公开(公告)号：US20210407583A1

公开(公告)日：2021-12-30

申请号：US17470883

申请日：2021-09-09

Applicant: Micron Technology, Inc.

Inventor： Daniel B. Penney ,  Jason M. Brown ,  Nathaniel J. Meier ,  Timothy B. Cowles ,  Jiyun Li

IPC: G11C11/406 ,  G11C11/408

Abstract: The address of victim rows may be determined based on rows that are accessed in a memory. The victim addresses may be stored and associated with a count for every time a victim row is “victimized.” When the count for a victim row reaches a threshold, the victim row may be refreshed to preserve data stored in the row. After the victim row has been refreshed, the count may be reset. When a victim row is accessed, the count may also be reset. The counts may be adjusted for closer victim rows (e.g., +/−1) at a faster rate than counts for more distant victim rows (e.g., +/−2). This may cause closer victim rows to be refreshed at a higher rate than more distant victim rows.

公开(公告)号：US20210304813A1

公开(公告)日：2021-09-30

申请号：US17347957

申请日：2021-06-15

Applicant: Micron Technology, Inc.

Inventor： Timothy B. Cowles ,  Jiyun Li ,  Beau D. Barry ,  Matthew D. Jenkinson ,  Nathaniel J. Meier ,  Michael A. Shore ,  Adam J. Grenzebach ,  Dennis G. Montierth

IPC: G11C11/406 ,  G11C11/408

Abstract: An apparatus may include a refresh control circuit with multiple timing circuits. The timing circuits may be used to control steal rates, e.g., the rate of refresh time slots dedicated to healing victim word lines of row hammers. The timing circuits may be controlled to allow independent adjustment of the steal rates for different victim word lines. Thus, different victim word lines may be refreshed at different rates and the different rates may be independent of one another.

公开(公告)号：US11069393B2

公开(公告)日：2021-07-20

申请号：US16431641

申请日：2019-06-04

Applicant: Micron Technology, Inc.

Inventor： Timothy B. Cowles ,  Jiyun Li ,  Beau D. Barry ,  Matthew D. Jenkinson ,  Nathaniel J. Meier ,  Michael A. Shore ,  Adam J. Grenzebach ,  Dennis G. Montierth

IPC: G11C7/00 ,  G11C11/406 ,  G11C11/408

Abstract: An apparatus may include a refresh control circuit with multiple timing circuits. The timing circuits may be used to control steal rates, e.g., the rate of refresh time slots dedicated to healing victim word lines of row hammers. The timing circuits may be controlled to allow independent adjustment of the steal rates for different victim word lines. Thus, different victim word lines may be refreshed at different rates and the different rates may be independent of one another.

公开(公告)号：US11049565B2

公开(公告)日：2021-06-29

申请号：US15959868

申请日：2018-04-23

Applicant: Micron Technology, Inc.

Inventor： Timothy B. Cowles ,  George B. Raad ,  James S. Rehmeyer ,  Jonathan S. Parry

IPC: G11C16/14 ,  G11C16/30 ,  G11C17/16 ,  G11C17/18 ,  G11C16/22 ,  G11C13/00 ,  G11C11/16 ,  G11C11/22 ,  G11C16/08

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as a volatile memory by erasing or degrading data in the event of a changed power condition such as a power-loss event, a power-off event, or a power-on event. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to detect a changed power condition of the memory device, and to erase or degrade data at the one or more addresses in response to detecting the changed power condition.

公开(公告)号：US11004497B2

公开(公告)日：2021-05-11

申请号：US17018825

申请日：2020-09-11

Applicant: Micron Technology, Inc.

Inventor： George B. Raad ,  Jonathan S. Parry ,  James S. Rehmeyer ,  Timothy B. Cowles

IPC: G11C7/00 ,  G11C11/406 ,  G11C11/00 ,  G11C11/16 ,  G11C11/22 ,  G11C13/00

Abstract: Provided herein are memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.

公开(公告)号：US10892027B2

公开(公告)日：2021-01-12

申请号：US16543546

申请日：2019-08-17

Applicant: Micron Technology, Inc.

Inventor： Timothy B. Cowles ,  George B. Raad ,  James S. Rehmeyer ,  Jonathan S. Parry

IPC: G11C17/08 ,  G11C17/16 ,  G11C17/18 ,  G11C16/08 ,  G11C16/22 ,  G11C11/22 ,  G11C13/00 ,  G11C11/16

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as read-only memory by not implementing erase or write commands. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to compare an address of a received command to the one or more addresses, and at least in part based on the comparison, determine not to implement the received command. The circuitry can be further configured to return an error message after determining not to implement the received command.

公开(公告)号：US20200243146A1

公开(公告)日：2020-07-30

申请号：US16846049

申请日：2020-04-10

Applicant: Micron Technology, Inc.

Inventor： Jonathan S. Parry ,  George B. Raad ,  James S. Rehmeyer ,  Timothy B. Cowles

IPC: G11C16/34 ,  G11C11/406

Abstract: Memory devices, system, and methods for operating the same are provided. The memory device can comprise a non-volatile memory array and control circuitry. The control circuitry can be configured to store a value corresponding to a number of activate commands received at the memory device, update the value in response to receiving an activate command received from a host device, and trigger, in response to the value exceeding a predetermined threshold, a remedial action performed by the memory device. The control circuitry can be further configured to store a second value corresponding to a number of refresh operations performed by the memory device, update the second value in response to performing a refresh operation, and trigger, in response to the value exceeding a second predetermined threshold, a second remedial action performed by the memory device.

公开(公告)号：US20200035309A1

公开(公告)日：2020-01-30

申请号：US16591414

申请日：2019-10-02

Applicant: Micron Technology, Inc.

Inventor： Jonathan S. Parry ,  George B. Raad ,  James S. Rehmeyer ,  Timothy B. Cowles

IPC: G11C16/34 ,  G11C11/406

Abstract: Memory devices, system, and methods for operating the same are provided. The memory device can comprise a non-volatile memory array and control circuitry. The control circuitry can be configured to store a value corresponding to a number of activate commands received at the memory device, update the value in response to receiving an activate command received from a host device, and trigger, in response to the value exceeding a predetermined threshold, a remedial action performed by the memory device. The control circuitry can be further configured to store a second value corresponding to a number of refresh operations performed by the memory device, update the second value in response to performing a refresh operation, and trigger, in response to the value exceeding a second predetermined threshold, a second remedial action performed by the memory device.

公开(公告)号：US10482945B2

公开(公告)日：2019-11-19

申请号：US16375105

申请日：2019-04-04

Applicant: Micron Technology, Inc.

Inventor： George B. Raad ,  Jonathan S. Parry ,  James S. Rehmeyer ,  Timothy B. Cowles

IPC: G11C7/00 ,  G11C11/406

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.

公开(公告)号：US20190295606A1

公开(公告)日：2019-09-26

申请号：US15933687

申请日：2018-03-23

Applicant: Micron Technology, Inc.

Inventor： Jonathan S. Parry ,  George B. Raad ,  James S. Rehmeyer ,  Timothy B. Cowles

IPC: G11C5/14 ,  G11C7/22

Abstract: A memory device is provided. The memory device comprises a memory array and circuitry configured to determine one or more settings for the memory array corresponding to a powered-on state of the memory device, to store the one or more settings in a non-volatile memory location, and in response to returning to the powered-on state from a reduced-power state, to read the one or more settings from the non-volatile memory location.