公开(公告)号：US07283790B2

公开(公告)日：2007-10-16

申请号：US10020934

申请日：2001-12-19

Applicant: Pascal Chevalier ,  Lisa Perros-Meilhac ,  Eric Moulines

Inventor： Pascal Chevalier ,  Lisa Perros-Meilhac ,  Eric Moulines

IPC: H04B17/00

CPC classification number: H04L25/0204

Abstract: Blind or partially blind process to determine characteristic space-time parameters of a propagation channel in a system comprising at least one reception sensor receiving a signal y(t). It comprises at least one step in which the specular type structure of the channel is used and a step for the joint determination of parameters such as antenna vectors (a) and/or time vectors (τ) starting from second order statistics of the received signals.Application for monitoring the spectrum of a propagation channel for positioning purposes starting from one or several HF stations or for standard communication links with equalization or positioning or spatial filtering.

Abstract translation: 盲目或部分盲目的过程以确定包括接收信号y（t）的至少一个接收传感器的系统中的传播信道的特征空间 - 时间参数。 它包括至少一个步骤，其中使用信道的镜面类型结构，以及用于从接收信号的二阶统计开始的诸如天线矢量（a）和/或时间矢量（τ）的参数共同确定的步骤 。 用于从一个或多个HF站或用于具有均衡或定位或空间滤波的标准通信链路监测用于定位目的的传播信道的频谱的应用。

公开(公告)号：US07079988B2

公开(公告)日：2006-07-18

申请号：US10813673

申请日：2004-03-31

Applicant: Laurent Albera ,  Anne Ferreol ,  Pascal Chevalier ,  Pierre Comon

Inventor： Laurent Albera ,  Anne Ferreol ,  Pascal Chevalier ,  Pierre Comon

IPC: H04B15/00

CPC classification number: G06K9/6243 ,  G06F17/12 ,  G06F17/16 ,  G06F17/18

Abstract: A method for the blind identification of sources within a system having P sources and N receivers comprises at least one step for the identification of the matrix of the direction vectors of the sources from the information proper to the direction vectors ap of the sources contained redundantly in the m=2q order circular statistics of the vector of the observations received by the N receivers. Application to a communications network.

Abstract translation: 一种用于盲目识别具有P源和N个接收机的系统内的源的方法，包括至少一个步骤，用于根据适合于方向向量的信息识别源的方向向量的矩阵， SUB的源包含N个接收器接收的观测矢量的m = 2q次循环统计信息。 应用于通信网络。

公开(公告)号：US07062227B2

公开(公告)日：2006-06-13

申请号：US10083127

申请日：2002-02-27

Applicant: Pascal Chevalier ,  Jean-Marie Chaufray ,  Philippe Loubaton

Inventor： Pascal Chevalier ,  Jean-Marie Chaufray ,  Philippe Loubaton

IPC: H04B17/00

CPC classification number: H04L25/0212 ,  H04B1/7115 ,  H04L25/0224 ,  H04L25/0248

Abstract: A method and device to estimate the impulse response h of a propagation channel in a system comprising at least one or more sensors, comprising at least one step for estimating the statistics of the additive noise resulting from the interference and from the thermal noise on the basis of the statistics of the received signal

公开(公告)号：US20050037587A1

公开(公告)日：2005-02-17

申请号：US10914482

申请日：2004-08-09

Applicant: Bertrand Martinet ,  Michel Marty ,  Pascal Chevalier ,  Alain Chantre

Inventor： Bertrand Martinet ,  Michel Marty ,  Pascal Chevalier ,  Alain Chantre

IPC: H01L21/331 ,  H01L29/08 ,  H01L21/8222

CPC classification number: H01L29/66287 ,  H01L29/0817 ,  H01L29/66242

Abstract: A method for forming a heterojunction bipolar transistor including the steps of: forming in a semiconductor substrate a collector area of a first doping type; growing by epitaxy above a portion of the collector area a silicon/germanium layer of a second doping type forming a base area; forming above the silicon/germanium layer a sacrificial emitter formed of a material selectively etchable with respect to the silicon/germanium layer and with respect to the layers and consecutively-formed insulating spacers; forming first insulating spacers on the sides of the sacrificial emitter; growing by epitaxy a silicon layer above the exposed portions of the silicon/germanium layer; forming second insulating spacers adjacent to the first spacers and laid on the silicon layer; covering the entire structure with an insulating layer; partially removing the insulating layer above the sacrificial emitter and removing the sacrificial emitter; filling the space previously taken up by the sacrificial emitter with a semiconductor material of the first doping type.

Abstract translation: 一种用于形成异质结双极晶体管的方法，包括以下步骤：在半导体衬底中形成第一掺杂类型的集电极区域; 通过在集电区域的一部分上方的外延生长形成基区的第二掺杂类型的硅/锗层; 在硅/锗层之上形成由相对于硅/锗层可选择性地蚀刻的材料以及相对于层和连续形成的绝缘间隔物形成的牺牲发射体; 在所述牺牲发射体的侧面上形成第一绝缘间隔物; 通过将硅/锗层的暴露部分上的硅层外延生长; 形成与所述第一间隔物相邻的第二绝缘间隔物并铺设在所述硅层上; 用绝缘层覆盖整个结构; 部分去除牺牲发射体上方的绝缘层并去除牺牲发射极; 用第一掺杂类型的半导体材料填充先前由牺牲发射极占据的空间。