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公开(公告)号：US20250079121A1
公开(公告)日：2025-03-06
申请号：US18948444
申请日：2024-11-14
Applicant: Lam Research Corporation
Inventor： Maolin Long , Yuhou Wang , Alexander Miller Paterson
IPC: H01J37/32
Abstract: A direct drive system for providing RF power to a substrate processing system includes a direct drive enclosure including a first direct drive circuit located in the direct drive enclosure and operating at a first frequency and a first connector connected to the first direct drive circuit. A junction box is arranged adjacent to the direct drive enclosure and includes a first capacitive circuit connected to the first direct drive circuit; a second connector located on one side of the junction box, connected to one terminal of the first capacitive circuit and mating with the first connector of the direct drive enclosure; third and fourth connectors connected to another terminal of the first capacitive circuit; and a coil enclosure arranged adjacent to the junction box and including first and second coils and fifth and sixth connectors mating with the third and fourth connectors of the junction box.
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公开(公告)号：US20240396372A1
公开(公告)日：2024-11-28
申请号：US18689007
申请日：2022-09-13
Applicant: Lam Research Corporation
Inventor： Alexander Miller Paterson , Michael John Martin , Yuhou Wang , John Drewery , Neema Rastgar
Abstract: A junction system for a direct-drive radiofrequency power supply includes a first terminal connected to a radiofrequency signal supply pin that is connected to an output of a direct-drive radiofrequency signal generator. The junction system also includes a second terminal connected to a coil of a plasma processing chamber. The junction system includes a reactive circuit connected between the first terminal and the second terminal. The reactive circuit is configured to transform a shaped-amplified square waveform signal into a shaped-sinusoidal signal in route from the first terminal to the second terminal. The reactive circuit includes a variable capacitor having a capacitance set so that a peak amount of radiofrequency power is transmitted from the direct-drive radiofrequency signal generator through the reactive circuit to the coil.
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公开(公告)号：US11728137B2
公开(公告)日：2023-08-15
申请号：US17267920
申请日：2019-08-08
Applicant: LAM RESEARCH CORPORATION
Inventor： Yuhou Wang , Maolin Long , Ying Wu , Alexander Miller Paterson
IPC: H01J37/32
CPC classification number: H01J37/32165 , H01J37/32183 , H01J2237/24564 , H01J2237/24585
Abstract: A drive circuit for providing RF power to a component of a substrate processing system includes a plasma source operating at a first frequency. A load includes the component of the substrate processing system. An impedance network connects the plasma source to the load. A current sensor senses current at an output of the plasma source. A voltage sensor senses voltage at the output of the plasma source. A controller includes a tuned frequency calculator configured to calculate a tuned frequency for the plasma source based on the voltage, the current, and a configuration of the impedance network and to adjust the first frequency based on the tuned frequency.
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公开(公告)号：US20200286713A1
公开(公告)日：2020-09-10
申请号：US16885083
申请日：2020-05-27
Applicant: Lam Research Corporation
Inventor： Maolin Long , Yuhou Wang , Ying Wu , Alex Paterson
IPC: H01J37/32
Abstract: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.
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公开(公告)号：US11716805B2
公开(公告)日：2023-08-01
申请号：US17558332
申请日：2021-12-21
Applicant: Lam Research Corporation
Inventor： Maolin Long , Yuhou Wang , Ricky Marsh , Alex Paterson
CPC classification number: H05H1/46 , H01J37/32174 , H01J37/32183 , H03F3/2173 , H05H1/466 , H05H1/4652 , H05H2242/10 , H05H2242/24
Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
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Patent Agency Ranking
公开(公告)号：US20220126454A1
公开(公告)日：2022-04-28
申请号：US17427522
申请日：2020-02-06
Applicant: Lam Research Corporation
Inventor： Michael John Martin , Yuhou Wang , Alexander Miller Paterson
Abstract: Systems and methods are provided for positioning a wafer in relation to a datum structure. In one example, a system comprises a camera arrangement including at least two cameras, each of the at least two cameras including a field of view when positioned in the camera arrangement, each field of view including a peripheral edge of the wafer and a peripheral edge of the datum structure. A processor receives positional data from each of the at least two cameras and determines, in relation to each field of view, a gap size between the respective peripheral edges of the wafer and the datum location included in the respective field of view. A controller adjusts a position of the wafer relative to the datum structure based on the determined respective gap sizes.
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公开(公告)号：US20200335305A1
公开(公告)日：2020-10-22
申请号：US16888613
申请日：2018-11-28
Applicant: Lam Research Corporation
Inventor： Maolin Long , Yuhou Wang , Ying Wu , Alex Paterson
Abstract: A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.
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公开(公告)号：US20200253034A1
公开(公告)日：2020-08-06
申请号：US16853516
申请日：2020-04-20
Applicant: Lam Research Corporation
Inventor： Maolin Long , Yuhou Wang , Ricky Marsh , Alex Paterson
Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
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公开(公告)号：US10264663B1
公开(公告)日：2019-04-16
申请号：US15787660
申请日：2017-10-18
Applicant: Lam Research Corporation
Inventor： Maolin Long , Yuhou Wang , Ricky Marsh , Alex Paterson
Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
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公开(公告)号：US12193138B2
公开(公告)日：2025-01-07
申请号：US18340437
申请日：2023-06-23
Applicant: Lam Research Corporation
Inventor： Maolin Long , Yuhou Wang , Ricky Marsh , Alex Paterson
Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
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