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    OPTICAL DEVICE AND LASER PROCESSING APPARATUS
    5.
    发明申请
    OPTICAL DEVICE AND LASER PROCESSING APPARATUS 审中-公开
    光学设备和激光加工设备

    公开(公告)号：US20170072506A1

    公开(公告)日：2017-03-16

    申请号：US15259503

    申请日：2016-09-08

    申请人： Kabushiki Kaisha Toshiba

    发明人： Tsubasa Kusaka

    IPC分类号： B23K26/03 ,  G01N21/88 ,  B23K26/04 ,  B23K26/08 ,  G02B27/14 ,  G02B17/08

    CPC分类号： B23K26/032 ,  B23K26/034 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0861 ,  B23K26/384 ,  G01N21/8806 ,  G01N2201/06113 ,  G01N2201/0636 ,  G02B17/0808 ,  G02B27/141

    摘要： In one embodiment, an optical device having a convex lens, a concave lens and a mirror member is provided. The convex lens is arranged on an axis and has a convex surface at one side in a direction of the axis. The convex lens reflects a first wavelength light and transmits a second wavelength light. The concave lens is arranged on the axis and at the other side in a direction of the axis and having a concave surface. The mirror member has a reflective surface opposing the convex surface and is arranged apart from an outer circumference of the convex lens.

    摘要翻译： 在一个实施例中，提供了具有凸透镜，凹透镜和镜构件的光学装置。 凸透镜布置在轴线上并且在轴的方向上的一侧具有凸表面。 凸透镜反射第一波长光并透射第二波长光。 凹透镜沿着轴线布置在轴线的另一侧并且具有凹面。 镜构件具有与凸表面相对的反射表面，并且与凸透镜的外圆周分开设置。

    Laser annealing systems and methods with ultra-short dwell times
    6.
    发明授权
    Laser annealing systems and methods with ultra-short dwell times 有权
    具有超短停留时间的激光退火系统和方法

    公开(公告)号：US09558973B2

    公开(公告)日：2017-01-31

    申请号：US14490446

    申请日：2014-09-18

    申请人： Ultratech, Inc.

    发明人： Andrew M. Hawryluk ,  Serguel Anikitchev

    IPC分类号： H01L21/00 ,  B23K26/08 ,  H01L21/67 ,  B23K26/00 ,  B23K26/03 ,  H01L21/02

    CPC分类号： H01L21/67115 ,  B23K26/00 ,  B23K26/034 ,  B23K26/08 ,  B23K2103/56 ,  H01L21/00 ,  H01L21/02675 ,  H01L21/268 ,  H01L21/67248

    摘要： Laser annealing systems and methods for annealing a semiconductor wafer with ultra-short dwell times are disclosed. The laser annealing systems can include one or two laser beams that at least partially overlap. One of the laser beams is a pre-heat laser beam and the other laser beam is the annealing laser beam. The annealing laser beam scans sufficiently fast so that the dwell time is in the range from about 1 μs to about 100 μs. These ultra-short dwell times are useful for annealing product wafers formed from thin device wafers because they prevent the device side of the device wafer from being damaged by heating during the annealing process. Embodiments of single-laser-beam annealing systems and methods are also disclosed.

    摘要翻译： 公开了具有超短停留时间的半导体晶片退火的激光退火系统和方法。 激光退火系统可以包括至少部分重叠的一个或两个激光束。 其中一个激光束是预热激光束，另一个激光束是退火激光束。 退火激光束扫描足够快，使得停留时间在约1μs至约100μs的范围内。 这些超短停留时间对于退火由薄的器件晶片形成的产品晶片是有用的，因为它们防止器件晶片的器件侧在退火过程中被加热而损坏。 还公开了单激光束退火系统和方法的实施例。

    Method and apparatus for producing three-dimensional objects
    7.
    发明授权
    Method and apparatus for producing three-dimensional objects 有权
    用于生产三维物体的方法和装置

