公开(公告)号：USH1443H

公开(公告)日：1995-06-06

申请号：US822453

申请日：1992-01-17

Applicant: Anderson H. Kim ,  Maurice Weiner ,  Louis J. Jasper, Jr. ,  Thomas E. Koscica ,  Robert J. Youmans

Inventor： Anderson H. Kim ,  Maurice Weiner ,  Louis J. Jasper, Jr. ,  Thomas E. Koscica ,  Robert J. Youmans

IPC: H01Q3/26 ,  F21V1/00 ,  H01Q11/10

CPC classification number: H01Q3/2676

Abstract: A device for radiating pulses of radio frequency energy in response to pulses of laser light in which a metal layer is ohmically bonded to one side of a substrate of semiconductor material and an antenna is ohmically bonded to the other side of the substrate, there being at least one aperture in the metal layer for permitting laser light to reach the disk.

公开(公告)号：US5280168A

公开(公告)日：1994-01-18

申请号：US797593

申请日：1991-11-25

Applicant: Anderson H. Kim ,  Maurice Weiner ,  Louis J. Jasper, Jr. ,  Robert J. Youmans

Inventor： Anderson H. Kim ,  Maurice Weiner ,  Louis J. Jasper, Jr. ,  Robert J. Youmans

IPC: H03K3/57 ,  H03K17/78 ,  H01J40/14

CPC classification number: H03K17/78 ,  H03K3/57

Abstract: The combination of a photoconductive switch coupled to an energy storage ice wherein the switch is comprised of photoconductive semiconductor switch while the energy storage device comprises a tapered radio transmission line. A photoconductive semiconductor gallium arsenide switch is embedded in a circular disc of dielectric material having a thickness dimension which reduces linearly outward from the center, with upper and lower layers of continuous radial metallization configured in a circular pattern located thereon. The upper layer of metallization includes an apertured grid adjacent one surface of the switch, while the outer conductor of a coaxial output signal line is connected to the metallization layer on the opposite side with the inner conductor thereof passing through the dielectric layer to the undersurface of the semiconductor switch.

Abstract translation: 耦合到能量存储装置的光电开关的组合，其中开关由光电导半导体开关构成，而能量存储装置包括锥形无线电传输线。 光电导半导体砷化镓开关嵌入电介质材料的圆盘中，其具有从中心线性向外减小的厚度尺寸，其中连续径向金属化的上层和下层构造成位于其上的圆形图案。 金属化的上层包括邻近开关的一个表面的有孔网格，而同轴输出信号线的外部导体与其内部导体的相对侧的金属化层连接到穿过电介质层的下表面 半导体开关。

公开(公告)号：US5262657A

公开(公告)日：1993-11-16

申请号：US825365

申请日：1992-01-24

Applicant: Anderson H. Kim ,  Robert J. Youmans ,  Maurice Weiner ,  Robert J. Zeto ,  Louis J. Jasper, Jr.

Inventor： Anderson H. Kim ,  Robert J. Youmans ,  Maurice Weiner ,  Robert J. Zeto ,  Louis J. Jasper, Jr.

IPC: G02B6/42 ,  H01L31/08 ,  H01L33/00 ,  H01J40/14

CPC classification number: G02B6/4295 ,  H01L31/08

Abstract: A device for generating pulses of radio frequency energy in response to pulses of laser light in which a circular wafer of GaAs has metallized annular layers ohmically bonded to the wafer by epitaxial GaAs layers, and an epitaxial layer of AlGaAs in the center of one of the annular epitaxial layers through which laser light is to be directed, there being a plurality of apertures in the metallized layer in contact with the AlGaAs epitaxial layer. In addition, an AlGaAs epitaxial layer may be formed opposite the first AlGaAs layer and an optical fiber is brought into contact with it so that laser light can be introduced at both sides of the wafer.

