摘要:
A memory device includes a plurality of pairs of complimentary bit lines and a plurality of latch circuits. Each pair of the plurality of pairs of complimentary bit lines is coupled to a column of memory cells. Each latch circuit has an input coupled to a data line and a first output and a second output to provide complementary latched values dependent upon a value of the data line. For each latch of the plurality of latches, the first output is coupled to a first bit line of a pair of the plurality such that a value of the first bit line is continuously determined by the first output during memory device operation and the second output is coupled to a second bit line of the pair such that a value of the second bit line is continuously determined by the second output during memory device operation.
摘要:
A system (10) translates memory addresses. Processing circuitry (12) provides an effective address to a storage array (14, 16) having a plurality of stored effective addresses, each of the plurality of stored effective addresses having a corresponding pair of a lock bit and a valid bit. An output tag value and a single valid bit are provided to a comparator (18). The lock bit defines one of two predetermined classes of tasks executed by the system. The single valid bit is applicable to both of the two predetermined classes of tasks. The lock bit qualifies the clearing of the single valid bit. The comparator respectively compares the output tag value and the single valid bit with a predetermined effective address and a predetermined bit value. An output hit signal is provided when a match occurs to validate a physical address provided by a physical address array (20).
摘要:
A read/write memory has bit line pairs variously having a first or a second true/complement orientation. Data is selectively coupled to and from the bit line pairs to and from a data line pair via a column decoder. The memory has redundant bit line pairs aligned in the first true/complement arrangement. When a redundant bit line pair is implemented, the logic state of the data is inverted both for reading and for writing if the replaced bit line pair is of the second true/complement orientation. This results in the voltage impressed onto the memory cell for a given logic state is the same for the redundant bit line pair as for the bit line pair that it replaced.