    公开(公告)号：US09399321B2

    公开(公告)日：2016-07-26

    申请号：US13318748

    申请日：2009-07-15

    申请人： Ulric Ljungblad

    发明人： Ulric Ljungblad

    IPC分类号： B22F3/105 ,  B29C67/00 ,  B22F3/00

    CPC分类号： B23K26/342 ,  B22F3/004 ,  B22F3/1055 ,  B22F2003/1056 ,  B22F2003/1057 ,  B22F2998/00 ,  B22F2999/00 ,  B23K15/0013 ,  B23K15/0086 ,  B23K26/032 ,  B23K26/034 ,  B29C64/153 ,  B29C67/0077 ,  B33Y30/00 ,  B33Y50/02 ,  Y02P10/295 ,  B22F7/04 ,  B22F2207/15

    摘要： The invention concerns a method for producing three-dimensional objects (6) layer by layer using a powdery material (7) which can be solidified by irradiating it with a high-energy beam (4), said method comprising the steps of: applying a first layer of powdery material onto a working area (5); solidifying a part of said first layer by irradiating it with a high-energy beam; and applying a second layer (8) of powdery material onto the first, partly solidified layer. The invention is characterized in that the method comprises the step of: determining a rate at which the temperature of the second layer (8) increases after application onto the first layer. The invention also concerns an apparatus configured to operate according to the above method.

    摘要翻译： 本发明涉及一种使用粉末材料（7）逐层生产三维物体（6）的方法，其可以通过用高能束（4）照射而固化，所述方法包括以下步骤：施加 第一层粉状材料到工作区域（5）上; 通过用高能束照射来固化所述第一层的一部分; 以及将第二层（8）的粉末材料施加到所述第一部分固化的层上。 本发明的特征在于该方法包括以下步骤：确定施加到第一层上之后第二层（8）的温度升高的速率。 本发明还涉及一种被配置为根据上述方法操作的装置。

    METHOD AND APPARATUS FOR FORMING DEVICE QUALITY GALLIUM NITRIDE LAYERS ON SILICON SUBSTRATES
    8.
    发明申请
    METHOD AND APPARATUS FOR FORMING DEVICE QUALITY GALLIUM NITRIDE LAYERS ON SILICON SUBSTRATES 有权
    在硅基板上形成器件质量梯度的氮化物层的方法和装置

    公开(公告)号：US20160203972A1

    公开(公告)日：2016-07-14

    申请号：US14909004

    申请日：2014-09-17

    申请人： ULTRATECH, INC.

    发明人： Ganesh Sundaram ,  Andrew M. Hawryluk ,  Daniel Stearns

    IPC分类号： H01L21/02 ,  H01L29/20 ,  C23C16/22

    CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

    摘要： Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably selected to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layers after deposition by ALD. In preferred embodiments a silicon substrate is overlaid with an AIN nucleation layer and laser annealed. Thereafter a GaN device layers is applied over the AIN layer by an ALD process and then laser annealed. In a further example embodiment a transition layer is applied between the GaN device layer and the AIN nucleation layer. The transition layer comprises one or more different transition material layers each comprising a AlxGa1-x compound wherein the composition of the transition layer is continuously varied from AIN to GaN.

    摘要翻译： 原子层沉积（ALD）用于在80-400℃的反应温度下进行异质外延膜生长。优选选择底物和膜材料以利用域匹配外延（DME）。 激光退火系统用于通过ALD沉积后对沉积层进行热退火。 在优选实施例中，硅衬底用AIN成核层覆盖并进行激光退火。 此后，通过ALD工艺将GaN器件层施加在AIN层上，然后进行激光退火。 在另一示例实施例中，将过渡层施加在GaN器件层和AIN成核层之间。 过渡层包括一个或多个不同的过渡材料层，每个过渡材料层均包含Al x Ga 1-x化合物，其中过渡层的组成从AIN到GaN连续变化。

    SYSTEM AND METHOD FOR CONTROLLING THE INPUT ENERGY FROM AN ENERGY POINT SOURCE DURING METAL PROCESSING
    9.
    发明申请
    SYSTEM AND METHOD FOR CONTROLLING THE INPUT ENERGY FROM AN ENERGY POINT SOURCE DURING METAL PROCESSING 审中-公开
    用于在金属加工过程中从能源点控制输入能量的系统和方法

    公开(公告)号：US20160151859A1

    公开(公告)日：2016-06-02

    申请号：US14558306

    申请日：2014-12-02

    申请人： Product Innovation and Engineering L.L.C.

