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公开(公告)号：US11657891B2
公开(公告)日：2023-05-23
申请号：US17743989
申请日：2022-05-13
Applicant: Micron Technology, Inc.
Inventor： Guang Hu , Ting Luo , Chun Sum Yueng
Abstract: A method includes determining whether a data reliability parameter associated with a set of memory cells is greater than a threshold data reliability parameter and in response to determining that the data reliability parameter is greater than the threshold data reliability parameter, performing an error recovery operation. The method further includes, subsequent to performing the error recovery operation, determining whether the data reliability parameter associated with the set of memory cells is less than the threshold data reliability parameter and in response to determining that the data reliability parameter is less than the threshold data reliability parameter, setting an offset associated with the error recovery operation as a default read voltage for the set of memory cells.
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Patent Agency Ranking
公开(公告)号：US11625298B2
公开(公告)日：2023-04-11
申请号：US17746754
申请日：2022-05-17
Applicant: Micron Technology, Inc.
Abstract: An apparatus includes a memory sub-system comprising a plurality of memory blocks and a memory block defect detection component. The memory block defect detection component is to set, for a memory block among the plurality of memory blocks, a first block defect detection rate and determine whether the first block defect detection rate is greater than a threshold block defect detection rate for the at least one memory block. In response to a determination that the first block defect detection rate is greater than the threshold block defect detection rate for the memory block, the memory block defect detection component is to assert a program command on the memory block determine whether a program operation associated with assertion of the program command on the at least one memory block is successful. In response to a determination the program operation is unsuccessful, the memory block defect detection component is to determine that a failure involving a plane associated with the memory block and another plane of the memory sub-system has occurred.
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公开(公告)号：US20220413714A1
公开(公告)日：2022-12-29
申请号：US17357436
申请日：2021-06-24
Applicant: Micron Technology, Inc.
Inventor： Guang Hu , Jianmin Huang , Zhengang Chen
IPC: G06F3/06
Abstract: A method includes determining one or more quality attributes for memory cells of a memory device, receiving a memory access request involving data written to at least a portion of the memory cells, and determining whether the memory access request corresponds to a random read operation or a sequential read operation. The method further includes responsive to determining that the memory access request corresponds to a random read operation or responsive to determining that the one or more quality attributes for memory cells are greater than a threshold quality level, or both, selecting a read mode for use in performance of the random read operation and performing the random read operation using the selected read mode.
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公开(公告)号：US20220334753A1
公开(公告)日：2022-10-20
申请号：US17234095
申请日：2021-04-19
Applicant: Micron Technology, Inc.
Inventor： Chun Sum Yueng , Guang Hu , Ting Luo , Tao Liu
IPC: G06F3/06
Abstract: A method includes performing a first read operation involving a set of memory cells using a first voltage, determining a quantity of bits associated with the set of memory cells based on the first read operation, performing a second read operation involving the set of memory cells using a second voltage that is greater than the first voltage when the quantity of bits is above a threshold quantity of bits for the set of memory cells, and performing the second read operation involving the set of memory cells using a third voltage that is less than the first voltage when the quantity of bits is below the threshold quantity of bits for the set of memory cells.
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公开(公告)号：US11335429B1
公开(公告)日：2022-05-17
申请号：US17122864
申请日：2020-12-15
Applicant: Micron Technology, Inc.
Inventor： Guang Hu , Ting Luo , Chun Sum Yueng
Abstract: A method includes determining whether a data reliability parameter associated with a set of memory cells is greater than a threshold data reliability parameter and in response to determining that the data reliability parameter is greater than the threshold data reliability parameter, performing an error recovery operation. The method further includes, subsequent to performing the error recovery operation, determining whether the data reliability parameter associated with the set of memory cells is less than the threshold data reliability parameter and in response to determining that the data reliability parameter is less than the threshold data reliability parameter, setting an offset associated with the error recovery operation as a default read voltage for the set of memory cells.
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公开(公告)号：US20220138043A1
公开(公告)日：2022-05-05
申请号：US17087334
申请日：2020-11-02
Applicant: Micron Technology, Inc.
Abstract: An apparatus includes a memory sub-system comprising a plurality of memory blocks and a memory block defect detection component. The memory block defect detection component is to set, for a memory block among the plurality of memory blocks, a first block defect detection rate and determine whether the first block defect detection rate is greater than a threshold block defect detection rate for the at least one memory block. In response to a determination that the first block defect detection rate is greater than the threshold block defect detection rate for the memory block, the memory block defect detection component is to assert a program command on the memory block determine whether a program operation associated with assertion of the program command on the at least one memory block is successful. In response to a determination the program operation is unsuccessful, the memory block defect detection component is to determine that a failure involving a plane associated with the memory block and another plane of the memory sub-system has occurred.
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