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    PWM CONTROLLED POWER SOURCE AND METHOD
    37.
    发明申请
    PWM CONTROLLED POWER SOURCE AND METHOD 有权

    公开(公告)号：US20220418068A1

    公开(公告)日：2022-12-29

    申请号：US17772892

    申请日：2020-10-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Hubert HALBRITTER

    IPC: H05B45/325 ,  G09G3/32

    Abstract: A PWM controlled current source includes a selection input, a modulation input, a switchable current source which can be switched by means of a signal at a control terminal and whose current output is configured for connection to a load, and an inverter circuit including an input node and an output coupled to the control terminal. The inverter circuit has a capacitance conditioned by elements of the inverter circuit. A start signal can be supplied to the input node in dependence on a selection signal at the selection input, which controls the switchable current source via the inverter circuit. The PWM controlled current source also includes a voltage-to-current converter that generates a current derived from a modulation signal at the modulation input and supplies it to the input node. The supplied current disconnects the switchable current source after a time period predetermined by the conditioned capacitance.

    SEMICONDUCTOR LASER DEVICE AND PROJECTION DEVICE
    38.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND PROJECTION DEVICE 有权

    公开(公告)号：US20220344905A1

    公开(公告)日：2022-10-27

    申请号：US17235996

    申请日：2021-04-21

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Hubert HALBRITTER ,  Ann RUSSELL

    IPC: H01S5/34 ,  H01S5/11 ,  H01S5/40 ,  G03B21/20

    Abstract: A semiconductor laser device comprises an active layer having a main extension plane, a first cladding layer and a second cladding layer where the active layer is arranged between the first and second cladding layer in a direction perpendicular to the main extension plane, at least one first emission region and at least one second emission region arranged next to each other in a direction parallel to the main extension plane, a light-outcoupling surface parallel to the main extension direction and arranged on a side of the second cladding layer opposite to the active layer, and a photonic crystal layer arranged in the first cladding layer or in second cladding layer. The photonic crystal layer may include a first photonic crystal structure in the first emission region and a second photonic crystal structure in the second emission region where the first and the second photonic crystal structures are different.

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