公开(公告)号：US10249814B1

公开(公告)日：2019-04-02

申请号：US15947660

申请日：2018-04-06

Applicant: QUALCOMM Incorporated

Inventor： Chando Park ,  Seung Kang ,  Sungryul Kim ,  Wei-Chuan Chen

IPC: G11C11/00 ,  H01L43/02 ,  G01R33/09 ,  G11C11/16 ,  H01L43/08

Abstract: Aspects of the present disclosure relate to protecting the contents of memory in an electronic device, and in particular to systems and methods for transferring data between memories of an electronic device in the presence of strong magnetic fields. In one embodiment, a method of protecting data in a memory in an electronic device includes storing data in a first memory in the electronic device; determining, via a magnetic sensor, a strength of an ambient magnetic field; comparing the strength of the ambient magnetic field to a threshold; transferring the data in the first memory to a second memory in the electronic device upon determining that the strength of the ambient magnetic field exceeds the threshold; and transferring the data from the second memory to the first memory upon determining that the strength of the ambient magnetic field no longer exceeds the threshold.

公开(公告)号：US10134808B2

公开(公告)日：2018-11-20

申请号：US15137437

申请日：2016-04-25

Applicant: QUALCOMM Incorporated

Inventor： Jimmy Jianan Kan ,  Chando Park ,  Matthias Georg Gottwald ,  Seung Hyuk Kang

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic tunnel junction (MTJ) devices with a heterogeneous free layer structure particularly suited for efficient spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM) are disclosed. In one aspect, a MTJ structure with a reduced thickness first pinned layer section provided below a first tunnel magneto-resistance (TMR) barrier layer is provided. The first pinned layer section includes one pinned layer magnetized in one magnetic orientation. In another aspect, a second pinned layer section and a second TMR barrier layer are provided above a free layer section and above the first TMR barrier layer in the MTJ. The second pinned layer is magnetized in a magnetic orientation that is anti-parallel (AP) to that of the first pinned layer section. In yet another aspect, the free layer comprises first and second heterogeneous layers separated by an anti-ferromagnetic coupling spacer, the first and second heterogeneous layers differing in their magnetic anisotropy.

公开(公告)号：US10043967B2

公开(公告)日：2018-08-07

申请号：US14454509

申请日：2014-08-07

Applicant: QUALCOMM Incorporated

Inventor： Wei-Chuan Chen ,  Xiaochun Zhu ,  Xia Li ,  Yu Lu ,  Chando Park ,  Seung Hyuk Kang

IPC: H01L29/82 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A perpendicular magnetic tunnel junction (pMTJ) device includes a perpendicular reference layer, a tunnel barrier layer on a surface of the perpendicular reference layer, and a perpendicular free layer on a surface of the tunnel barrier layer. The pMTJ device also includes a dielectric passivation layer on the tunnel barrier layer and surrounding the perpendicular free layer. The pMTJ device further includes a high permeability material on the dielectric passivation layer that is configured to be magnetized by the perpendicular reference layer and to provide a stray field to the perpendicular free layer that compensates for a stray field from the perpendicular reference layer.

公开(公告)号：US20170104153A1

公开(公告)日：2017-04-13

申请号：US15389322

申请日：2016-12-22

Applicant: QUALCOMM Incorporated

Inventor： Vladimir Machkaoutsan ,  Matthias Georg Gottwald ,  Mustafa Badaroglu ,  Jimmy Kan ,  Kangho Lee ,  Yu Lu ,  Chando Park

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A semiconductor device includes a first magnetic tunnel junction (MTJ) device, a second MTJ device, and a top electrode. The first MTJ device includes a barrier layer. The second MTJ device includes the barrier layer. The top electrode is coupled to the first MTJ device and the second MTJ device.

