公开(公告)号：US07855132B2

公开(公告)日：2010-12-21

申请号：US12057896

申请日：2008-03-28

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/425

CPC分类号： H01L21/76243 ,  H01L21/76251

摘要： The present invention provides a method of manufacturing a bonded wafer. The method includes forming an oxygen ion implantation layer in an active layer wafer having a substrate resistivity of 1 to 100 mΩcm by implanting oxygen ions in the active layer wafer, bonding a base wafer and the active layer wafer directly or through an insulating layer to form a bonded wafer, heat treating the bonded wafer to strengthen the bond and convert the oxygen ion implantation layer into a stop layer, grinding, polishing, and/or etching, from the active layer wafer surface side, the bonded wafer in which the bond has been strengthened to expose the stop layer on a surface of the bonded wafer, removing the stop layer, and subjecting the bonded wafer from which the stop layer has been removed to a heat treatment under a reducing atmosphere to diffuse an electrically conductive component comprised in the active layer wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括通过在有源层晶片中注入氧离子，在基片电阻率为1〜100mΩ/ cm 2的有源层晶片中形成氧离子注入层，将基底晶片和有源层晶片直接或通过绝缘层 形成接合晶片，对接合的晶片进行加热处理，以加强结合，并将氧离子注入层转换成活性层晶片表面侧的停止层，研磨，抛光和/或蚀刻， 已经加强了接合以使接合晶片的表面上的停止层露出，去除停止层，并且在还原气氛下对已经去除了停止层的接合晶片进行热处理以扩散包含的导电组分 在有源层晶片中。

公开(公告)号：US20100199810A1

公开(公告)日：2010-08-12

申请号：US12675332

申请日：2008-08-20

申请人： Toshinari Katsunuma ,  Mikio Hanai ,  Yoshitada Arakawa ,  Harutsugu Yoshida ,  Jiro Tsukamoto ,  Nobuyuki Morimoto ,  Noritsugu Okada

发明人： Toshinari Katsunuma ,  Mikio Hanai ,  Yoshitada Arakawa ,  Harutsugu Yoshida ,  Jiro Tsukamoto ,  Nobuyuki Morimoto ,  Noritsugu Okada

IPC分类号： B25B21/00 ,  B25B23/00

CPC分类号： B25B21/02 ,  B25B23/00

摘要： When bolts are fastened to tack a door to a car body by means of a conventional impact wrench, the shavings stick to the surface of the door or car body, thereby to cause the poor coating quality such as a seeding when the inter-coating or finish-coating is performed in the coating procedure. An impact wrench provided is a fastening tool for fastening a bolt gripped by a socket, in a nut. The impact wrench includes a suction cover for covering the surroundings of the socket, and a suction port capable of sucking the atmosphere in the portion covered with the suction cover, and is constituted such that the atmosphere in the suction cover is sucked through the suction port to recover the shavings left at the time of fastening the bolt. This constitution makes it possible to prevent the shavings from being scattered to the surroundings. When the door is temporarily attached at the coating step to a car body, the poor coating quality such as the seeding, as might otherwise be caused by the shavings stuck to the surface of the car body or door, can be prevented and improved.

摘要翻译： 当通过常规的冲击扳手将螺栓紧固以将车门固定到车身时，刨削物粘附到门或车体的表面，从而当涂层或 在涂布过程中进行精加工。 提供的冲击扳手是用于将由插座夹持的螺栓紧固在螺母中的紧固工具。 所述冲击扳手包括用于覆盖所述插座的周围的吸入罩以及能够吸入由所述吸入盖覆盖的部分中的气氛的吸入口，并且构成为使得所述吸入盖的气氛通过所述吸入口 以恢复在紧固螺栓时留下的刨花。 这种构造使得可以防止刨屑散布到周围环境中。 当门在涂覆步骤中临时安装到车身时，可以防止和改善由粘附在车体或门的表面上的刨花引起的诸如播种的不良涂层质量。

公开(公告)号：US20100015779A1

公开(公告)日：2010-01-21

申请号：US12064605

申请日：2007-07-04

申请人： Nobuyuki Morimoto ,  Akihiko Endo ,  Etsurou Morita

发明人： Nobuyuki Morimoto ,  Akihiko Endo ,  Etsurou Morita

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/30625

摘要： There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects.In the production method of a bonded wafer by bonding a wafer for active layer to a wafer for support substrate and thinning the wafer for active layer, oxygen ions are implanted into the wafer for active layer to form an oxygen ion implanted layer in the active layer and thereafter a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not lower than 1100° C., and an oxide film formed on the exposed surface of the oxygen ion implanted layer is removed and then a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not higher than 1100° C.

