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公开(公告)号：US20170218936A1
公开(公告)日：2017-08-03
申请号：US15392061
申请日：2016-12-28
发明人： Shih-Chang Chen , Chi-Feng Huang , Yung-Lung Han , Jia-Yu Liao , Shou-Hung Chen , Che-Wei Huang , Hung-Hsin Liao , Chao-Chih Chen , Jheng-Wei Chen , Ying-Lun Chang , Chia-Hao Chang , Wei-Ming Lee
摘要： A miniature fluid control device includes a piezoelectric actuator and a housing. The piezoelectric actuator comprises a suspension plate, an outer frame, at least one bracket and a piezoelectric ceramic plate. The piezoelectric ceramic plate is attached on a first surface of the suspension plate and has a length not larger than that of the suspension plate. The housing includes a gas collecting plate and a base. The gas collecting plate is a frame body with a sidewall and comprises a plurality of perforations. The base seals a bottom of the piezoelectric actuator and has a central aperture corresponding to the middle portion of the suspension plate. When the voltage is applied to the piezoelectric actuator, the suspension plate is permitted to undergo the curvy vibration, the fluid is transferred from the central aperture of the base to the gas-collecting chamber, and exited from the perforations.
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公开(公告)号：US20130328972A1
公开(公告)日：2013-12-12
申请号：US13689348
申请日：2012-11-29
发明人： Hao-Jan Mou , Ta-Wei Hsueh , Ying-Lun Chang , Kwo-Yuan Shi , Chin-Tsung Chen , Yung-Lung Han , Chi-Feng Huang
IPC分类号： B41J2/14
CPC分类号： B41J2/14 , B41J2/155 , B41J2202/20
摘要： An ink-jet printing module is used for a page-width array ink-jet printer. The ink jet printing module includes a page-width array platen and a plurality of ink-jet cartridges. The page-width array platen has a plurality of receiving cavities arranged as an array. Each of the ink-jet cartridges is detachably and independently embedded into one of the receiving cavities.
摘要翻译： 喷墨打印模块用于页宽阵列喷墨打印机。 喷墨打印模块包括页宽阵列压板和多个喷墨盒。 页宽阵列压板具有排列成阵列的多个容纳腔。 每个喷墨盒可拆卸地且独立地嵌入到一个接收腔中。
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公开(公告)号：US11944412B2
公开(公告)日：2024-04-02
申请号：US17336725
申请日：2021-06-02
发明人： Hao-Jan Mou , Ying-Lun Chang , Ching-Sung Lin , Chi-Feng Huang , Yung-Lung Han , Chang-Yen Tsai , Wei-Ming Lee , Chun-Yi Kuo , Tsung-I Lin
CPC分类号： A61B5/02133 , B81B3/0021 , A61B2560/0214 , A61B2562/028 , B81B2201/054 , B81B2203/0127 , B81B2207/012
摘要： A blood pressure detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a gas-pressure-sensing element, a driving-chip element, an encapsulation layer and a valve layer. The substrate includes inlet apertures. The microelectromechanical element and the gas-pressure-sensing element are stacked and integrally formed on the substrate. The encapsulation layer is encapsulated and positioned on the substrate. A flowing-channel space is formed above the microelectromechanical element and the gas-pressure-sensing element. The encapsulation layer includes an outlet aperture in communication with an airbag. The driving-chip element controls the microelectromechanical element, the gas-pressure-sensing element and valve units to transport gas. The gas is introduced into the flowing-channel space through the inlet apertures and transported into the airbag through the outlet aperture, to inflate the airbag for blood pressure measurement, and a detection datum of blood pressure outputted by the gas-pressure-sensing element is transmitted to the microprocessor to calculate.
