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31.发明授权公开(公告)号：US08981334B1
公开(公告)日：2015-03-17
申请号：US14070407
申请日：2013-11-01
Applicant: Micron Technology, Inc.
Inventor： Martin Schubert , Shu Qin , Scott E. Sills , D.V. Nirmal Ramaswamy , Allen McTeer , Yongjun Jeff Hu
CPC classification number: H01L45/1608 , H01L45/08 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/146 , H01L45/16
Abstract: Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron. The memory cell also has a switching material over and directly against the intermediate material, an ion reservoir material over the switching material, and a second electrode over the ion reservoir material. Some embodiments include methods of forming memory cells.
Abstract translation: 一些实施例包括具有第一电极的存储器单元，以及在第一电极之上并直接抵靠第一电极的中间材料。 中间材料包括对应于碳和硼之一或两者的稳定物质。 存储单元还具有超过并直接抵靠中间材料的开关材料，开关材料上方的离子储存器材料以及离子储存器材料上的第二电极。 一些实施例包括形成存储器单元的方法。
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公开(公告)号：US08975603B2
公开(公告)日：2015-03-10
申请号：US14171430
申请日：2014-02-03
Applicant: Micron Technology, Inc.
Inventor： Shu Qin , Allen McTeer
IPC: G21K5/04 , C23C16/515 , C23C14/48 , C23C14/16 , H01L21/223 , H01J37/32 , C23C16/517 , C23C16/28
CPC classification number: C23C14/48 , C23C14/16 , C23C16/28 , C23C16/515 , C23C16/517 , H01J37/32412 , H01L21/2236 , Y10S438/914
Abstract: Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.
Abstract translation: 本文公开了等离子体掺杂微型工件的系统和方法。 在一个实施例中，将硼离子注入到工件的区域中的方法包括在腔室中产生等离子体，以大约20％至大约50％的占空比选择性地将脉冲电势施加到工件，并且植入 离子种类进入工件的区域。
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公开(公告)号：US20140197134A1
公开(公告)日：2014-07-17
申请号：US14218428
申请日：2014-03-18
Applicant: Micron Technology, Inc.
Inventor： Shu Qin , Allen McTeer
CPC classification number: H01J37/32917 , C23C14/54 , C23C16/52 , G01N21/73 , H01J37/32935 , H01J37/32972
Abstract: Systems and methods for plasma processing of microfeature workpieces are disclosed herein. In one embodiment, a method includes generating a plasma in a chamber while a microfeature workpiece is positioned in the chamber, measuring optical emissions from the plasma, and determining a parameter of the plasma based on the measured optical emissions. The parameter can be an ion density or another parameter of the plasma.
Abstract translation: 本文公开了微型工件的等离子体处理的系统和方法。 在一个实施例中，一种方法包括在微型工件位于腔室中的同时在腔室中产生等离子体，测量等离子体的光发射，以及基于所测量的光发射来确定等离子体的参数。 该参数可以是等离子体的离子密度或其他参数。
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公开(公告)号：US20140144379A1
公开(公告)日：2014-05-29
申请号：US14171430
申请日：2014-02-03
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Shu Qin , Allen McTeer
IPC: C23C14/48
CPC classification number: C23C14/48 , C23C14/16 , C23C16/28 , C23C16/515 , C23C16/517 , H01J37/32412 , H01L21/2236 , Y10S438/914
Abstract: Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.
Abstract translation: 本文公开了等离子体掺杂微型工件的系统和方法。 在一个实施例中，将硼离子注入到工件的区域中的方法包括在腔室中产生等离子体，以大约20％至大约50％的占空比选择性地将脉冲电势施加到工件，并且植入 离子种类进入工件的区域。
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