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公开(公告)号：US11581483B2
公开(公告)日：2023-02-14
申请号：US17249839
申请日：2021-03-16
Applicant: MICROJET TECHNOLOGY CO., LTD.
Inventor： Hao-Jan Mou , Hsien-Chung Tai , Lin-Huei Fang , Yung-Lung Han , Chi-Feng Huang , Chin-Wen Hsieh , Tsung-I Lin
IPC: H01L41/23 , H01L41/314 , B81C1/00 , H01L41/09 , F16K99/00 , B81B3/00 , F04B43/04 , H01L41/332
Abstract: A manufacturing method of micro fluid actuator includes: providing a substrate; depositing a first protection layer on a first surface of the substrate; depositing an actuation region on the first protection layer; applying lithography dry etching to a portion of the first protection layer to produce at least one first protection layer flow channel; applying wet etching to a portion of a main structure of the substrate to produce a chamber body and a first polycrystalline silicon flow channel region, while a region of an oxidation layer middle section of the main structure is not etched; applying reactive-ion etching to a portion of a second surface of the substrate to produce at least one substrate silicon flow channel; and applying dry etching to a portion of a silicon dioxide layer to produce at least one silicon dioxide flow channel.
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公开(公告)号：US11478794B2
公开(公告)日：2022-10-25
申请号：US16660890
申请日：2019-10-23
Applicant: Microjet Technology Co., Ltd.
Inventor： Hao-Jan Mou , Rong-Ho Yu , Cheng-Ming Chang , Hsien-Chung Tai , Wen-Hsiung Liao , Chi-Feng Huang , Yung-Lung Han , Chun-Yi Kuo
Abstract: A micro channel structure includes a substrate, a supporting layer, a valve layer, a second insulation layer, a vibration layer and a bonding-pad layer. A flow channel is formed on the substrate. A conductive part and a movable part are formed on the supporting layer and the valve layer, respectively. A first chamber is formed at the interior of a base part and communicates to the hollow aperture. A supporting part is formed on the second insulation layer. A second chamber is formed at the interior of the supporting layer and communicates to the first chamber through the hollow aperture. A suspension part is formed on the vibration layer. By providing driving power sources having different phases to the bonding-pad layer, the suspension part moves upwardly and downwardly, and a relative displacement is generated between the movable part and the conductive part, to achieve fluid transportation.
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公开(公告)号：US11359618B2
公开(公告)日：2022-06-14
申请号：US16110204
申请日：2018-08-23
Applicant: Microjet Technology Co., Ltd.
Inventor： Hao-Jan Mou , Rong-Ho Yu , Cheng-Ming Chang , Hsien-Chung Tai , Wen-Hsiung Liao , Chang-Yen Tsai
IPC: F04B43/02 , F04B43/04 , F04B43/00 , F04B49/06 , F04B45/047 , G05D7/06 , H01L41/09 , H01L41/318 , H01L41/04 , F16K99/00
Abstract: The present disclosure provides a control method of a fluid device. The control method includes the steps of (a) providing the fluid device, which includes a plurality of flow guiding units manufactured by a micro-electro-mechanical-system process; (b) dividing the flow guiding units into a plurality of groups, which are electrically connected to and controlled by a control module; and (c) generating a driving signal by the control module for a corresponding one of the groups, wherein the control module generates a high level signal to a specific one of the groups, so that the flow guiding units of the specific one of the groups are driven to transport fluid, and thereby controlling the fluid device to discharge a specific amount of fluid.
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公开(公告)号：US20220161559A1
公开(公告)日：2022-05-26
申请号：US17473276
申请日：2021-09-13
Applicant: Microjet Technology Co., Ltd.
Inventor： Hao-Jan Mou , Ying-Lun Chang , Hsien-Chung Tai , Yung-Lung Han , Chi-Feng Huang , Wei-Ming Lee
IPC: B41J2/14
Abstract: A wafer structure is disclosed and includes a chip substrate and an inkjet chip. The chip substrate is a silicon substrate fabricated by a semiconductor process on a wafer of 12 inches. The inkjet chips are formed on the chip substrate by the semiconductor process and diced into the inkjet chip. The inkjet chip includes plural ink-drop generators generated by the semiconductor process on the chip substrate. Each of the plurality of ink-drop generators includes a nozzle. A diameter of the nozzle is in a range between 0.5 micrometers and 10 micrometers. A volume of an inkjet drop discharged from the nozzle is in a range between 1 femtoliter and 3 picoliters. The ink-drop generators form plural longitudinal axis array groups having a pitch and plural horizontal axis array groups having a central stepped pitch equal to or less than 1/600 inches.
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公开(公告)号：US20220161556A1
公开(公告)日：2022-05-26
申请号：US17468271
申请日：2021-09-07
Applicant: Microjet Technology Co., Ltd.
Inventor： Hao-Jan Mou , Ying-Lun Chang , Hsien-Chung Tai , Yung-Lung Han , Chi-Feng Huang , Chin-Wen Hsieh
Abstract: A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip having plural ink-drip generators. Each ink-drop generator includes a thermal-barrier layer, a resistance heating layer and a protective layer. The thermal-barrier layer is formed on the chip substrate, the resistance heating layer is formed on the thermal-barrier layer, a part of the protective layer is formed on the resistance heating layer, and the barrier layer is formed on the protective layer. The ink-supply chamber has a bottom in communication with the protective layer, and a top in communication with the nozzle. The thermal-barrier layer has a thickness of 500˜5000 angstroms, the protective layer has a thickness of 150˜3500 angstroms, the resistance heating layer has a thickness of 100˜500 angstroms, the resistance heating layer has a length of 5˜30 microns, and the resistance heating layer has a width of 5˜10 microns.
