公开(公告)号：US20070184631A1

公开(公告)日：2007-08-09

申请号：US11562635

申请日：2006-11-22

申请人： Shinya Nakamura ,  Nobuyuki Morimoto

发明人： Shinya Nakamura ,  Nobuyuki Morimoto

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： The method of manufacturing a bonded wafer including, implanting hydrogen ions, rare gas ions, or a mixture of hydrogen ions and rare gas ions into a bond wafer to form an ion implantation layer in the bond wafer, bonding the bond wafer in which the ion implantation layer has been formed to a base wafer to form a bonded wafer, and subjecting the bonded wafer to heat treatment to separate the bond wafer from the base wafer at the ion implantation layer as boundary to form the bonded wafer. In the method of manufacturing a bonded wafer, the heat treatment at least from the start of the separation to the end of the separation is conducted in an oxidizing atmosphere.

摘要翻译： 包括将氢离子，稀有气体离子或氢离子和稀有气体离子的混合物注入接合晶片以在接合晶片中形成离子注入层的粘合晶片的制造方法，将接合晶片接合，其中离子 注入层已经形成到基底晶片以形成接合晶片，并且对接合的晶片进行热处理，以在离子注入层作为边界将接合晶片与基底晶片分离，以形成接合晶片。 在制造接合晶片的方法中，至少从分离开始到分离结束的热处理在氧化气氛中进行。

公开(公告)号：US07858494B2

公开(公告)日：2010-12-28

申请号：US11466964

申请日：2006-08-24

申请人： Akihiko Endo ,  Hideki Nishihata ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Hideki Nishihata ,  Nobuyuki Morimoto

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/762 ,  H01L21/76254 ,  H01L21/76256 ,  H01L27/1203

摘要： Adhesion of particles due to static buildup during a laminated substrate manufacturing process is constrained, so as to reduce generation of a void or a blister in a lamination step and improve yield. A laminate 13 is formed by superimposing a first semiconductor substrate 11, which is to be an active layer, on a second semiconductor substrate 12, which is to be a supporting substrate, via an oxide film 11a. Electric resistance of either or both of the first and second semiconductor substrates 11 and 12 before superimposition is 0.005-0.2 Ωcm.

摘要翻译： 在层叠基板制造过程中由于静电积聚引起的颗粒的粘附受到限制，从而减少层压步骤中的空隙或泡罩的产生并提高产量。 通过将作为有源层的第一半导体基板11经由氧化膜11a叠加在作为支撑基板的第二半导体基板12上而形成层叠体13。 叠加之前的第一和第二半导体基板11和12中的任一个或两者的电阻为0.005-0.2Ω·cm。

公开(公告)号：US20100178750A1

公开(公告)日：2010-07-15

申请号：US12503784

申请日：2009-07-15

申请人： Satoshi Murakami ,  Akihiko Endo ,  Nobuyuki Morimoto ,  Hideki Nishihata

发明人： Satoshi Murakami ,  Akihiko Endo ,  Nobuyuki Morimoto ,  Hideki Nishihata

IPC分类号： H01L21/18

CPC分类号： H01L21/76254 ,  H01L21/76256

摘要： A bonded wafer is produced by removing a part or all of native oxide films formed on each surface of both a wafer for active layer and a wafer for support substrate to be bonded; forming a uniform oxide film with a thickness of less than 5 nm on at least one surface of these wafers by a given oxide film forming method; bonding the wafer for active layer to the wafer for support substrate through the uniform oxide film; thinning the wafer for active layer; and subjecting the bonded wafer to a given heat treatment in a non-oxidizing atmosphere to substantially remove the uniform oxide film existing in the bonding interface.

