公开(公告)号：US07711285B2

公开(公告)日：2010-05-04

申请号：US10595249

申请日：2004-10-01

申请人： Takashi Makiura ,  Takashi Kubo ,  Koichi Moriyama ,  Shunichi Hayashiyama ,  Mitsuru Ogura ,  Tetsuya Yamaguchi

发明人： Takashi Makiura ,  Takashi Kubo ,  Koichi Moriyama ,  Shunichi Hayashiyama ,  Mitsuru Ogura ,  Tetsuya Yamaguchi

IPC分类号： G03G15/08

CPC分类号： G03G21/10

摘要： A cleaning device is provided with a cleaning unit (35) disposed downstream from a position at which a toner image is transferred to a paper. The cleaning unit (35) is provided with a cleaning blade (35c) for scraping off residual toner attached to an image bearing member and a toner catching sheet (35e) for preventing the residual toner or paper dust which have been scraped off from falling outside the cleaning unit. The free length in the toner catching sheet (35e) between affixed positions of a first end portion which is affixed to the cleaning unit (35) and a second end portion which abuts an outer circumferential portion of the image bearing member is determined by an amount of paper dust buildup on the outer circumferential portion of the image bearing member.

摘要翻译： 清洁装置设置有设置在调色剂图像被转印到纸张的位置的下游的清洁单元（35）。 清洁单元（35）设置有用于刮除附着在图像承载部件上的残留调色剂的清洁刮板（35c）和用于防止被刮掉的残留调色剂或纸粉尘落在外面的调色剂接收片（35e） 清洁单元。 在固定到清洁单元（35）的第一端部的固定位置与邻接图像承载部件的外周部分的第二端部之间的调色剂捕获片（35e）中的自由长度由量 在图像承载部件的外周部分积聚纸屑。

公开(公告)号：US20090263159A1

公开(公告)日：2009-10-22

申请号：US12420091

申请日：2009-04-08

申请人： Kenichi Isomi ,  Tetsushi Ito ,  Hirotsugu Akamatsu ,  Tetsuya Yamaguchi ,  Shuichi Mochizuki

发明人： Kenichi Isomi ,  Tetsushi Ito ,  Hirotsugu Akamatsu ,  Tetsuya Yamaguchi ,  Shuichi Mochizuki

IPC分类号： G03G15/00

CPC分类号： G03G15/0105 ,  G03G15/5008 ,  G03G2215/0132

摘要： An image forming apparatus including: a first and a second photoconductor groups constituted of one or more photoconductors respectively; a first and a second drive control sections for controlling the drive of the first and the second photoconductor groups respectively to rotate the photoconductors thereof, wherein the rotational phases of the first photoconductor group and the second photoconductor group are adjusted to be matched therebetween; and the first and the second drive control sections control so that the first and the second photoconductor groups are driven simultaneously with an equal target speed during a formation of a image, wherein an initial drive speed is lower than a predetermined speed for image-formation, and after the first and the second photoconductor groups reaches the initial drive speed, the target speed is changed from the initial drive speed to the speed for image-formation.

摘要翻译： 一种图像形成装置，包括：分别由一个或多个感光体构成的第一和第二光电导体组; 第一和第二驱动控制部分，用于分别控制第一和第二光电导体组的驱动以旋转其感光体，其中调节第一光电导体组和第二光电导体组的旋转相位以使其匹配; 第一驱动控制部和第二驱动控制部进行控制，使得在形成图像期间以相同的目标速度同时驱动第一和第二光电导体组，其中初始驱动速度低于用于图像形成的预定速度， 并且在第一和第二光电导体组达到初始驱动速度之后，目标速度从初始驱动速度变为图像形成速度。

公开(公告)号：US20080201682A1

公开(公告)日：2008-08-21

申请号：US12081431

申请日：2008-04-16

申请人： Naoyuki Shigyo ,  Tetsuya Yamaguchi

发明人： Naoyuki Shigyo ,  Tetsuya Yamaguchi

IPC分类号： G06F17/50

CPC分类号： H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of designing a wiring structure of an LSI is capable of reducing a capacitance variation ratio ΔC/C or a resistance-by-capacitance variation ratio Δ(RC)/(RC) of the wiring structure. The method sets a process-originated variation ratio (∈P) for the wiring structure, a tolerance (ξC) for the capacitance variation ratio (ΔC/C), and a tolerance (ξRC) for the resistance-by-capacitance variation ratio (Δ(RC)/(RC)), evaluates a fringe capacitance ratio (F=CF/CP) according to a fringe capacitance CF and parallel-plate capacitance CP of the wiring structure, and determines the wiring structure so that the fringe capacitance ratio (F) may satisfy the following: For    Δ   C C  ≤ ξ C ,  F ≥ δ P ξ C - 1 ( 1 ) For    Δ  ( RC ) RC  ≤ ξ RC ,  F ≤ ( 1 - δ P )  δ P δ P - ξ RC - 1 ( 2 ) The method employs an equivalent-variations condition defined as |ΔC/C|=|Δ(RC)/(RC)| to determine the shape parameters of each wire of the wiring structure.

