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    OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR CHIPS
    7.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR CHIPS 审中-公开
    光电半导体芯片和生产光电半导体晶体管的方法

    公开(公告)号：US20160276534A1

    公开(公告)日：2016-09-22

    申请号：US14442394

    申请日：2013-11-04

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Petrus SUNDGREN ,  Markus BROELL

    IPC: H01L33/14 ,  H01L33/40 ,  H01L31/18 ,  H01L31/0304 ,  H01L31/0232 ,  H01L33/30 ,  H01L33/00

    CPC classification number: H01L33/14 ,  H01L31/02327 ,  H01L31/03042 ,  H01L31/1852 ,  H01L31/186 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/305 ,  H01L33/32 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0016

    Abstract: An optoelectronic semiconductor chip (1) is provided which has a semiconductor body comprising a semiconductor layer sequence (2) with an active region (20) provided for generating and/or receiving radiation, a first semiconductor region (21) of a first conduction type, a second semiconductor region (22) of a second conduction type and a cover layer (25). The active region (20) is arranged between the first semiconductor region (21) and the second semiconductor region (22) and comprises a contact layer (210) on the side remote from the active region. The cover layer (25) is arranged on the side of the first semiconductor region (21) remote from the active region (20) and comprises at least one cut-out (27), in which the contact layer (210) adjoins the first connection layer (3). The cover layer is of the second conduction type. Furthermore, a method is provided for producing optoelectronic semiconductor chips.

    Abstract translation: 提供一种光电子半导体芯片（1），其具有半导体本体，该半导体主体包括具有用于产生和/或接收辐射的有源区（20）的半导体层序列（2），第一导电类型的第一半导体区 ，第二导电类型的第二半导体区域（22）和覆盖层（25）。 有源区域（20）被布置在第一半导体区域（21）和第二半导体区域（22）之间，并且包括在远离有源区域的一侧的接触层（210）。 覆盖层（25）布置在远离有源区域（20）的第一半导体区域（21）的侧面上并且包括至少一个切口（27），其中接触层（210）邻接第一 连接层（3）。 覆盖层是第二导电类型。 此外，提供了一种用于制造光电半导体芯片的方法。

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