    发明人： Todd Eugene Sparks

    IPC分类号： B23K26/342 ,  B23K26/06 ,  B23K26/03

    CPC分类号： B23K26/34 ,  B22F3/1055 ,  B22F2003/1056 ,  B22F2003/1057 ,  B22F2203/03 ,  B22F2203/11 ,  B22F2999/00 ,  B23K26/034 ,  B33Y10/00 ,  Y02P10/295

    摘要： A method for controlling, during metal processing, the input energy from an energy point source that directs focused emitted energy onto a metal workpiece having a geometry, wherein the directed focused emitted energy creates a melt pool and hot zone on the workpiece that emit radiation during the process. The method comprises determining a wavelength range for the emitted radiation that is within a spectral range of radiation emitted by the hot zone during processing that is comparatively high in amount in relation to the amount of radiation emitted by the melt pool in that spectral range during processing; directing the beam onto the workpiece to generate a melt pool and hot zone on the structure; measuring the intensity of radiation within the determined wavelength range; and adjusting the input energy from the energy point source based upon the measured intensity of radiation within the determined wavelength range.

    摘要翻译： 一种用于在金属加工期间控制来自能量点源的输入能量的方法，所述能量点源将聚焦的发射能量引导到具有几何形状的金属工件上，其中定向聚焦的发射能量在工件上产生熔融池和热区域， 的过程。 该方法包括确定在处理期间由热区域发射的辐射的光谱范围内的发射辐射的波长范围，其相对于处理期间在该光谱范围中的熔池发射的辐射量相对较高 ; 将梁引导到工件上以在结构上产生熔池和热区; 测量所确定的波长范围内的辐射强度; 以及基于在所确定的波长范围内的测量的辐射强度来调整来自能量点源的输入能量。

    TEMPERATURE SENSING APPARATUS, LASER PROCESSING SYSTEM, AND TEMPERATURE MEASURING METHOD
    10.
    发明申请
    TEMPERATURE SENSING APPARATUS, LASER PROCESSING SYSTEM, AND TEMPERATURE MEASURING METHOD 有权
    温度感测装置，激光加工系统和温度测量方法

    公开(公告)号：US20160096236A1

    公开(公告)日：2016-04-07

    申请号：US14504433

    申请日：2014-10-02

    申请人： Industrial Technology Research Institute

    发明人： Chia-Hung Cho ,  Yi-Chen Hsieh ,  Kai-Ping Chuang ,  Sen-Yih Chou ,  Chun-Jen Lin

    IPC分类号： B23K26/34 ,  B23K26/067 ,  B23K26/30 ,  G01J5/08 ,  B23K26/03

    CPC分类号： B23K26/342 ,  B22F3/1055 ,  B22F2003/1056 ,  B23K26/032 ,  B23K26/034 ,  B23K26/082 ,  B23K26/707 ,  B29C64/153 ,  B29C67/0077 ,  G01J5/0803 ,  G01J5/0806 ,  G01J5/0828 ,  G01J5/0846 ,  G01J2005/106 ,  Y02P10/295

    摘要： A temperature sensing apparatus configured to measure a temperature distribution of a surface to be measured is provided. The temperature sensing apparatus includes a lens set, a filtering module, a plurality of sensor arrays, and a processing unit. The lens set is configured to receive radiation from the surface to be measured. The filtering module is configured to filter the radiation from the lens set into a plurality of radiation portions respectively having different wavelengths. The sensor arrays are configured to respectively sense the radiation portions. The processing unit is configured to calculate an intensity ratio distribution of the radiation between the different wavelengths according to the radiation portions respectively sensed by the sensor arrays and determine the temperature distribution according to the intensity ratio distribution. A laser processing system and a temperature measuring method are also provided.

    摘要翻译： 提供了一种被配置为测量待测表面的温度分布的温度感测装置。 温度感测装置包括透镜组，滤光模块，多个传感器阵列和处理单元。 透镜组被配置为从待测量的表面接收辐射。 滤波模块被配置为将来自透镜组的辐射滤波成分别具有不同波长的多个辐射部分。 传感器阵列被配置成分别感测辐射部分。 处理单元被配置为根据由传感器阵列分别感测的辐射部分来计算不同波长之间的辐射的强度比分布，并根据强度比分布确定温度分布。 还提供了激光加工系统和温度测量方法。