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    SYNCHRONIZATION OF RF GENERATORS
    2.
    发明公开
    SYNCHRONIZATION OF RF GENERATORS 审中-公开

    公开(公告)号：US20240331976A1

    公开(公告)日：2024-10-03

    申请号：US18740449

    申请日：2024-06-11

    Applicant: Lam Research Corporation

    Inventor： Ying Wu ,  John Stephen Drewery ,  Alexander Miller Paterson ,  Xiang Zhou ,  Zhuoxian Wang ,  Yoshie Kimura

    IPC: H01J37/32

    CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/334

    Abstract: Systems and methods for synchronization of radio frequency (RF) generators are described. One of the methods includes receiving, by a first RF generator, a first recipe set, which includes information regarding a first plurality of pulse blocks for operating the first RF generator. The method further includes receiving, by a second RF generator, a second recipe set, which includes information regarding a second plurality of pulse blocks for operating a second RF generator. Upon receiving a digital pulsed signal, the method includes executing the first recipe set and executing the second recipe set. The method further includes outputting a first one of the pulse blocks of the first plurality based on the first recipe set in synchronization with a synchronization signal. The method includes outputting a first one of the pulse blocks of the second plurality based on the second recipe set in synchronization with the synchronization signal.

    ETCHING ISOLATION FEATURES AND DENSE FEATURES WITHIN A SUBSTRATE
    3.
    发明申请
    ETCHING ISOLATION FEATURES AND DENSE FEATURES WITHIN A SUBSTRATE 有权

    公开(公告)号：US20210358757A1

    公开(公告)日：2021-11-18

    申请号：US17298931

    申请日：2019-11-22

    Applicant: Lam Research Corporation

    Inventor： Juline Shoeb ,  Alexander Miller Paterson ,  Ying Wu

    IPC: H01L21/3065 ,  H01J37/32 ,  H01J37/305

    Abstract: Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.

    AUXILIARY CIRCUIT IN RF MATCHING NETWORK FOR FREQUENCY TUNING ASSISTED DUAL-LEVEL PULSING
    4.
    发明申请
    AUXILIARY CIRCUIT IN RF MATCHING NETWORK FOR FREQUENCY TUNING ASSISTED DUAL-LEVEL PULSING 审中-公开

    公开(公告)号：US20180294566A1

    公开(公告)日：2018-10-11

    申请号：US15942629

    申请日：2018-04-02

    Applicant: Lam Research Corporation

    Inventor： Yuhou Wang ,  Arthur H. Sato ,  Ying Wu ,  Alexander Miller Paterson

    IPC: H01Q5/335

    Abstract: A radio frequency (RF) matching circuit control system includes an RF matching circuit including a plurality of tunable components. The RF matching circuit is configured to receive an input signal including at least two pulsing levels from an RF generator, provide an output signal to a load based on the input signal, and match an impedance associated with the input signal to impedances of the load. A controller is configured to determine respective impedances of the load for the at least two pulsing levels of the input signal and adjust operating parameters of the plurality of tunable components to align a frequency tuning range of the RF matching circuit with the respective impedances of the load for the at least two pulsing levels to match the impedance associated with the input signal to the respective impedances.

    DUAL-FREQUENCY, DIRECT-DRIVE INDUCTIVELY COUPLED PLASMA SOURCE
    5.
    发明申请
    DUAL-FREQUENCY, DIRECT-DRIVE INDUCTIVELY COUPLED PLASMA SOURCE 有权

    公开(公告)号：US20250079121A1

    公开(公告)日：2025-03-06

    申请号：US18948444

    申请日：2024-11-14

    Applicant: Lam Research Corporation

    Inventor： Maolin Long ,  Yuhou Wang ,  Alexander Miller Paterson

    IPC: H01J37/32

    Abstract: A direct drive system for providing RF power to a substrate processing system includes a direct drive enclosure including a first direct drive circuit located in the direct drive enclosure and operating at a first frequency and a first connector connected to the first direct drive circuit. A junction box is arranged adjacent to the direct drive enclosure and includes a first capacitive circuit connected to the first direct drive circuit; a second connector located on one side of the junction box, connected to one terminal of the first capacitive circuit and mating with the first connector of the direct drive enclosure; third and fourth connectors connected to another terminal of the first capacitive circuit; and a coil enclosure arranged adjacent to the junction box and including first and second coils and fifth and sixth connectors mating with the third and fourth connectors of the junction box.

