公开(公告)号：US12014920B2

公开(公告)日：2024-06-18

申请号：US18074734

申请日：2022-12-05

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Michael X. Yang ,  Christian Pfahler ,  Alexandr Cosceev

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02238 ,  H01L21/67109

Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a hydrogen gas mixed with an inert gas can be reacted with an oxygen gas to oxidize a workpiece at atmospheric pressure. A chemical reaction of a hydrogen gas with an oxygen gas facilitated by a hot workpiece surface can positively affect an oxidation process. A reaction speed of the chemical reaction can be slowed down by mixing the hydrogen gas with an inert gas. Such mixture can effectively reduce a partial pressure of the hydrogen gas. As such, the oxidation process can be carried out at atmospheric pressure, thereby, in an atmospheric thermal processing chamber.

公开(公告)号：US11721539B2

公开(公告)日：2023-08-08

申请号：US17533593

申请日：2021-11-23

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Michael X. Yang ,  Rolf Bremensdorfer ,  Dave Camm ,  Joseph Cibere ,  Dieter Hezler ,  Shawming Ma ,  Yun Yang

IPC: H01J61/073 ,  H01J61/86 ,  H05H1/48 ,  H01J61/52 ,  H01J61/28

CPC classification number: H01J61/86 ,  H01J61/0732 ,  H01J61/28 ,  H01J61/526 ,  H05H1/48

Abstract: Apparatus, systems, and methods for processing workpieces are provided. An arc lamp can include a tube. The arc lamp can include one or more inlets configured to receive water to be circulated through the arc lamp during operation as a water wall, the water wall configured to cool the arc lamp. The arc lamp can include a plurality of electrodes configured to generate a plasma in a forming gas introduced into the arc lamp via the one or more inlets. The forming gas can be or can include a mixture of a hydrogen gas and an inert gas, the hydrogen gas in the mixture having a concentration less than 4% by volume. The hydrogen gas can be introduced into the arc lamp prior to generating the plasma. The arc lamp may be used for processing workpieces.

公开(公告)号：US11699603B2

公开(公告)日：2023-07-11

申请号：US16812526

申请日：2020-03-09

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Michael X. Yang ,  Chen-an Chen

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/66 ,  H01L21/268 ,  B23K26/066 ,  B23K26/03 ,  G02F1/157 ,  H05B3/00 ,  B23K101/40

CPC classification number: H01L21/67115 ,  B23K26/034 ,  B23K26/066 ,  G02F1/157 ,  H01L21/268 ,  H01L21/67248 ,  H01L22/26 ,  H05B3/0047 ,  B23K2101/40 ,  H05B2203/032

Abstract: A thermal processing system is provided. The thermal processing system can include a processing chamber and a workpiece disposed within the processing chamber. The thermal processing system can include a heat source configured to emit light towards the workpiece. The thermal processing system can further include a tunable reflective array disposed between the workpiece and the heat source. The tunable reflective array can include a plurality of pixels. Each pixel of the plurality of pixels can include an electrochromatic material configurable in a translucent state or an opaque state. When the electrochromatic material of a pixel is configured in the translucent state, the light at least partially passes through the pixel. Conversely, transmission of light through a pixel is reduced when the electrochromatic material of the pixel is configured in the opaque state.

公开(公告)号：US20230098442A1

公开(公告)日：2023-03-30

申请号：US18074713

申请日：2022-12-05

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Rolf Bremensdorfer ,  Johannes Keppler ,  Michael X. Yang ,  Thorsten Hülsmann

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/687

Abstract: Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., arears proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.

公开(公告)号：US11586113B2

公开(公告)日：2023-02-21

申请号：US16402405

申请日：2019-05-03

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Michael X. Yang

IPC: G03F7/40 ,  G03F7/20 ,  H01L21/027

Abstract: Post exposure bake methods are provided. In one example, a method includes placing a workpiece having a photoresist layer on a workpiece support disposed in a processing chamber. The method includes exposing the photoresist to photons of a wavelength through a photomask. The method includes performing a post exposure bake heating process on the workpiece with the photoresist heating layer. The post exposure bake heating process can include heating the workpiece with both a radiant heat source and a second heat source disposed in the workpiece support until a temperature of the workpiece reaches a post exposure bake setpoint temperature.

公开(公告)号：US11521868B2

公开(公告)日：2022-12-06

申请号：US16356074

申请日：2019-03-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Rolf Bremensdorfer ,  Johannes Keppler ,  Michael X. Yang ,  Thorsten Hülsmann

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/687

Abstract: Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., areas proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.

公开(公告)号：US11495456B2

公开(公告)日：2022-11-08

申请号：US16589270

申请日：2019-10-01

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Ting Xie ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: C23C16/02 ,  H01L21/02 ,  C23C16/50 ,  C23C16/458

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.

公开(公告)号：US11495437B2

公开(公告)日：2022-11-08

申请号：US16878661

申请日：2020-05-20

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/02

Abstract: Processes for oxidation of a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a pre-oxidation treatment process on the workpiece in the processing chamber to initiate oxide layer formation on the workpiece. The method includes performing a remote plasma oxidation process on the workpiece in the processing chamber to continue the oxide layer formation on the workpiece. Subsequent to performing the pre-oxidation treatment process and the remote plasma oxidation process, the method can include removing the workpiece from the processing chamber. In some embodiments, the remote plasma oxidation process can include generating a first plasma from a remote plasma oxidation process gas in a plasma chamber; filtering species generated in the plasma to generate a mixture having one or more radicals; and exposing the one or more radicals to the workpiece.

公开(公告)号：US20220059321A1

公开(公告)日：2022-02-24

申请号：US17516065

申请日：2021-11-01

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Qi Zhang ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  B08B7/00 ,  C01B3/02

Abstract: Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.

公开(公告)号：US20210343506A1

公开(公告)日：2021-11-04

申请号：US17245803

申请日：2021-04-30

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Haochen Li ,  Shuang Meng ,  Qiqun Zhang ,  Dave Kohl ,  Shawming Ma ,  Haichun Yang ,  Hua Chung ,  Ryan M. Pakulski ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: Apparatus and methods for processing a workpiece using a plasma are provided. In one example implementation, an apparatus can include a processing chamber. The apparatus can include a plasma chamber comprising a dielectric tube defining a sidewall. The apparatus can include an inductively coupled plasma source. The inductively coupled plasma source can include an RF generator configured to energize an induction coil disposed about the dielectric tube. The apparatus can include a separation grid separating the processing chamber from the plasma chamber. The apparatus can include a controller configured to operate the inductively coupled plasma source in a pulsed mode. During the pulsed mode the RF generator is configured to apply a plurality of pulses of RF power to the induction coil. A frequency of pulses can be in a range of about 1 kHz to about 100 kHz.