near zero net magnetic moment. At higher transition temperatures, the multi-layer structures transition from the antiparallel coupling state to a parallel coupling state with a net magnetic moment. At yet higher temperatures, the multi-layer structure transitions from the antiparallel coupling state to a receiving state where the coercivity of the multi-layer structures drops below a particular level so that magnetic fields from write elements or neighboring data storage layers may imprint data into the data storage layer.

摘要翻译： 公开了磁存储器和方法。 如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。 数据存储层各自由多层结构形成。 在环境温度下，多层结构表现出具有接近零净磁矩的反平行耦合状态。 在较高的转变温度下，多层结构从反平行耦合状态转变为具有净磁矩的平行耦合状态。 在更高的温度下，多层结构从反平行耦合状态转变到多层结构的矫顽力低于特定水平的接收状态，使得来自写入元件或相邻数据存储层的磁场可以将数据压印到 数据存储层。

公开(公告)号：US07018729B2

公开(公告)日：2006-03-28

申请号：US10611240

申请日：2003-06-30

申请人： Daryl J. Pocker ,  Jan-Ulrich Thiele ,  Richard L. White ,  Bing K. Yen

发明人： Daryl J. Pocker ,  Jan-Ulrich Thiele ,  Richard L. White ,  Bing K. Yen

IPC分类号： G11B5/72

CPC分类号： C23C14/0605 ,  C23C14/48 ,  C23C16/26 ,  G11B5/012 ,  G11B5/72 ,  G11B5/82 ,  G11B5/8408 ,  Y10T428/265

摘要： The fabrication of the overcoat layer starts with a low energy ion beam to avoid magnetic layer implantation problems, followed by higher deposition energies where the higher energy atoms are implanted into the previously formed lower energy overcoat layer, rather than the magnetic layer. The energy gradient ion beam deposition process therefore results in a thin overcoat layer that is denser than a comparable layer formed by low energy magnetron sputtering, and which overcoat layer provides good mechanical and corrosion protection to the magnetic layer, without degrading the magnetic properties of the magnetic layer.

摘要翻译： 外涂层的制造以低能离子束开始，以避免磁层注入问题，随后是更高的沉积能量，其中较高的能原子被注入到先前形成的较低能量外涂层而不是磁性层中。 因此，能量梯度离子束沉积过程导致比由低能量磁控管溅射形成的可比层更致密的薄的外涂层，并且该外涂层为磁性层提供良好的机械和腐蚀保护，而不降低磁性能 磁性层。

公开(公告)号：US20060002026A1

公开(公告)日：2006-01-05

申请号：US10882881

申请日：2004-06-30

申请人： Barry Stipe ,  Jan-Ulrich Thiele

发明人： Barry Stipe ,  Jan-Ulrich Thiele

IPC分类号： G11B11/00 ,  B32B3/02 ,  G11B5/82

CPC分类号： G11B5/667 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/65 ,  G11B5/7325 ,  G11B5/743 ,  G11B5/82 ,  G11B5/84

摘要： A recording medium according to the invention has a magnetic recording layer with an L10 magnetic material deposited with a (111) preferred orientation and soft underlayer (SUL). One set of embodiments includes an intermediate layer (seed layer or underlayer) between the L10 media and SUL. The intermediate layer can be a close-packed surface structure (triangular lattice) to promote (111) orientation of the L10 media. For example, the intermediate layer can be a (111) oriented, face-centered-cubic (fcc) material such as platinum, palladium, iridium, rhodium, FePt, FePd, or FePdPt alloys; or the intermediate layer can be a (100) oriented hexagonal-close-packed (hcp) material such as ruthenium, rhenium, or osmium. Alternatively, the intermediate layer can be an amorphous material. The L10 recording layer of the invention can be deposited with a matrix material to form grain boundaries and provide magnetic isolation of the grains of L10 material.

摘要翻译： 根据本发明的记录介质具有具有沉积有（111）优选取向和软底层（SUL）的L 1 O 3磁性材料的磁记录层。 一组实施例包括在L 1 O 2介质和SUL之间的中间层（种子层或底层）。 中间层可以是紧密堆积的表面结构（三角形晶格），以促进L 1 O 3介质的（111）取向。 例如，中间层可以是（111）取向的面心立方（fcc）材料，例如铂，钯，铱，铑，FePt，FePd或FePdPt合金; 或中间层可以是（100）取向的六方密堆积（hcp）材料，例如钌，铼或锇。 或者，中间层可以是无定形材料。 本发明的L 1 O 0记录层可以用基质材料沉积以形成晶界并提供L 1 O 3材料的晶粒的磁性隔离。

公开(公告)号：US20050281081A1

公开(公告)日：2005-12-22

申请号：US10869315

申请日：2004-06-16

申请人： Eric Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

发明人： Eric Fullerton ,  Stefan Maat ,  Jan-Ulrich Thiele

IPC分类号： G11C11/15 ,  G11C11/16

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.