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公开(公告)号：US11813863B2
公开(公告)日：2023-11-14
申请号：US17468271
申请日：2021-09-07
发明人： Hao-Jan Mou , Ying-Lun Chang , Hsien-Chung Tai , Yung-Lung Han , Chi-Feng Huang , Chin-Wen Hsieh
CPC分类号： B41J2/14024 , B41J2/14016 , B41J2/14112 , B41J2/1635 , B41J2202/11 , B41J2202/13
摘要： A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip having plural ink-drip generators. Each ink-drop generator includes a thermal-barrier layer, a resistance heating layer and a protective layer. The thermal-barrier layer is formed on the chip substrate, the resistance heating layer is formed on the thermal-barrier layer, a part of the protective layer is formed on the resistance heating layer, and the barrier layer is formed on the protective layer. The ink-supply chamber has a bottom in communication with the protective layer, and a top in communication with the nozzle. The thermal-barrier layer has a thickness of 500˜5000 angstroms, the protective layer has a thickness of 150˜3500 angstroms, the resistance heating layer has a thickness of 100˜500 angstroms, the resistance heating layer has a length of 5˜30 microns, and the resistance heating layer has a width of 5˜10 microns.
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公开(公告)号：US11738556B2
公开(公告)日：2023-08-29
申请号：US17410779
申请日：2021-08-24
发明人： Hao-Jan Mou , Ying-Lun Chang , Hsien-Chung Tai , Yung-Lung Han , Chi-Feng Huang , Chang-Yen Tsai
CPC分类号： B41J2/14024 , B41J2/14072 , B41J2/14112 , B41J2/14129 , B41J2/145 , B41J2/14145 , B41J2202/11 , B41J2202/13
摘要： A wafer structure including a chip substrate and plural inkjet chips is disclosed. The chip substrate is a silicon substrate fabricated by a semiconductor process on a wafer of at least 12 inches. The inkjet chips are formed on the chip substrate by the semiconductor process and diced into the first inkjet chip and the second inkjet chip. Each of the first inkjet chip and the second inkjet chip includes plural ink-drop generators. Each of the ink-drop generators includes a nozzle. A diameter of the nozzle is in a range between 0.5 micrometers and 10 micrometers. A volume of an inkjet drop discharged from the nozzle is in a range between 1 femtoliter and 3 picoliters. The ink-drop generators form plural longitudinal axis array groups having a pitch and form plural horizontal axis array groups having a central stepped pitch equal to 1/600 inches or less.
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公开(公告)号：US20220161559A1
公开(公告)日：2022-05-26
申请号：US17473276
申请日：2021-09-13
发明人： Hao-Jan Mou , Ying-Lun Chang , Hsien-Chung Tai , Yung-Lung Han , Chi-Feng Huang , Wei-Ming Lee
IPC分类号： B41J2/14
摘要： A wafer structure is disclosed and includes a chip substrate and an inkjet chip. The chip substrate is a silicon substrate fabricated by a semiconductor process on a wafer of 12 inches. The inkjet chips are formed on the chip substrate by the semiconductor process and diced into the inkjet chip. The inkjet chip includes plural ink-drop generators generated by the semiconductor process on the chip substrate. Each of the plurality of ink-drop generators includes a nozzle. A diameter of the nozzle is in a range between 0.5 micrometers and 10 micrometers. A volume of an inkjet drop discharged from the nozzle is in a range between 1 femtoliter and 3 picoliters. The ink-drop generators form plural longitudinal axis array groups having a pitch and plural horizontal axis array groups having a central stepped pitch equal to or less than 1/600 inches.
