MONOENERGETIC ION GENERATION FOR CONTROLLED ETCH

    公开(公告)号:US20200020510A1

    公开(公告)日:2020-01-16

    申请号:US16035423

    申请日:2018-07-13

    Abstract: Systems and methods for generating monoenergetic ions are described. A duty cycle of a high parameter level of a multistate parameter signal is maintained and a difference between the high parameter level and a low parameter level of the multistate parameter signal is maintained to generate monoenergetic ions. The monoenergetic ions are used to etch a top material layer of a substrate at a rate that is self-limiting without substantially etching a bottom material layer of the substrate.

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