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9 条记录 (耗时 0.011 秒)

    Fabrication technique for silicon microclusters using pulsed electrical power
    2.
    发明授权
    Fabrication technique for silicon microclusters using pulsed electrical power 失效
    使用脉冲电力的硅微团簇的制造技术

    公开(公告)号：US5256339A

    公开(公告)日：1993-10-26

    申请号：US968882

    申请日：1992-10-30

    申请人： Clarence G. Thornton ,  James F. Harvey ,  Robert A. Lux ,  Robert J. Zeto ,  Hardev Singh ,  Maurice Weiner ,  Terence Burke ,  Lawrence E. Kingsley

    发明人： Clarence G. Thornton ,  James F. Harvey ,  Robert A. Lux ,  Robert J. Zeto ,  Hardev Singh ,  Maurice Weiner ,  Terence Burke ,  Lawrence E. Kingsley

    IPC分类号： C23C14/32 ,  B29C9/00

    CPC分类号： C23C14/32

    摘要： The present invention describes a method of explosively vaporizing a piecef semiconductor material in a plasma formed by a fast, high voltage current pulse. The semiconductor material may be formed from crystalline, polycrystalline, or amorphous forms of semiconductor material. After the semiconductor material is vaporized, it coalesces as the plasma begins to cool and is deposited in a collection system. The size and composition of the microparticles formed by this process can be controlled by conditioning the plasma in predetermined manners. In particular, impurities can be introduced either in the target material, in gas introduced in the plasma, or in the gas through which the coalescing microparticles travel prior to deposition.

    摘要翻译： 本发明描述了一种通过快速，高电压电流脉冲形成的等离子体中的一块半导体材料爆炸性汽化的方法。 半导体材料可以由半导体材料的晶体，多晶或非晶形式形成。 在半导体材料蒸发之后，当等离子体开始冷却并沉积在收集系统中时，它聚结。 通过该方法形成的微粒的尺寸和组成可以通过以预定方式调节等离子体来控制。 特别地，杂质可以在目标材料，引入等离子体的气体中，或在沉积之前的聚结微粒行进的气体中引入。

    Dual chambered high pressure furnace
    5.
    发明授权
    Dual chambered high pressure furnace 失效
    双室高压炉

    公开(公告)号：US4375027A

    公开(公告)日：1983-02-22

    申请号：US155334

    申请日：1980-06-02

    申请人： Robert J. Zeto ,  Franz X. Zimmerman

    发明人： Robert J. Zeto ,  Franz X. Zimmerman

    IPC分类号： B01J3/04

    CPC分类号： B01J3/04

    摘要： The high pressure furnace comprises a cylindrical pressure vessel with fr and rear pressure closures. An electrical heating element is supported within the interior of the pressure furnace. The front closure supports a relatively thin-walled inner container opening only to an aperture in the front closure. A small closure plugs the aperture. A reaction frame secures the various closures. Blanket gases are introduced into the furnace chamber and process gases into the process chamber defined by the interior of the inner container. Means are provided for minimizing the pressure difference across the inner container to enable it to maintain its original shape.

    摘要翻译： 高压炉包括具有前后压力封闭件的圆柱形压力容器。 电加热元件支撑在压力炉的内部。 前封闭件支撑相对薄壁的内部容器，仅在前盖中的开口处开口。 一个小封口插入孔。 反应框架固定各种封闭件。 毯子气体被引入炉室并将气体加工到由内部容器的内部限定的处理室中。 提供了用于最小化跨过内部容器的压力差以使其能够保持其原始形状的装置。

    Optically activated wafer-scale pulser with AlGaAs epitaxial layer
    6.
    发明授权
    Optically activated wafer-scale pulser with AlGaAs epitaxial layer 失效
    具有AlGaAs外延层的光学激活晶片级脉冲发生器

    公开(公告)号：US5262657A

    公开(公告)日：1993-11-16

    申请号：US825365

    申请日：1992-01-24

    申请人： Anderson H. Kim ,  Robert J. Youmans ,  Maurice Weiner ,  Robert J. Zeto ,  Louis J. Jasper, Jr.

    发明人： Anderson H. Kim ,  Robert J. Youmans ,  Maurice Weiner ,  Robert J. Zeto ,  Louis J. Jasper, Jr.

    IPC分类号： G02B6/42 ,  H01L31/08 ,  H01L33/00 ,  H01J40/14

    CPC分类号： G02B6/4295 ,  H01L31/08

    摘要： A device for generating pulses of radio frequency energy in response to pulses of laser light in which a circular wafer of GaAs has metallized annular layers ohmically bonded to the wafer by epitaxial GaAs layers, and an epitaxial layer of AlGaAs in the center of one of the annular epitaxial layers through which laser light is to be directed, there being a plurality of apertures in the metallized layer in contact with the AlGaAs epitaxial layer. In addition, an AlGaAs epitaxial layer may be formed opposite the first AlGaAs layer and an optical fiber is brought into contact with it so that laser light can be introduced at both sides of the wafer.