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Patent Agency Ranking
公开(公告)号：US20220161555A1
公开(公告)日：2022-05-26
申请号：US17405874
申请日：2021-08-18
Applicant: Microjet Technology Co., Ltd.
Inventor： Hao-Jan Mou , Ying-Lun Chang , Hsien-Chung Tai , Yung-Lung Han , Chi-Feng Huang , Chun-Yi Kuo
IPC: B41J2/14 , B41J2/16 , H01L29/423
Abstract: A wafer structure is disclosed and includes a chip substrate and plural inkjet chips having plural ink-drip generators. Each ink-drop generator includes a thermal-barrier layer, a resistance heating layer and a protective layer. The thermal-barrier layer is formed on the chip substrate, the resistance heating layer is formed on the thermal-barrier layer, a part of the protective layer is formed on the resistance heating layer, and the barrier layer is formed on the protective layer. The ink-supply chamber has a bottom in communication with the protective layer, and a top in communication with the nozzle. The thermal-barrier layer has a thickness of 500˜5000 angstroms, the protective layer has a thickness of 150˜3500 angstroms, the resistance heating layer has a thickness of 100˜500 angstroms, the resistance heating layer has a length of 5˜30 microns, and the resistance heating layer has a width of 5˜10 microns.
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公开(公告)号：US20220134746A1
公开(公告)日：2022-05-05
申请号：US17116186
申请日：2020-12-09
Applicant: Microjet Technology Co., Ltd.
Inventor： Hao-Jan Mou , Ying-Lun Chang , Hsien-Chung Tai , Chi-Feng Huang , Yung-Lung Han , Tsung-I Lin
Abstract: A wafer structure is disclosed and includes a chip substrate and a plurality of inkjet chips. The chip substrate is a silicon substrate which is fabricated by a semiconductor process. The plurality of inkjet chips include at least one first inkjet chip and at least one second inkjet chip. The plurality of inkjet chips are directly formed on the chip substrate by the semiconductor process, respectively, and diced into the at least one first inkjet chip and the at least one second inkjet chip, to be implemented for inkjet printing. Each of the first inkjet chip and the second inkjet chip includes a plurality of ink-drop generators produced by the semiconductor process and formed on the chip substrate. Each ink-drop generator includes a barrier layer, an ink-supply chamber and a nozzle. The ink-supply chamber and the nozzle are integrally formed in the barrier layer.
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公开(公告)号：US20210381947A1
公开(公告)日：2021-12-09
申请号：US17330769
申请日：2021-05-26
Applicant: Microjet Technology Co., Ltd.
Inventor： Hao-Jan Mou , Ying-Lun Chang , Hsien-Chung Tai , Chin-Chuan Wu , Chi-Feng Huang , Yung-Lung Han , Chin-Wen Hsieh
Abstract: A gas detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a light-emitting element, a particle-sensing element, a gas-sensing element, a driving-chip element and an encapsulation layer. The driving-chip element controls driving operations of the microelectromechanical element, the light-emitting element, the particle-sensing element and the gas-sensing element, respectively. When the microelectromechanical element is enabled to actuate transportation of gas, the gas is introduced into the gas detection device through an inlet aperture of the substrate. Scattered light spots generated by the light beam of the light-emitting element irradiating on suspended particles contained in the gas are received by the particle-sensing element to generate a detection datum of the suspended particles. The gas-sensing element detects the gas passing through and generates a detection datum of hazardous gas contained in the gas. Finally, the gas is discharged from an outlet aperture of the encapsulation layer.
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公开(公告)号：US20210296567A1
公开(公告)日：2021-09-23
申请号：US17249839
申请日：2021-03-16
Applicant: MICROJET TECHNOLOGY CO., LTD.
Inventor： Hao-Jan Mou , Hsien-Chung Tai , Lin-Huei Fang , Yung-Lung Han , Chi-Feng Huang , Chin-Wen Hsieh , Tsung-I Lin
IPC: H01L41/23 , H01L41/314 , H01L41/09 , B81C1/00
Abstract: A manufacturing method of micro fluid actuator includes: providing a substrate; depositing a first protection layer on a first surface of the substrate; depositing an actuation region on the first protection layer; applying lithography dry etching to a portion of the first protection layer to produce at least one first protection layer flow channel; applying wet etching to a portion of a main structure of the substrate to produce a chamber body and a first polycrystalline silicon flow channel region, while a region of an oxidation layer middle section of the main structure is not etched; applying reactive-ion etching to a portion of a second surface of the substrate to produce at least one substrate silicon flow channel; and applying dry etching to a portion of a silicon dioxide layer to produce at least one silicon dioxide flow channel.
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公开(公告)号：US20210291523A1
公开(公告)日：2021-09-23
申请号：US17206816
申请日：2021-03-19
Applicant: Microjet Technology Co., Ltd.
Inventor： Hao-Jan Mou , Rong-Ho Yu , Cheng-Ming Chang , Hsien-Chung Tai , Wen-Hsiung Liao , Chi-Feng Huang , Yung-Lung Han
IPC: B41J2/14
Abstract: A narrow type inkjet print head chip is disclosed and includes a silicon substrate, an active component layer and a passive component layer. The active component layer is stacked on the silicon substrate and includes plural ESD protection units, plural encoder switches, plural discharge protection units and plural heater switches. The ESD protection units, the encoder switches, the discharge protection units and the heater switches are disposed in each of at least two high-precision regions of the active component layer. The corresponding positions and quantities of these components are the same in the at least two high-precision regions. The passive component layer is stacked on the active component layer and includes plural heaters, plural electrode pads, plural encoders and plural circuit traces. The circuit traces are electrically connected to the ESD protection units, the encoder switches, the heater switches, the heaters, the electrode pads and the encoders.
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