摘要翻译： 一种用于磁随机存取存储器阵列的磁存储单元，其使用FeRh的反铁磁性铁磁转变特性来协助控制存储器单元的切换。

公开(公告)号：US06969447B2

公开(公告)日：2005-11-29

申请号：US10756556

申请日：2004-01-12

申请人： Daryl J. Pocker ,  Jan-Ulrich Thiele ,  Bond-Yen Ting ,  Richard Longstreth White ,  Bing K. Yen

发明人： Daryl J. Pocker ,  Jan-Ulrich Thiele ,  Bond-Yen Ting ,  Richard Longstreth White ,  Bing K. Yen

IPC分类号： C23C14/06 ,  C23C14/34 ,  G11B5/012 ,  G11B5/72 ,  G11B5/82 ,  G11B5/84 ,  H01F41/32 ,  B05D1/18

CPC分类号： C23C14/345 ,  C23C14/0658 ,  G11B5/012 ,  G11B5/72 ,  G11B5/82 ,  G11B5/8408 ,  H01F41/32

摘要： A method for sputtering a thin film protective layer with improved durability is disclosed. The method reduces kinetic energy of the ions of the overcoat material during the initial period of deposition to form a buffering interface which reduces the interpenetration of the atoms of the protective layer into the underlying film. In the method of the invention the sputtering of the overcoat preferably begins with zero (or very low) voltage applied to the underlying film resulting in minimal ion implantation in the underlying film. The “high energy” phase of the process begins with increases in the magnitude of the negative bias voltage applied to the underlying film. The higher energy imparted to ions in the plasma result in a denser and harder film being formed over the initial buffer layer. The protective layer preferably comprises carbon and nitrogen.

摘要翻译： 公开了一种用于溅射具有改善的耐久性的薄膜保护层的方法。 该方法在初始沉积期间降低外涂层材料的离子的动能，形成缓冲界面，从而减少保护层原子相互渗透到下面的膜中。 在本发明的方法中，外涂层的溅射优选以施加到下面的膜的零（或非常低的）电压开始，导致在底层膜中的最小离子注入。 该过程的“高能”阶段从施加到底层薄膜的负偏置电压的大小的增加开始。 在等离子体中赋予离子的较高能量导致在初始缓冲层上形成更致密和更硬的膜。 保护层优选包含碳和氮。

公开(公告)号：US06950260B2

公开(公告)日：2005-09-27

申请号：US09874673

申请日：2001-06-04

申请人： Kevin Robert Coffey ,  Robert Edward Fontana, Jr. ,  Jan-Ulrich Thiele

发明人： Kevin Robert Coffey ,  Robert Edward Fontana, Jr. ,  Jan-Ulrich Thiele

IPC分类号： G11B5/02 ,  G11B5/55 ,  G11B5/596 ,  G11B27/36

CPC分类号： G11B5/02 ,  G11B5/5521 ,  G11B5/59683

摘要： A magnetic recording system is provided having a write head employing a combination of magnetic write field gradient and thermal gradient to write data on a ‘thermal spring’ magnetic recording media. The write head comprises a magnetic element using a write current to induce a magnetic write field at the magnetic media and a thermal element using a very small aperture laser to heat a portion of the media. The thermal spring magnetic media comprises [comprises] first and second stacks providing two exchange coupled ferromagnetic layers having different Curie temperatures [The first stack has a high magneto-crystalline anisotropy, a relatively low saturation magnetization and a low Curie temperature.] [The second stack has a relatively low magneto-crystalline anisotropy, a high saturation magnetization and a high Curie temperature.] The magnetic field gradient and the thermal gradient are arranged to substantially overlap at the trailing edge of the heated portion of the magnetic media allowing data at high density with high thermal stability to be recorded on the rapidly cooling thermal spring magnetic recording media.

摘要翻译： 提供磁记录系统，其具有采用磁写场梯度和热梯度的组合的写头，以在“温度弹簧”磁记录介质上写入数据。 写头包括使用写入电流以在磁性介质上引起磁写入场的磁性元件，以及使用非常小的孔径激光器加热介质的一部分的热元件。 热弹簧磁介质包括[包括]第一和第二堆叠，提供具有不同居里温度的两个交换耦合铁磁层[第一堆叠具有高磁晶各向异性，相对低的饱和磁化强度和低居里温度]。[第二 堆叠具有相对较低的磁晶各向异性，高饱和磁化强度和高居里温度。]磁场梯度和热梯度被布置成在磁介质的加热部分的后缘处基本上重叠，允许高数据 具有高热稳定性的密度被记录在快速冷却的热弹簧磁记录介质上。