摘要翻译： 通过去除在有源层的晶片和待接合的支撑基板的晶片的每个表面上形成的一部分或全部自然氧化膜来制造键合晶片; 通过给定的氧化膜形成方法在这些晶片的至少一个表面上形成厚度小于5nm的均匀氧化物膜; 通过均匀的氧化膜将用于有源层的晶片结合到用于支撑衬底的晶片; 减薄晶圆的活性层; 并且在非氧化性气氛中使接合晶片进行给定的热处理，以基本上除去存在于接合界面中的均匀氧化膜。

公开(公告)号：US07563697B2

公开(公告)日：2009-07-21

申请号：US10570353

申请日：2004-09-03

申请人： Nobuyuki Morimoto ,  Hideki Nishihata

发明人： Nobuyuki Morimoto ,  Hideki Nishihata

IPC分类号： H01L21/322

CPC分类号： H01L21/3247 ,  H01L21/76254

摘要： Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500° C., so that a part of the bonded wafer is cleaved and separated, thereby producing an SOI wafer. Subsequently, thus-obtained SOI wafer is subjected to a heat treatment in an argon gas atmosphere. After that, the SOI wafer is subjected to an oxidation process in an oxidizing atmosphere, and thus formed oxide film is removed using an HF solution. Consequently, the surface of the SOI wafer is recrystallized and thus planarized.

摘要翻译： 通过绝缘膜将氢气离子注入用于有源层的硅晶片，然后将离子注入晶片通过绝缘膜与支撑晶片接合。 将该接合晶片加热至500℃，使得接合晶片的一部分被切割并分离，从而制造SOI晶片。 随后，将由此获得的SOI晶片在氩气气氛中进行热处理。 之后，在氧化气氛中对SOI晶片进行氧化处理，使用HF溶液除去形成的氧化膜。 因此，SOI晶片的表面被再结晶，从而平坦化。

公开(公告)号：US07494899B2

公开(公告)日：2009-02-24

申请号：US11105574

申请日：2005-04-14

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： This method for manufacturing a semiconductor substrate is characterized in that the method includes: a step of ion-implanting light element to a predetermined depth position in a single-crystal wafer of which a surface is a cleavage plane; and a step of heat-treating the single-crystal wafer so as to form light-element bubbles along a cleavage plane parallel to the surface of the single-crystal wafer within an ion-implanted region and thereby splitting off a portion of the single-crystal wafer on an ion-implanted side.

摘要翻译： 该半导体衬底的制造方法的特征在于，该方法包括：将光源离子注入到表面为解理面的单晶晶片中的规定深度位置的工序; 以及在离子注入区域内沿着与单晶晶片的表面平行的解理面形成发光元件气泡的单晶晶片的热处理工序，由此分离出单晶晶片的一部分， 离子注入侧的晶体晶片。

公开(公告)号：US20090023269A1

公开(公告)日：2009-01-22

申请号：US10570353

申请日：2004-09-03

申请人： Nobuyuki Morimoto ,  Hideki Nishihata

发明人： Nobuyuki Morimoto ,  Hideki Nishihata

IPC分类号： H01L21/762

CPC分类号： H01L21/3247 ,  H01L21/76254

摘要： Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500° C., so that a part of the bonded wafer is cleaved and separated, thereby producing an SOI wafer. Subsequently, thus-obtained SOI wafer is subjected to a heat treatment in an argon gas atmosphere. After that, the SOI wafer is subjected to an oxidation process in an oxidizing atmosphere, and thus formed oxide film is removed using an HF solution. Consequently, the surface of the SOI wafer is recrystallized and thus planarized.

摘要翻译： 通过绝缘膜将氢气离子注入用于有源层的硅晶片，然后将离子注入晶片通过绝缘膜与支撑晶片接合。 将该接合晶片加热至500℃，使得接合晶片的一部分被切割并分离，从而制造SOI晶片。 随后，将由此获得的SOI晶片在氩气气氛中进行热处理。 之后，在氧化气氛中对SOI晶片进行氧化处理，使用HF溶液除去形成的氧化膜。 因此，SOI晶片的表面被再结晶，从而平坦化。

公开(公告)号：US08671803B2

公开(公告)日：2014-03-18

申请号：US12675332

申请日：2008-08-20

申请人： Toshinari Katsunuma ,  Mikio Hanai ,  Yoshitada Arakawa ,  Harutsugu Yoshida ,  Jiro Tsukamoto ,  Nobuyuki Morimoto ,  Noritsugu Okada

发明人： Toshinari Katsunuma ,  Mikio Hanai ,  Yoshitada Arakawa ,  Harutsugu Yoshida ,  Jiro Tsukamoto ,  Nobuyuki Morimoto ,  Noritsugu Okada