公开(公告)号：US07259412B2

公开(公告)日：2007-08-21

申请号：US11095592

申请日：2005-04-01

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Masayuki Ayabe ,  Hisanori Ihara

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Masayuki Ayabe ,  Hisanori Ihara

IPC分类号： H01L29/76

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14643

摘要： A solid state imaging device includes a substrate of a first conductivity type. A transistor, which includes a first gate electrode and a first and second impurity areas, is provided on a surface of the substrate. The first and second impurity areas are formed in the surface of the substrate and sandwich a region under the first gate electrode. A third impurity area of a second conductivity type is formed in the surface of the substrate and spaced from the second impurity area at an opposite side to the first gate electrode. A fourth impurity area is formed under the second impurity area and connected to the third impurity area. A second gate electrode is provided above the substrate. A fifth impurity area of the second conductivity type is formed in the surface of the substrate. The third and fifth impurity areas sandwich a region under the second gate electrode.

摘要翻译： 固态成像装置包括第一导电类型的衬底。 在衬底的表面上设置包括第一栅极电极和第一和第二杂质区域的晶体管。 第一和第二杂质区域形成在衬底的表面中并夹着第一栅电极下的区域。 第二导电类型的第三杂质区域形成在衬底的表面中，并且与第一栅电极相对的一侧与第二杂质区隔开。 在第二杂质区下方形成第四杂质区，并与第三杂质区连接。 在基板上设置第二栅电极。 第二导电类型的第五杂质区域形成在衬底的表面中。 第三和第五杂质区夹在第二栅电极下方的区域。

公开(公告)号：US07224003B2

公开(公告)日：2007-05-29

申请号：US11387819

申请日：2006-03-24

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/0328

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US20070108487A1

公开(公告)日：2007-05-17

申请号：US11558200

申请日：2006-11-09

申请人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

发明人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

IPC分类号： H01L31/113

CPC分类号： H01L27/14634 ,  H01L27/14609 ,  H01L27/1463

摘要： A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.

摘要翻译： 固态摄像装置包括：半导体衬底，包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区，包括多个光电转换器，其中多个 光电转换器包括第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上，第一外围电路区域包括第一P型半导体 层，形成在第一N型半导体层上。 固体摄像装置还包括第二外围电路区域，其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

公开(公告)号：US07042061B2

公开(公告)日：2006-05-09

申请号：US10727515

申请日：2003-12-05

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H01L31/06 ,  H01L27/148

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极 形成晶体管。 由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

公开(公告)号：US06978434B1

公开(公告)日：2005-12-20

申请号：US09602253

申请日：2000-06-23

申请人： Naoyuki Shigyo ,  Tetsuya Yamaguchi

发明人： Naoyuki Shigyo ,  Tetsuya Yamaguchi

IPC分类号： H01L21/3205 ,  G06F17/50 ,  H01L21/82 ,  H01L23/522 ,  H01L29/06 ,  H03K19/003

CPC分类号： H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wiring structure of a semiconductor device, includes a wiring layer formed on an insulating film, a width (W) of each wire in the wiring layer and a thickness (H) of the insulating film satisfying “W/H

摘要翻译： 半导体器件的布线结构包括形成在绝缘膜上的布线层，布线层中的布线的宽度（W）和绝缘膜的厚度（H）满足“W / H <1”的长度 布线层中的各布线的长度（L）等于或大于1mm。

公开(公告)号：US06728937B2

公开(公告)日：2004-04-27

申请号：US09750727

申请日：2000-12-28

申请人： Naoki Wakita ,  Tetsuya Yamaguchi

发明人： Naoki Wakita ,  Tetsuya Yamaguchi

IPC分类号： G06F1750

CPC分类号： H01L22/20

摘要： In the disclosed invention, the influence of the dispersions of the gate lengths and the gate widths is prevented from adversely affecting circuit parameters except for the specific circuit parameter. According to this invention, the circuit parameters can be correctly extracted, and circuit characteristics can be accurately predicted.

摘要翻译： 在所公开的发明中，防止栅极长度和栅极宽度的分散的影响不利于电路参数的不利影响，特定电路参数除外。 根据本发明，可以正确地提取电路参数，并且可以准确地预测电路特性。

公开(公告)号：US06690423B1

公开(公告)日：2004-02-10

申请号：US09272337

申请日：1999-03-19

申请人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

发明人： Nobuo Nakamura ,  Hisanori Ihara ,  Ikuko Inoue ,  Hidenori Shibata ,  Akiko Nomachi ,  Yoshiyuki Shioyama ,  Hidetoshi Nozaki ,  Masako Hori ,  Akira Makabe ,  Hiroshi Naruse ,  Hideki Inokuma ,  Seigo Abe ,  Hirofumi Yamashita ,  Tetsuya Yamaguchi

IPC分类号： H04N314

CPC分类号： H01L27/14621 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/035236 ,  Y10S257/927

摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

摘要翻译： 本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和 所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。 根据本发明的固态摄像装置包括具有表面的p型硅衬底，在其上形成用于构成光电转换区域的p +扩散层和读取MOS场效应晶体管的漏极。 由p +扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在p +扩散层和漏极之间。 与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p +扩散层的读取栅电极的末端延伸到栅电极下方的位置。