摘要翻译： 提供了在变薄后具有优异的厚度均匀性但具有良好的表面粗糙度并且缺陷较少的接合晶片。 在通过将有源层用晶片与用于支撑基板的晶片接合并使用于有源层的晶片变薄的接合晶片的制造方法中，将氧离子注入到有源层用晶片中，在活性层中形成氧离子注入层 然后在非氧化性气氛中在不低于1100℃的温度下进行热处理，除去形成在氧离子注入层的暴露表面上的氧化膜，然后进行热处理 在不高于1100℃的温度下在非氧化性气氛中。

公开(公告)号：US20090117708A1

公开(公告)日：2009-05-07

申请号：US11933882

申请日：2007-11-01

申请人： Hideki Nishihata ,  Nobuyuki Morimoto ,  Akihiko Endo

发明人： Hideki Nishihata ,  Nobuyuki Morimoto ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A method for manufacturing an SOI substrate includes steps of forming a first oxide film on a surface of a first silicon substrate; implanting hydrogen ions into the surface of the first silicon substrate on which the first oxide film is formed to form an ion implant region inside the first silicon substrate; removing the entire or the portion of first oxide film; forming a laminate by bonding the second silicon substrate to a hydrogen ion-implanted surface of the first silicon substrate with the first oxide film, or second oxide film formed on a surface of the second silicon substrate, or the first oxide film and second oxide film, interposed therebetween; and subjecting the laminate to a heat treatment at a predetermined temperature to separate the first silicon substrate along the ion implant region, thereby obtaining an SOI substrate including a thin SOI layer formed on the second silicon substrate with the oxide film interposed therebetween. The method can reduce a degree of contamination from heavy metals inside the SOI substrate.

摘要翻译： SOI衬底的制造方法包括在第一硅衬底的表面上形成第一氧化膜的步骤; 将氢离子注入到其上形成有第一氧化膜的第一硅衬底的表面中以在第一硅衬底内部形成离子注入区; 去除第一氧化膜的全部或部分; 通过将第二硅衬底与形成在第二硅衬底的表面上的第一氧化物膜或第二氧化物膜的第一硅衬底的氢离子注入表面接合，或者将第一氧化物膜和第二氧化物膜 ; 以及在预定温度下对层压体进行热处理以沿离子注入区分离第一硅衬底，从而获得SOI衬底，其包括在第二硅衬底上形成的薄SOI层，其间插入有氧化膜。 该方法可以降低SOI衬底内重金属的污染程度。

公开(公告)号：US07446016B2

公开(公告)日：2008-11-04

申请号：US10570663

申请日：2004-09-08

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A bonded SOI substrate having an active layer which is free from crystal defects is obtained by adding more than 9×1018 atoms/cm3 of boron to a wafer for active layer (10). Since the boron concentration in the wafer for active layer is high, a silicon oxide film is formed at a high rate. Consequently, there can be obtained a Smart-Cut wafer with high throughput. Furthermore, damages to the active layer due to the ion implantation can be reduced, thereby improving the quality of the active layer.

摘要翻译： 通过向活性层（10）的晶片添加超过9×10 18原子/ cm 3的硼，得到具有无结晶缺陷的有源层的键合SOI衬底 ）。 由于用于有源层的晶片中的硼浓度高，因此以高速率形成氧化硅膜。 因此，可以获得具有高生产能力的Smart-Cut晶片。 此外，可以减少由于离子注入引起的对活性层的损伤，从而提高有源层的质量。

公开(公告)号：US20080124897A1

公开(公告)日：2008-05-29

申请号：US11823010

申请日：2007-06-25

申请人： Nobuyuki Morimoto ,  Hideki Nishihata

发明人： Nobuyuki Morimoto ,  Hideki Nishihata

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A bonded wafer is produced by implanting ions of a light element into a wafer for active layer to a predetermined depth position to form an ion implanted layer, bonding the wafer for active layer to a wafer for support substrate directly or through an insulating film of not more than 50 nm, exfoliating the wafer for active layer at the ion implanted layer and thinning an active layer exposed through the exfoliation to form the active layer having a predetermined thickness, in which the thickness of the active layer before the thinning is not more than 750 nm and an elongation of slip dislocation in a strength test of the wafer for active layer before the bonding is not more than 100 μm at a predetermined thickness.