公开(公告)号：US20170047510A1

公开(公告)日：2017-02-16

申请号：US14824507

申请日：2015-08-12

Applicant: QUALCOMM Incorporated

Inventor： Wei-Chuan Chen ,  Yu Lu ,  Chando Park ,  Seung Hyuk Kang

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) semiconductor elements is disclosed. Providing shadow-effect compensated fabrication of MTJ elements can provide reduced free layer sizing for enhanced MTJ operational margin. In certain aspects, to reduce size of a free layer during fabrication of an MTJ to provide enhanced write and retention symmetry, ion beam etching (IBE) fabrication process is employed to fabricate a free layer smaller than the pinned layer. To avoid asymmetrical footing being fabricated in free layer due to shadow-effect of neighboring MTJs, an ion beam directed at the MTJ is shadow-effect compensated. The angle of incidence of the ion beam directed at the MTJ is varied as the MTJ is rotated to be less steep when another MTJ is in directional line of the ion beam and the MTJ being fabricated. Thus, the free layer is etched more uniformly in the MTJ while avoiding increased etching damage.

Abstract translation: 公开了磁隧道结（MTJ）半导体元件的阴影效应补偿制造。 提供影子补偿制造的MTJ元件可以提供减少的自由层施胶，以提高MTJ的运行裕度。 在某些方面，为了减少制造MTJ期间的自由层的尺寸以提供增强的写入和保持对称性，使用离子束蚀刻（IBE）制造工艺来制造小于被钉扎层的自由层。 为了避免由于相邻的MTJ的阴影效应而在自由层中制造不对称的基脚，指向MTJ的离子束是阴影效应补偿的。 当MTJ在离子束的方向线和制造的MTJ的方向线上时，指向MTJ的离子束的入射角度随着MTJ旋转而不太陡峭而变化。 因此，在MTJ中更均匀地蚀刻自由层，同时避免增加蚀刻损伤。

公开(公告)号：US09379314B2

公开(公告)日：2016-06-28

申请号：US14109234

申请日：2013-12-17

Applicant: QUALCOMM Incorporated

Inventor： Chando Park ,  Kangho Lee ,  Seung Hyuk Kang

IPC: H01L29/82 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device includes a free layer. The MTJ also includes a barrier layer coupled to the free layer. The MTJ also has a fixed layer, coupled to the barrier layer. The fixed layer includes a first synthetic antiferromagnetic (SAF) multilayer having a first perpendicular magnetic anisotropy (PMA) and a first damping constant. The fixed layer also includes a second SAF multilayer having a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant. The first SAF multilayer is closer to the barrier layer than the second SAF multilayer. The fixed layer also includes a SAF coupling layer between the first and the second SAF multilayers.

Abstract translation: 磁隧道结（MTJ）装置包括自由层。 MTJ还包括耦合到自由层的阻挡层。 MTJ还具有耦合到阻挡层的固定层。 固定层包括具有第一垂直磁各向异性（PMA）和第一阻尼常数的第一合成反铁磁（SAF）多层。 固定层还包括具有第二垂直磁各向异性（PMA）和低于第一阻尼常数的第二阻尼常数的第二SAF多层。 第一SAF多层比第二SAF多层更靠近阻挡层。 固定层还包括在第一和第二SAF多层之间的SAF耦合层。

公开(公告)号：US20150340593A1

公开(公告)日：2015-11-26

申请号：US14286518

申请日：2014-05-23

Applicant: QUALCOMM Incorporated

Inventor： Yu Lu ,  Chando Park ,  Wei-Chuan Chen

IPC: H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: A method of forming a magnetic tunnel junction (MTJ) device includes forming a spacer on an exposed side portion of the MTJ device. The method further includes forming an etch-resistant protective coating associated with the MTJ device. The etch-resistant protective coating provides greater etch resistance than the spacer.

