公开(公告)号：US20190036303A1

公开(公告)日：2019-01-31

申请号：US16075853

申请日：2017-03-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler ,  Andreas Löffler

IPC: H01S5/06 ,  H01S5/22 ,  H01S5/30 ,  H01S5/34 ,  F21K9/64

Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15°.

公开(公告)号：US20150229103A1

公开(公告)日：2015-08-13

申请号：US14697228

申请日：2015-04-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernhard Stojetz ,  Alfred Lell ,  Christoph Eichler

IPC: H01S5/22 ,  H01S5/30 ,  H01S5/343 ,  H01S5/02

CPC classification number: H01S5/22 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/0653 ,  H01S5/2022 ,  H01S5/3013 ,  H01S5/34313 ,  H01S5/34333 ,  H01S2301/17

Abstract: A semiconductor laser diode includes a substrate. A semiconductor layer sequence on the substrate has at least one active layer designed for generating laser light that is emitted along an emission direction during operation. At least one filter layer has a main extension plane that is parallel to a main extension plane of the active layer and that is designed to scatter and/or absorb light that propagates in the semiconductor layer sequence and/or the substrate in addition to the laser light.

Abstract translation: 半导体激光二极管包括基板。 衬底上的半导体层序列具有至少一个有源层，被设计用于产生在操作期间沿发射方向发射的激光。 至少一个过滤层具有平行于有源层的主延伸面的主延伸平面，并且被设计成除了激光之外散射和/或吸收在半导体层序列和/或衬底中传播的光 光。