Method of making semiconductor integrated circuit, pattern detecting
method, and system for semiconductor alignment and reduced stepping
exposure for use in same
    31.
    发明授权
    Method of making semiconductor integrated circuit, pattern detecting method, and system for semiconductor alignment and reduced stepping exposure for use in same 失效
    制造半导体集成电路的方法,图案检测方法和用于半导体对准的系统和减少的步进曝光在其中使用

    公开(公告)号:US5094539A

    公开(公告)日:1992-03-10

    申请号:US313180

    申请日:1989-02-21

    IPC分类号: G03F9/00

    CPC分类号: G03F9/70

    摘要: According to the present invention, in making alignment between a semiconductor integrated circuit wafer and a mask or a reticle in light exposure of the wafer with a monochromatic light such as g-, i- or h- line of a mercury lamp, using a reduced stepping exposure system, light from a predetermined pattern on the wafer is taken out to an off-axis position and observed according to a through-the-lens method; in this case as a characteristic feature of the invention, the observation light is taken out from below the reticle and is passed through chromatic aberration correcting lenses, thereby permitting the use of a polychromatic or continuous spectrum light.

    摘要翻译: 根据本发明,在使用诸如水银灯的g-,i-或h-线的单色光在晶片的曝光中在半导体集成电路晶片和掩模或掩模版之间进行对准时,使用还原 步进曝光系统,从晶片上的预定图案的光被取出到离轴位置,并根据透镜方法观察; 在这种情况下,作为本发明的特征,观察光从掩模版的下方取出并通过色像差校正透镜,从而允许使用多色或连续的光谱光。

    Exposure method and exposure apparatus
    32.
    发明授权
    Exposure method and exposure apparatus 失效
    曝光方法和曝光装置

    公开(公告)号:US4699505A

    公开(公告)日:1987-10-13

    申请号:US742786

    申请日:1985-06-10

    摘要: The invention deals with an exposure apparatus which detects environmental conditions such as atmospheric pressure, temperature and humidity in which the exposure apparatus is placed, and which maintains the projected magnification constant at all times based upon the detected values, so that the pattern can be reproduced precisely. Concretely, the apparatus comprises a detector to detect at least one of the tube temperature of the optical projecting system, humidity or atmospheric pressure near the optical system, and a control unit which controls optical characteristics based upon the signals detected by the detector. Namely, the control unit adjusts the optical characteristics depending upon the environmental conditions thereby to adjust variation in the projecting magnification and/or variation in the focal position. Thus, variation in the optical characteristics is adjusted to transfer the pattern maintaining high precision.

    摘要翻译: 本发明涉及一种检测放置曝光装置的大气压,温度和湿度等环境条件的曝光装置,并且基于检测值一直保持投影倍率恒定,从而可以再现图案 恰恰。 具体地,该装置包括检测光学投影系统的管温度,光学系统附近的湿度或大气压的至少一个的检测器,以及基于由检测器检测到的信号来控制光学特性的控制单元。 也就是说,控制单元根据环境条件调节光学特性,从而调整投影倍率的变化和/或焦点位置的变化。 因此,调整光学特性的变化以转印图案保持高精度。

    Field device search system
    36.
    发明申请
    Field device search system 有权
    现场设备搜索系统

    公开(公告)号:US20090170544A1

    公开(公告)日:2009-07-02

    申请号:US12316080

    申请日:2008-12-09

    申请人: Shinya Nakagawa

    发明人: Shinya Nakagawa

    IPC分类号: H04B7/00

    CPC分类号: G05B19/042 G05B2219/25062

    摘要: The field device search system is composed of a plurality of field devices having a wireless transmitting/receiving capability and an information terminal having a receiving capability to receive radio waves from a field device, wherein the information terminal includes a radio wave receiver, a CPU (arithmetic means), a display part, a memory, and member for identifying one of the plurality of field devices.

    摘要翻译: 现场设备搜索系统由具有无线发射/接收能力的多个现场设备和具有从现场设备接收无线电波的接收能力的信息终端组成,其中信息终端包括无线电波接收机,CPU( 算术装置),显示部分,存储器和用于识别多个现场设备之一的构件。

    MULTILAYER DISTRIBUTED PROCESSING SYSTEM
    37.
    发明申请
    MULTILAYER DISTRIBUTED PROCESSING SYSTEM 有权
    多层分布处理系统

    公开(公告)号:US20090013154A1

    公开(公告)日:2009-01-08

    申请号:US12162979

    申请日:2007-01-17

    IPC分类号: G06F15/76 G06F9/02

    CPC分类号: G06F9/466 G06F9/5055

    摘要: The independencies of a plurality of layers executing dividingly a transaction can be easily enhanced. Anode (30) assigns to a transaction to anode (30) of a lower layer through a distributed transaction management section. The node (30) shares a predetermined transaction with the node (30) of the lower layer along with other nodes (30). The node (30) shared by the nodes (30) is a read-only node or a node to which data can be written by the characteristic of a function. Thus the node (30) searches for an unused node (30) in lower layers through the distributed transaction management section (34) when the node starts a new transaction. First, second, and third node hosts (3,4,5) check if each node (30) is used for which transaction or if each node (30) is used or not and store the results.