Abstract translation: 形成磁性隧道结（MTJ）装置的方法包括在MTJ装置的暴露侧部分上形成间隔物。 该方法还包括形成与MTJ装置相关联的耐蚀刻保护涂层。 耐蚀刻保护涂层比间隔物提供更大的耐蚀刻性。

公开(公告)号：US09142762B1

公开(公告)日：2015-09-22

申请号：US14229427

申请日：2014-03-28

Applicant: QUALCOMM Incorporated

Inventor： Xia Li ,  Kangho Lee ,  Wei-Chuan Chen ,  Yu Lu ,  Chando Park ,  Seung Hyuk Kang

IPC: H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L27/224 ,  H01L43/08 ,  H01L43/12

Abstract: An improved magnetic tunnel junction device and methods for fabricating the improved magnetic tunnel junction device are provided. The provided two-etch process reduces etching damage and ablated material redeposition. In an example, provided is a method for fabricating a magnetic tunnel junction (MTJ). The method includes forming a buffer layer on a substrate, forming a bottom electrode on the substrate, forming a pin layer on the bottom electrode, forming a barrier layer on the pin layer, and forming a free layer on the barrier layer. A first etching includes etching the free layer, without etching the barrier layer, the pin layer, and the bottom electrode. The method also includes forming a top electrode on the free layer, as well as forming a hardmask layer on the top electrode. A second etching includes etching the hardmask layer; the top electrode layer, the barrier layer, the pin layer, and the bottom electrode.

Abstract translation: 提供了一种改进的磁性隧道结装置和用于制造改进的磁性隧道结装置的方法。 所提供的双蚀刻工艺减少蚀刻损伤和烧蚀材料再沉积。 在一个实例中，提供了一种制造磁性隧道结（MTJ）的方法。 该方法包括在衬底上形成缓冲层，在衬底上形成底电极，在底电极上形成引脚层，在引脚层上形成阻挡层，并在阻挡层上形成自由层。 第一蚀刻包括蚀刻自由层，而不蚀刻阻挡层，引脚层和底部电极。 该方法还包括在自由层上形成顶部电极，以及在顶部电极上形成硬掩模层。 第二蚀刻包括蚀刻硬掩模层; 顶部电极层，阻挡层，针层和底部电极。

公开(公告)号：US20150263266A1

公开(公告)日：2015-09-17

申请号：US14460731

申请日：2014-08-15

Applicant: QUALCOMM Incorporated

Inventor： Matthias Georg Gottwald ,  Chando Park ,  Xiaochun Zhu ,  Kangho Lee ,  Seung Hyuk Kang

IPC: H01L43/08 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673

Abstract: An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.

Abstract translation: 一种装置包括垂直磁各向异性磁隧道结（pMTJ）装置。 pMTJ设备包括存储层和参考层。 参考层包括被配置为产生亚铁磁效应的部分。 该部分包括第一层，第二层和第三层。 第二层被配置为在pMTJ器件的操作期间反铁磁（AF）耦合第一层和第三层。

公开(公告)号：US10547460B2

公开(公告)日：2020-01-28

申请号：US15356112

申请日：2016-11-18

Applicant: QUALCOMM Incorporated

Inventor： Peiyuan Wang ,  Chando Park ,  Jimmy Jianan Kan ,  Seung Hyuk Kang

IPC: H04L9/32 ,  G06F21/73 ,  H04L9/08

Abstract: Exemplary features pertain to secure communications using Physical Unclonable Function (PUF) devices. Segments of a message to be encrypted are sequentially applied to a PUF device as a series of challenges to obtain a series of responses for generating a sequence of encryption keys, whereby a previous segment of the message is used to obtain a key for encrypting a subsequent segment of the message. The encrypted message is sent to a separate (receiving) device that employs a logical copy of the PUF device for decrypting the message. The logical copy of the PUF may be a lookup table or the like that maps all permissible challenges to corresponding responses for the PUF and may be generated in advance and stored in memory of the receiving device. The data to be encrypted may be further encoded to more fully exercise the PUF to enhance security. Decryption operations are also described.