Abstract translation: 一种用于响应于激光脉冲产生射频能量脉冲的装置，其中GaAs的圆形晶片通过外延GaAs层金属化地与晶片方向结合的环形层，以及AlGaAs的外延层在其中一个的中心 激光将要被引导的环形外延层，在与AlGaAs外延层接触的金属化层中存在多个孔。 此外，AlGaAs外延层可以形成为与第一AlGaAs层相对，并且使光纤与其接触，使得可以在晶片的两侧引入激光。

公开(公告)号：US5227621A

公开(公告)日：1993-07-13

申请号：US946718

申请日：1992-09-18

Applicant: Anderson H. Kim ,  Leo D. Didomenico ,  Maurice Weiner ,  Louis J. Jasper, Jr. ,  Robert J. Youmans ,  Thomas E. Koscica

Inventor： Anderson H. Kim ,  Leo D. Didomenico ,  Maurice Weiner ,  Louis J. Jasper, Jr. ,  Robert J. Youmans ,  Thomas E. Koscica

IPC: G01S7/282 ,  G01S13/02 ,  H03K3/57

CPC classification number: H03K3/57 ,  G01S13/0209 ,  G01S7/282

Abstract: A photoconductive switch coupled to an energy storage device wherein the tch is comprised of photoconductive semiconductor material while the energy storage device comprises two quasi-radial transmission line including a different material, i.e. a dielectric storage medium. The photoconductive semiconductor gallium arsenide switch is electrically connected to two quasi-radial transmission lines formed in part by layers of metallization configured in a quasi-radially shaped pattern upon the energy storage device. A variation comprises a photoconductive semiconductor gallium arsenide wafer sandwiched between two quasi-radial transmission lines so that the semiconductor gallium arsenide wafer serves as substrate, energy storage medium, and photoconductive switch.

Abstract translation: 耦合到能量存储装置的光电导开关，其中开关由光导半导体材料组成，而能量存储装置包括包括不同材料即电介质存储介质的两个准径向传输线。 光电导半导体砷化镓开关电连接到在能量存储装置上以准径向成形图案构成的部分金属化层形成的两个准径向传输线。 变型包括夹在两个准径向传输线之间的光导半导体砷化镓晶片，使得半导体砷化镓晶片用作衬底，能量存储介质和光电导开关。

公开(公告)号：US5148251A

公开(公告)日：1992-09-15

申请号：US797592

申请日：1991-11-25

Applicant: Anderson H. Kim ,  Maurice Weiner ,  Louis J. Jasper, Jr. ,  Robert J. Youmans

Inventor： Anderson H. Kim ,  Maurice Weiner ,  Louis J. Jasper, Jr. ,  Robert J. Youmans

IPC: H01L31/101 ,  H01L31/105 ,  H01L31/107 ,  H03K17/78

CPC classification number: H01L31/107 ,  H01L31/101 ,  H01L31/105 ,  H03K17/78

Abstract: An optically activated avalanche GaAs switch having two opposing optical windows for receiving optical energy from an illumination source which may be, for example, a laser diode operating at a 1.06 micron wavelength. The switch is a semiconductor PIN structure including a substrate of intrinsic GaAs material within which is formed opposing highly doped deep recessed p+ and n+GaAs layers underlying a pair of ohmic contacts including outer annular layers of metallization which surround respective centrally located optical windows formed of AlGaAs. By illuminating the switch from opposite sides through the optical windows, electron-hole pairs are generated and a condition for an avalanche mode of operation is created in the center region of the device rendering it conductive.

Abstract translation: 一种光学活化的雪崩GaAs开关，具有两个相对的光学窗口，用于从照明源接收光能，所述照明源可以是例如以1.06微米波长工作的激光二极管。 该开关是包括本征GaAs材料的衬底的半导体PIN结构，其内部形成有相对于一对欧姆接触器下方的高掺杂深凹陷p +和n + GaAs层，其包括外部环形金属化层，该外部环形金属层环绕相应的位于中心的光学窗口， AlGaAs。 通过从相对侧通过光学窗口照明开关，产生电子 - 空穴对，并且在器件的中心区域中产生雪崩模式操作的条件使其导电。