    摘要翻译: 可以容易地增强分开执行事务的多个层的独立性。 阳极(30)通过分布式事务管理部分向下层的阳极(30)分配事务。 节点(30)与其他节点(30)一起与下层的节点(30)共享预定的事务。 由节点(30)共享的节点(30)是只读节点或能通过功能的特性写入数据的节点。 因此,当节点开始新的事务时,节点(30)通过分布式事务管理部分(34)搜索较低层中的未使用的节点(30)。 第一,第二和第三节点主机(3,4,5)检查每个节点(30)是否用于哪个事务,或者是否使用每个节点(30),并存储结果。

    Apparatus for monitoring in-situ the thickness of a film during film
deposition and a method thereof
    39.
    发明授权
    Apparatus for monitoring in-situ the thickness of a film during film deposition and a method thereof 失效
    用于在膜沉积期间原位监测膜厚度的装置及其方法

    公开(公告)号:US5923429A

    公开(公告)日:1999-07-13

    申请号:US172698

    申请日:1998-10-14

    CPC分类号: G01B11/0683

    摘要: A film deposition apparatus and a method thereof for accurately forming a film of a given thickness on the surface of a wafer is described. The film deposition apparatus includes a laser beam to perform a precise in-situ monitoring of a change in thickness of the film being deposited on the surface of the wafer. An optical guide is provided in an attachment coupled to the quartz furnace of a chemical vapor deposition apparatus. A laser beam is introduced into the quartz furnace through the optical guide, and is projected onto the wafer. The laser beam reflected by the wafer is channeled through the same optical guide to be discharged to the outside of the quartz furnace. A change in thickness of the film is monitored based on the strength of the reflected laser beam. In this manner, the laser beam can be transmitted without passing through the wall of the quartz furnace, and the thickness of the film can be accurately monitored without the process being affected by the thin film deposited on the internal wall of the quartz furnace.

    摘要翻译: 描述了一种用于在晶片表面上精确地形成给定厚度的膜的成膜装置及其方法。 成膜装置包括激光束,以对晶片表面上沉积的膜的厚度变化进行准确的原位监测。 在连接到化学气相沉积设备的石英炉的附件中提供光导。 激光束通过光导引入石英炉,并投射到晶片上。 由晶片反射的激光束被引导通过相同的光导,以被排放到石英炉的外部。 基于反射激光束的强度来监测胶片的厚度变化。 以这种方式,激光束可以在不通过石英炉的壁的情况下传输,并且可以精确地监测膜的厚度,而不会影响沉积在石英炉内壁上的薄膜的过程。

    Method of making semiconductor integrated circuit, pattern detecting
method, and system for semiconductor alignment and reduced stepping
exposure for use in same
    40.
    发明授权
    Method of making semiconductor integrated circuit, pattern detecting method, and system for semiconductor alignment and reduced stepping exposure for use in same 失效
    制造半导体集成电路的方法,图案检测方法以及用于半导体对准的系统和减少的步进曝光用于其中

    公开(公告)号:US5432608A

    公开(公告)日:1995-07-11

    申请号:US111310

    申请日:1993-08-24

    IPC分类号: G03F9/00 H01L21/30

    CPC分类号: G03F9/70

    摘要: According to the present invention, in making alignment between a semiconductor integrated circuit wafer and a mask or a reticle in light exposure of the wafer with a monochromatic light such as g-, i- or h-line of a mercury lamp, using a reduced stepping exposure system, light from a predetermined pattern on the wafer is taken out to an off-axis position and observed according to Through-the-Lens method; in this case as a characteristic feature of the invention, the observation light taken out from below the reticle is passed through chromatic aberration correcting lenses, thereby permitting the use of a polychromatic or continuous spectrum light.

    摘要翻译: 根据本发明,在采用诸如水银灯的g-,i-或h-线的单色光的晶片的曝光中,在半导体集成电路晶片和掩模或掩模版之间进行对准时,使用还原 步进曝光系统,从晶片上的预定图案的光线取出到离轴位置,并根据透镜法进行观察; 在这种情况下,作为本发明的特征,从掩模版下方取出的观察光通过色像差校正透镜,从而允许使用多色或连续光谱光。