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43 条记录 (耗时 0.024 秒)

    Magnetic read head having increased electron exchange
    31.
    发明授权
    Magnetic read head having increased electron exchange 失效
    磁读头具有增加的电子交换

    公开(公告)号：US07675717B2

    公开(公告)日：2010-03-09

    申请号：US11638271

    申请日：2006-12-12

    申请人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Brian R. York

    发明人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Brian R. York

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163

    摘要： A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a group consisting of Ta, NiFeCr, NiFeCoCr, NiFe, Cu, Ta/NiFeCr, Ta/NiFeCr/NiFe, Ta/Ru and Ta/NiFeCoCr, and an upper seed layer where the upper seed layer material is chosen from a group consisting of Ru, Cu, NiFe, Cu(x)Au(1−x)(x=0.22-0.5) alloys, Ru(x)Cr(1−x)(x=0.1-0.5) alloys, NiFeCr and NiFeCoCr. An AFM layer is formed on the upper seed layer and a ferromagnetic pinned layer is formed on the AFM layer. The exchange coupling energy Jk between the AFM layer and pinned layers exceeds 1.3 erg/cm2. Also disclosed is a method of fabrication of a magnetic head including a read head sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange.

    摘要翻译： 公开了CIP或CPP配置的磁头，其具有由于与AFM层的电子交换增加而具有强固定的铁磁层的读取传感器。 读取传感器包括下部种子层，其材料选自由Ta，NiFeCr，NiFeCoCr，NiFe，Cu，Ta / NiFeCr，Ta / NiFeCr / NiFe，Ta / Ru和Ta / NiFeCoCr组成的组，以及上层晶种层 其中上部种子层材料选自Ru，Cu，NiFe，Cu（x）Au（1-x）（x = 0.22-0.5）合金，Ru（x）Cr（1-x）（x = 0.1-0.5）合金，NiFeCr和NiFeCoCr。 在上种籽层上形成AFM层，在AFM层上形成铁磁性钉扎层。 AFM层和钉扎层之间的交换耦合能量Jk超过1.3erg / cm2。 还公开了一种由于增加的电子交换而制造包括具有强固定铁磁层的读头传感器的磁头的方法。

    Thin film magnetic disk having reactive element doped refractory metal seed layer
    35.
    发明授权
    Thin film magnetic disk having reactive element doped refractory metal seed layer 失效
    具有反应性元素掺杂难熔金属种子层的薄膜磁盘

    公开(公告)号：US06174582B1

    公开(公告)日：2001-01-16

    申请号：US09020151

    申请日：1998-02-06

    申请人： Xiaoping Bian ,  Shanlin Duan ,  Jinshan Li ,  Mohammad Mirzamaani

    发明人： Xiaoping Bian ,  Shanlin Duan ,  Jinshan Li ,  Mohammad Mirzamaani

    IPC分类号： G11B566

    CPC分类号： G11B5/732 ,  G11B5/7325 ,  G11B5/8404 ,  Y10S428/90 ,  Y10T428/12465 ,  Y10T428/265

    摘要： A method of fabricating a thin film magnetic disk including depositing a seed layer of a refractory metal such as tantalum, Cr, Nb, W, V, or Mo and a reactive element such as N or O; depositing a nonmagnetic underlayer onto the seed layer; and depositing a magnetic layer is disclosed. Also disclosed is a thin film magnetic disk having a substrate; a seed layer comprising tantalum and at least about 1 atomic-% of nitrogen or oxygen; an underlayer comprising Cr or an alloy of chromium deposited onto the seed layer, the underlayer preferably having a preferred orientation of [200]; and a magnetic layer deposited onto the underlayer, the magnetic layer preferably having a preferred orientation of [11{overscore (2)}0]. Also disclosed is a disk drive using the thin film magnetic disk of the invention.

    摘要翻译： 一种制造薄膜磁盘的方法，包括沉积诸如钽，Cr，Nb，W，V或Mo的难熔金属种子层和诸如N或O的反应性元件; 将非磁性底层沉积到种子层上; 并且公开了沉积磁性层。 还公开了具有基板的薄膜磁盘; 包含钽和至少约1原子％的氮或氧的种子层; 包含Cr或沉积在种子层上的铬的合金的底层，底层优选具有[200]的优选取向; 和沉积在底层上的磁性层，磁性层优选地具有优选取向为[11（超芯（2）} 0]。 还公开了使用本发明的薄膜磁盘的磁盘驱动器。

    Double optical grating
    36.
    发明授权
    Double optical grating 有权
    双光栅

    公开(公告)号：US08422841B1

    公开(公告)日：2013-04-16

    申请号：US12779160

    申请日：2010-05-13

    申请人： Zhong Shi ,  Hongxing Yuan ,  Shing Lee ,  Zhongyan Wang ,  Jinshan Li

    发明人： Zhong Shi ,  Hongxing Yuan ,  Shing Lee ,  Zhongyan Wang ,  Jinshan Li

    IPC分类号： G02B6/34

    CPC分类号： G02B6/124 ,  G02B27/4272

    摘要： A method and system for providing an optical grating are described. The optical grating is configured for light of a wavelength. The optical grating includes a top cladding, a first plurality of discrete ridges forming a first grating, a core, a second plurality of discrete ridges forming a second grating, and a bottom cladding. The first plurality of discrete ridges are spaced apart by a first pitch. The second plurality of discrete ridges are spaced apart by a second pitch. The core has a top side adjacent to at least a portion of the top cladding and a bottom side. The bottom cladding is adjacent to at least a portion of the bottom side of the core. The second grating resides between the bottom cladding and the core.