    Junction System for Direct-Drive Radiofrequency Power Supply
    6.
    发明申请
    Junction System for Direct-Drive Radiofrequency Power Supply 有权

    公开(公告)号：US20240396372A1

    公开(公告)日：2024-11-28

    申请号：US18689007

    申请日：2022-09-13

    Applicant: Lam Research Corporation

    Inventor： Alexander Miller Paterson ,  Michael John Martin ,  Yuhou Wang ,  John Drewery ,  Neema Rastgar

    IPC: H02J50/10 ,  H01J37/32 ,  H02J50/20

    Abstract: A junction system for a direct-drive radiofrequency power supply includes a first terminal connected to a radiofrequency signal supply pin that is connected to an output of a direct-drive radiofrequency signal generator. The junction system also includes a second terminal connected to a coil of a plasma processing chamber. The junction system includes a reactive circuit connected between the first terminal and the second terminal. The reactive circuit is configured to transform a shaped-amplified square waveform signal into a shaped-sinusoidal signal in route from the first terminal to the second terminal. The reactive circuit includes a variable capacitor having a capacitance set so that a peak amount of radiofrequency power is transmitted from the direct-drive radiofrequency signal generator through the reactive circuit to the coil.

    EDGE RING CENTERING METHOD USING RING DYNAMIC ALIGNMENT DATA
    9.
    发明申请
    EDGE RING CENTERING METHOD USING RING DYNAMIC ALIGNMENT DATA 审中-公开

    公开(公告)号：US20180138069A1

    公开(公告)日：2018-05-17

    申请号：US15799011

    申请日：2017-10-31

    Applicant: Lam Research Corporation

    Inventor： Ali Sucipto Tan ,  Haoquan Yan ,  Marc Estoque ,  Damon Tyrone Genetti ,  Jon McChesney ,  Alexander Miller Paterson

    IPC: H01L21/68 ,  H01L21/687

    Abstract: A system for determining an alignment of an edge ring on a substrate support includes a robot control module configured to control a robot to place the edge ring onto the substrate support and retrieve the edge ring from the substrate support. An alignment module is configured to determine a plurality of first positions of the edge ring on the robot prior to being placed onto the substrate support and determine a plurality of second positions of the edge ring on the robot subsequent to being retrieved from the substrate support. An edge ring position module configured to determine a centered position of the edge ring relative to the substrate support based on offsets between the plurality of first positions and the plurality of second positions.

    Etching isolation features and dense features within a substrate
    10.
    发明授权
    Etching isolation features and dense features within a substrate 有权

    公开(公告)号：US12119232B2

    公开(公告)日：2024-10-15

    申请号：US17847971

    申请日：2022-06-23

    Applicant: Lam Research Corporation

    Inventor： Juline Shoeb ,  Alexander Miller Paterson ,  Ying Wu

    IPC: H01L21/306 ,  H01J37/305 ,  H01J37/32 ,  H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J37/3053 ,  H01J37/321

    Abstract: Systems and methods for etching different features in a substantially equal manner are described. One of the methods includes applying a low frequency bias signal during a low TCP state and applying a high frequency bias signal during a high TCP state. The application of the low frequency bias signal during the low TCP state facilitates generation of hot neutrals, which are used to increase an etch rate of etching dense features compared to an etch rate for etching isolation features. The application of the high frequency bias signal during the high TCP state facilitates generation of ions to increase an etch rate of etching the isolation features compared to an etch rate of etching the dense features. After applying the low frequency bias signal during the low TCP state and the high frequency bias signal during the high TCP state, the isolation and dense features are etched similarly.

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