摘要翻译： 通过将光元件的离子注入用于有源层的晶片到预定深度位置来形成键合晶片，以形成离子注入层，将用于有源层的晶片直接将晶片用于支撑衬底的晶片或通过非绝缘膜 超过50nm，在离子注入层剥离有源层的晶片，并使通过剥离暴露的活性层变薄以形成具有预定厚度的活性层，其中在稀化之前活性层的厚度不大于 750nm以下，并且在接合前的有源层用晶片的强度试验中，滑动位错的伸长率为100μm以下。

公开(公告)号：US20080070377A1

公开(公告)日：2008-03-20

申请号：US11855959

申请日：2007-09-14

申请人： Nobuyuki Morimoto ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Akihiko Endo

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： A method of producing a bonded wafer, comprising: performing bonding of a first semiconductor wafer and a second semiconductor wafer without interposing an insulation film in between; and performing thinning of the second semiconductor wafer, wherein surface portions at least including bonded surfaces of the first semiconductor wafer and the second semiconductor wafer have an oxygen concentration of 1.0×1018 atoms/cm3 (Old ASTM or less.

摘要翻译： 一种制造接合晶片的方法，其特征在于，包括：在不在其间插入绝缘膜的情况下进行第一半导体晶片和第二半导体晶片的接合; 以及执行第二半导体晶片的薄化，其中至少包括第一半导体晶片和第二半导体晶片的键合表面的表面部分的氧浓度为1.0×10 18原子/ cm 3， / SUP>（旧ASTM或更低。

公开(公告)号：US20070184631A1

公开(公告)日：2007-08-09

申请号：US11562635

申请日：2006-11-22

申请人： Shinya Nakamura ,  Nobuyuki Morimoto

发明人： Shinya Nakamura ,  Nobuyuki Morimoto

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： The method of manufacturing a bonded wafer including, implanting hydrogen ions, rare gas ions, or a mixture of hydrogen ions and rare gas ions into a bond wafer to form an ion implantation layer in the bond wafer, bonding the bond wafer in which the ion implantation layer has been formed to a base wafer to form a bonded wafer, and subjecting the bonded wafer to heat treatment to separate the bond wafer from the base wafer at the ion implantation layer as boundary to form the bonded wafer. In the method of manufacturing a bonded wafer, the heat treatment at least from the start of the separation to the end of the separation is conducted in an oxidizing atmosphere.

摘要翻译： 包括将氢离子，稀有气体离子或氢离子和稀有气体离子的混合物注入接合晶片以在接合晶片中形成离子注入层的粘合晶片的制造方法，将接合晶片接合，其中离子 注入层已经形成到基底晶片以形成接合晶片，并且对接合的晶片进行热处理，以在离子注入层作为边界将接合晶片与基底晶片分离，以形成接合晶片。 在制造接合晶片的方法中，至少从分离开始到分离结束的热处理在氧化气氛中进行。

公开(公告)号：US20060281280A1

公开(公告)日：2006-12-14

申请号：US10570663

申请日：2004-09-08

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： A bonded SOI substrate having an active layer which is free from crystal defects is obtained by adding more than 9×1018 atoms/cm3 of boron to a wafer for active layer (10). Since the boron concentration in the wafer for active layer is high, a silicon oxide film is formed at a high rate. Consequently, there can be obtained a Smart-Cut wafer with high throughput. Furthermore, damages to the active layer due to the ion implantation can be reduced, thereby improving the quality of the active layer.

摘要翻译： 通过向活性层（10）的晶片添加超过9×10 18原子/ cm 3的硼，得到具有无结晶缺陷的有源层的键合SOI衬底 ）。 由于用于有源层的晶片中的硼浓度高，因此以高速率形成氧化硅膜。 因此，可以获得具有高生产能力的Smart-Cut晶片。 此外，可以减少由于离子注入引起的对活性层的损伤，从而提高有源层的质量。

公开(公告)号：US20060234461A1

公开(公告)日：2006-10-19

申请号：US11403410

申请日：2006-04-12

申请人： Hideki Nishihata ,  Tatsumi Kusaba ,  Nobuyuki Morimoto

发明人： Hideki Nishihata ,  Tatsumi Kusaba ,  Nobuyuki Morimoto

IPC分类号： H01L21/331

CPC分类号： H01L21/0206 ,  H01L21/76254

摘要： In the production process of an SOI substrate using a hydrogen ion implantation method, a process is provided for cleaning the substrate which can prevent formation of voids when bonding substrates and formation of blistering after exfoliation. In the process for cleaning, cleaning of the substrate is performed before performing hydrogen ion implantation. As the cleaning method, one or more of a combination selected from the group consisting of SC-1 cleaning, SC-1 cleaning+SC-2 cleaning, HF/O3 cleaning, and HF cleaning+O3 cleaning, can be used.

摘要翻译： 在使用氢离子注入法的SOI衬底的制造方法中，提供了清洗衬底的过程，其可以防止在接合衬底时形成空隙并且在剥离之后形成起泡。 在清洗过程中，在进行氢离子注入之前进行基板的清洗。 作为清洗方法，选自SC-1清洗，SC-1清洗+ SC-2清洗，HF / O 3清洗和HF清洗+ O的组合中的一种或多种 可以使用 _{3 清洁。}