IPC分类号： B25B21/00

CPC分类号： B25B21/02 ,  B25B23/00

摘要： When bolts are fastened to tack a door to a car body by means of a conventional impact wrench, the shavings stick to the surface of the door or car body, thereby to cause the poor coating quality such as a seeding when the inter-coating or finish-coating is performed in the coating procedure. An impact wrench provided is a fastening tool for fastening a bolt gripped by a socket, in a nut. The impact wrench includes a suction cover for covering the surroundings of the socket, and a suction port capable of sucking the atmosphere in the portion covered with the suction cover, and is constituted such that the atmosphere in the suction cover is sucked through the suction port to recover the shavings left at the time of fastening the bolt. This constitution makes it possible to prevent the shavings from being scattered to the surroundings. When the door is temporarily attached at the coating step to a car body, the poor coating quality such as the seeding, as might otherwise be caused by the shavings stuck to the surface of the car body or door, can be prevented and improved.

摘要翻译： 当通过常规的冲击扳手将螺栓紧固以将车门固定到车身时，刨削物粘附到门或车体的表面，从而当涂层或 在涂布过程中进行精加工。 提供的冲击扳手是用于将由插座夹持的螺栓紧固在螺母中的紧固工具。 所述冲击扳手包括用于覆盖所述插座的周围的吸入罩以及能够吸入由所述吸入盖覆盖的部分中的气氛的吸入口，并且构成为使得所述吸入盖的气氛通过所述吸入口 以恢复在紧固螺栓时留下的刨花。 这种构造使得可以防止刨屑散布到周围环境中。 当门在涂覆步骤中临时安装到车身时，可以防止和改善由粘附在车体或门的表面上的刨花引起的诸如播种的不良涂层质量。

公开(公告)号：US07851337B2

公开(公告)日：2010-12-14

申请号：US11801461

申请日：2007-05-09

申请人： Satoshi Murakami ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

发明人： Satoshi Murakami ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/425

CPC分类号： H01L21/76254

摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

摘要翻译： 提供了即使在没有氧化膜的层叠晶片中也抑制诸如空隙或起泡的缺陷的发生的方法，其中将氢离子注入到其表面上没有氧化膜的有源层的晶片中以形成氢离子注入层 ，除了氢以外的离子被注入到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，将活性层用的晶片层叠在支撑基板用的晶片上， 活性层晶片在氢离子注入层处被剥离。

公开(公告)号：US07795117B2

公开(公告)日：2010-09-14

申请号：US11796005

申请日：2007-04-25

申请人： Satoshi Murakami ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

发明人： Satoshi Murakami ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

IPC分类号： H01L21/322 ,  H01L21/301

CPC分类号： H01L21/76254

摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

摘要翻译： 提供了一种抑制诸如空隙或气泡之类的缺陷的发生的方法，即使在具有比常规厚度的氧化膜更薄的氧化膜的层压晶片中，其中将氢离子注入到具有氧化物膜的有源层的晶片中 不大于50nm的厚度以形成氢离子注入层，并且注入氢以外的离子到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，以及用于 通过氧化膜将有源层层压到用于支撑衬底的晶片上，然后在氢离子注入层处剥离有源层晶片。

公开(公告)号：US20100068867A1

公开(公告)日：2010-03-18

申请号：US12557809

申请日：2009-09-11

申请人： Tatsumi Kusaba ,  Akihiko Endo ,  Hideki Nishihata ,  Nobuyuki Morimoto

发明人： Tatsumi Kusaba ,  Akihiko Endo ,  Hideki Nishihata ,  Nobuyuki Morimoto

IPC分类号： H01L21/762

CPC分类号： H01L21/187 ,  H01L21/76256

摘要： A bonded silicon wafer is produced by a method comprising an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO2 layer exposing step; a step of removing the inner SiO2 layer; and a planarizing step of polishing a silicon wafer composite or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step).

摘要翻译： 通过在具有指定晶片面的有源层硅晶片上的氧离子注入步骤的方法制造粘结硅晶片; 将用于有源层的硅晶片接合到用于支撑的硅晶片的步骤; 第一热处理步骤; 内部SiO 2层曝光步骤; 去除内部SiO 2层的步骤; 以及平面化工序，对硅晶片复合体进行研磨，或者对所述硅晶片复合体进行还原气氛的热处理（第二热处理工序）。