    摘要翻译： 一种用于响应于激光脉冲产生射频能量脉冲的装置，其中GaAs的圆形晶片通过外延GaAs层金属化地与晶片方向结合的环形层，以及AlGaAs的外延层在其中一个的中心 激光将要被引导的环形外延层，在与AlGaAs外延层接触的金属化层中存在多个孔。 此外，AlGaAs外延层可以形成为与第一AlGaAs层相对，并且使光纤与其接触，使得可以在晶片的两侧引入激光。

    Ligh activated high power integrated pulser
    7.
    发明授权
    Ligh activated high power integrated pulser 失效
    Ligh激活的高功率集成脉冲发生器

    公开(公告)号：US5146075A

    公开(公告)日：1992-09-08

    申请号：US681253

    申请日：1991-04-08

    申请人： Anderson H. Kim ,  Maurice Weiner ,  Stephen Levy ,  Robert J. Zeto

    发明人： Anderson H. Kim ,  Maurice Weiner ,  Stephen Levy ,  Robert J. Zeto

    IPC分类号： G02B6/42 ,  H01L31/105 ,  H03K3/57 ,  H03K17/78

    CPC分类号： H03K3/57 ,  G02B6/4295 ,  H01L31/105 ,  H03K17/78

    摘要： A high power pulse generating system for use in impulse radar systems and e like contains a plurality of pulser units. The pulser units are circular shaped PIN diodes which integrates a light activated switch and a storage capacitor into a single structure formed on a semiconducting wafer. The pulser units have the capability of outputting pulses having a width of less than one nanosecond, facilitating high power output. The outputs of the pulser units are combined when each of the pulser units is simultaneously discharged using multiple laser pulses. In another embodiment a voltage step-up transformer is formed by a PIN diode structure having a diameter of approximately 60 mm. This device has the capability of outputting voltage amplitudes equal to or greater than the voltage level used to charge the PIN diode.

    摘要翻译： 用于脉冲雷达系统等的高功率脉冲发生系统包含多个脉冲发生器单元。 脉冲发生器单元是圆形PIN二极管，其将光激活开关和存储电容器集成到形成在半导体晶片上的单个结构中。 脉冲发生器单元具有输出宽度小于一纳秒的脉冲的能力，有利于高功率输出。 当每个脉冲发生器单元使用多个激光脉冲同时放电时，组合脉冲发生器单元的输出。 在另一个实施例中，电压升压变压器由直径约为60mm的PIN二极管结构形成。 该器件具有输出等于或大于用于对PIN二极管充电的电压电平的电压幅度的能力。

    Optically activated sub-nanosecond hybrid pulser
    8.
    发明授权
    Optically activated sub-nanosecond hybrid pulser 失效
    光学激活的亚纳秒级混合脉冲发生器

    公开(公告)号：US5155352A

    公开(公告)日：1992-10-13

    申请号：US797595

    申请日：1991-11-25

    申请人： Anderson H. Kim ,  Maurice Weiner ,  Robert J. Youmans ,  Robert J. Zeto ,  Louis J. Jasper, Jr.

    发明人： Anderson H. Kim ,  Maurice Weiner ,  Robert J. Youmans ,  Robert J. Zeto ,  Louis J. Jasper, Jr.

    IPC分类号： H01T2/00 ,  H02M9/00

    CPC分类号： H01T2/00

    摘要： The combination of a photoconductive switch coupled to an energy storage ice wherein the switch is comprised of photoconductive semiconductor material while the energy storage device comprises a radio transmission line including a different material, i.e. a dielectric storage medium. A photoconductive semiconductor gallium arsenide switch is embedded in a circular disc of dielectric material with upper and lower layers of continuous radial metallization configured in a circular pattern located thereon. The upper layer of metallization includes an apertured grid adjacent one surface of the switch, while the outer conductor of a coaxial output signal line is connected to the metallization layer on the opposite side with the inner conductor thereof passing through the dielectric layer to the undersurface of the semiconductor switch. A variation comprises the upper and lower metallization layers being formed in the shape of a plurality of discrete straight line segments or strips which extend radially outward from the center and thus forms a quasi-radial structure.

    摘要翻译： 耦合到能量存储装置的光电导开关的组合，其中开关由光电导半导体材料组成，而能量存储装置包括包括不同材料的无线电传输线，即电介质存储介质。 光电导半导体砷化镓开关嵌入在电介质材料的圆盘中，其中连续径向金属化的上层和下层构造成位于其上的圆形图案。 金属化的上层包括邻近开关的一个表面的有孔网格，而同轴输出信号线的外部导体与其内部导体的相对侧的金属化层连接到穿过电介质层的下表面 半导体开关。 一种变型包括上部和下部金属化层形成为从中心径向向外延伸并由此形成准径向结构的多个离散的直线段或条带的形状。