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公开(公告)号：US20220161556A1
公开(公告)日：2022-05-26
申请号：US17468271
申请日：2021-09-07
发明人： Hao-Jan Mou , Ying-Lun Chang , Hsien-Chung Tai , Yung-Lung Han , Chi-Feng Huang , Chin-Wen Hsieh
摘要： A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip having plural ink-drip generators. Each ink-drop generator includes a thermal-barrier layer, a resistance heating layer and a protective layer. The thermal-barrier layer is formed on the chip substrate, the resistance heating layer is formed on the thermal-barrier layer, a part of the protective layer is formed on the resistance heating layer, and the barrier layer is formed on the protective layer. The ink-supply chamber has a bottom in communication with the protective layer, and a top in communication with the nozzle. The thermal-barrier layer has a thickness of 500˜5000 angstroms, the protective layer has a thickness of 150˜3500 angstroms, the resistance heating layer has a thickness of 100˜500 angstroms, the resistance heating layer has a length of 5˜30 microns, and the resistance heating layer has a width of 5˜10 microns.
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公开(公告)号：US20220161555A1
公开(公告)日：2022-05-26
申请号：US17405874
申请日：2021-08-18
发明人： Hao-Jan Mou , Ying-Lun Chang , Hsien-Chung Tai , Yung-Lung Han , Chi-Feng Huang , Chun-Yi Kuo
IPC分类号： B41J2/14 , B41J2/16 , H01L29/423
摘要： A wafer structure is disclosed and includes a chip substrate and plural inkjet chips having plural ink-drip generators. Each ink-drop generator includes a thermal-barrier layer, a resistance heating layer and a protective layer. The thermal-barrier layer is formed on the chip substrate, the resistance heating layer is formed on the thermal-barrier layer, a part of the protective layer is formed on the resistance heating layer, and the barrier layer is formed on the protective layer. The ink-supply chamber has a bottom in communication with the protective layer, and a top in communication with the nozzle. The thermal-barrier layer has a thickness of 500˜5000 angstroms, the protective layer has a thickness of 150˜3500 angstroms, the resistance heating layer has a thickness of 100˜500 angstroms, the resistance heating layer has a length of 5˜30 microns, and the resistance heating layer has a width of 5˜10 microns.
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公开(公告)号：US20220134746A1
公开(公告)日：2022-05-05
申请号：US17116186
申请日：2020-12-09
发明人： Hao-Jan Mou , Ying-Lun Chang , Hsien-Chung Tai , Chi-Feng Huang , Yung-Lung Han , Tsung-I Lin
摘要： A wafer structure is disclosed and includes a chip substrate and a plurality of inkjet chips. The chip substrate is a silicon substrate which is fabricated by a semiconductor process. The plurality of inkjet chips include at least one first inkjet chip and at least one second inkjet chip. The plurality of inkjet chips are directly formed on the chip substrate by the semiconductor process, respectively, and diced into the at least one first inkjet chip and the at least one second inkjet chip, to be implemented for inkjet printing. Each of the first inkjet chip and the second inkjet chip includes a plurality of ink-drop generators produced by the semiconductor process and formed on the chip substrate. Each ink-drop generator includes a barrier layer, an ink-supply chamber and a nozzle. The ink-supply chamber and the nozzle are integrally formed in the barrier layer.
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公开(公告)号：US20210381947A1
公开(公告)日：2021-12-09
申请号：US17330769
申请日：2021-05-26
发明人： Hao-Jan Mou , Ying-Lun Chang , Hsien-Chung Tai , Chin-Chuan Wu , Chi-Feng Huang , Yung-Lung Han , Chin-Wen Hsieh
摘要： A gas detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a light-emitting element, a particle-sensing element, a gas-sensing element, a driving-chip element and an encapsulation layer. The driving-chip element controls driving operations of the microelectromechanical element, the light-emitting element, the particle-sensing element and the gas-sensing element, respectively. When the microelectromechanical element is enabled to actuate transportation of gas, the gas is introduced into the gas detection device through an inlet aperture of the substrate. Scattered light spots generated by the light beam of the light-emitting element irradiating on suspended particles contained in the gas are received by the particle-sensing element to generate a detection datum of the suspended particles. The gas-sensing element detects the gas passing through and generates a detection datum of hazardous gas contained in the gas. Finally, the gas is discharged from an outlet aperture of the encapsulation layer.
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