公开(公告)号：US5005462A

公开(公告)日：1991-04-09

申请号：US466142

申请日：1990-01-16

Applicant: Louis J. Jasper, Jr. ,  Maurice Weiner ,  Lawrence J. Bovino

Inventor： Louis J. Jasper, Jr. ,  Maurice Weiner ,  Lawrence J. Bovino

IPC: F41B6/00

CPC classification number: F41B6/006

Abstract: An electromagnetic launcher or railgun includes a projectile or armature which is comprised of an optically activated semiconductor switch device including a body of bulk semiconductor material, such as gallium arsenide (GaAs) or gallium arsenide doped with chromium (Cr: GaAs), located between a pair of rails across which is connected a relatively high current source. A source of optical energy, such as a pulsed laser, directs optical energy to at least one surface of the semiconductor switch device where the conductivity of the semiconductor body is thereby increased and current from the source is transferred between the rails through the semiconductor body, causing an electromagnetic Lorentz type drive force to be built up behind the armature, which is set into motion and rapidly accelerated along the rails.

Abstract translation: 电磁发射器或轨道枪包括射弹或电枢，其包括光学活化的半导体开关器件，其包括本体半导体材料体，例如砷化镓（GaAs）或掺杂有铬（Cr：GaAs）的砷化镓，位于 一对导轨连接有相对较高的电流源。 诸如脉冲激光器的光能源将光能引导到半导体开关器件的至少一个表面，其中半导体本体的导电性由此增加，并且来自源极的电流通过半导体主体在轨道之间传递， 导致在电枢后面建立电磁洛伦兹型驱动力，电枢被设置成运动并沿着轨道快速加速。

公开(公告)号：US4840106A

公开(公告)日：1989-06-20

申请号：US141365

申请日：1987-12-28

Applicant: Louis J. Jasper, Jr.

Inventor： Louis J. Jasper, Jr.

IPC: F41B6/00

CPC classification number: F41B6/006

Abstract: An electromagnetic railgun. The device features two electrically connected parallel rails. One end of each rail may be connected to a D.C. voltage source. At least one of the rails has a hole for closely receiving a metallic projectile. When the projectile is within the hole and the voltage is applied, currents flow through the two rails. Interaction of the currents with the self generated magnetic field causes a repulsive force between the two rails and launches the projectile outward from the rails.

公开(公告)号：US4813332A

公开(公告)日：1989-03-21

申请号：US68389

申请日：1987-06-12

Applicant: Louis J. Jasper, Jr.

Inventor： Louis J. Jasper, Jr.

IPC: F41B6/00 ,  H01L39/14 ,  F41F1/02

CPC classification number: F41B6/006 ,  Y10S505/885

Abstract: A railgun with superconducting rails. The device features rails made from ceramic materials capable of becoming superconducting at relatively high temperatures. Some embodiments utilize rails made entirely from superconducting ceramics while other embodiments utilize rails with metallic cores covered by layers of superconducting ceramics. Cooling of the superconducting ceramic to a temperature below its critical temperature is accomplished by liquid nitrogen cryorefrigerator or a compressed gas cryorefrigerator.

公开(公告)号：US4389593A

公开(公告)日：1983-06-21

申请号：US255121

申请日：1981-04-17

Applicant: Charles M. DeSantis ,  Louis J. Jasper, Jr.

Inventor： Charles M. DeSantis ,  Louis J. Jasper, Jr.

IPC: H01J25/00

CPC classification number: H01J25/00

Abstract: A circuitless particle beam device for relatively high frequency amplifierr oscillator applications that eliminates the requirement for an internal RF slow wave structure. A circularly polarized RF energy wave propagates on a relatively high density particle beam within an oversized waveguide and interacts with the beam which exhibits a relatively high dielectric constant. The high density beam acts as an active dielectric waveguide serving the dual purpose of a slow wave circuit and amplification source, and accordingly guides and amplifies the RF energy when a condition of beam and wave synchronism is met.

Abstract translation: 用于相对高频放大器或振荡器应用的无电路粒子束装置，消除了对内部RF慢波结构的要求。 圆极化RF能量波在超大波导内的相对高密度的粒子束上传播，并且与表现出较高介电常数的光束相互作用。 高密度光束用作用于慢波电路和放大源的双重目的的有源电介质波导，因此当满足波束和波同步的条件时，引导和放大RF能量。