    摘要翻译： 描述了一种用于提供光栅的方法和系统。 光栅被配置用于波长的光。 光栅包括顶部包层，形成第一光栅的第一多个离散脊，芯，形成第二光栅的第二多个离散脊和底部包层。 第一多个离散脊部间隔开第一间距。 第二多个离散脊间隔开第二间距。 芯具有与顶部包层的至少一部分相邻的顶侧和底侧。 底部包层与芯的底侧的至少一部分相邻。 第二个光栅位于底部包层和芯之间。

    Method of making a magnetic sensing device having an insulator structure
    37.
    发明授权
    Method of making a magnetic sensing device having an insulator structure 有权
    制造具有绝缘体结构的磁感测装置的方法

    公开(公告)号：US07770282B2

    公开(公告)日：2010-08-10

    申请号：US11219107

    申请日：2005-09-01

    申请人： Alexander M. Zeltser ,  Jinshan Li ,  Brian York

    发明人： Alexander M. Zeltser ,  Jinshan Li ,  Brian York

    IPC分类号： G11B5/127 ,  B05D3/04

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3281 ,  H01F41/18 ,  H01F41/303 ,  H01F41/325 ,  Y10T29/49043 ,  Y10T29/49044

    摘要： A magnetic sensing device for use in a magnetic head includes a sensor stack structure having a sensing layer structure and an insulator structure formed adjacent the sensing layer structure. The insulator structure includes a plurality of oxidized metallic sublayers, a plurality of nitrided metallic sublayers, or a plurality of oxynitrided metallic sublayers. The insulator structure may be a capping layer structure of a giant magnetoresistance sensor or, alternatively, a tunnel barrier layer structure of a tunneling magnetoresistance sensor or a magnetic random access memory. Advantageously, each treated metallic sublayer is sufficiently uniformly treated so as to increase the magnetoresistive effect and improve soft magnetic properties of the magnetic sensing device. A method for use in forming the magnetic sensing device of the present application includes the steps of forming a sensor stack structure which includes a sensing layer structure; depositing a metallic layer; performing, on the metallic layer, either an oxidation, nitridation, or oxynitridation process; and repeating the steps of depositing and performing one or more times to thereby form an insulator structure.

    摘要翻译： 用于磁头的磁感测装置包括具有传感层结构的传感器堆叠结构和邻近传感层结构形成的绝缘体结构。 绝缘体结构包括多个氧化金属子层，多个氮化金属子层或多个氮氧化金属子层。 绝缘体结构可以是巨磁阻传感器的封盖层结构，或者是隧道磁阻传感器或磁随机存取存储器的隧道势垒层结构。 有利地，每个经处理的金属子层被充分均匀地处理，以增加磁阻效应并改善磁感测装置的软磁特性。 用于形成本申请的磁感测装置的方法包括以下步骤：形成包括感测层结构的传感器堆叠结构; 沉积金属层; 在金属层上进行氧化，氮化或氧氮化处理; 并重复沉积和执行一次或多次以形成绝缘体结构的步骤。

    GMR sensors with strongly pinning and pinned layers
    38.
    发明授权
    GMR sensors with strongly pinning and pinned layers 失效
    GMR传感器具有强固定和固定层

    公开(公告)号：US07554775B2

    公开(公告)日：2009-06-30

    申请号：US11069306

    申请日：2005-02-28

    申请人： Jinshan Li ,  Tsann Lin

    发明人： Jinshan Li ,  Tsann Lin

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

    摘要： A giant magnetoresistance (GMR) sensor with strongly pinning and pinned layers is described for magnetic recording at ultrahigh densities. The pinning layer is an antiferromagnetic (AFM) iridium-manganese-chromium (Ir—Mn—Cr) film having a Mn content of approximately from 70 to 80 atomic percent and having a Cr content of approximately from 1 to 10 atomic percent. The first pinned layer is preferably a ferromagnetic Co—Fe having an Fe content of approximately from 20 to 80 at % and having high, positive saturation magnetostriction. The second pinned layer is preferably a ferromagnetic Co—Fe having an Fe content of approximately from 0 to 10 atomic percent. The net magnetic moment of the first and second pinned layers is designed to be nearly zero in order to achieve a pinning field of beyond 3,000 Oe.

    摘要翻译： 描述了具有强钉扎和钉扎层的巨磁阻（GMR）传感器用于超高密度的磁记录。 钉扎层是具有大约70至80原子％的Mn含量并且Cr含量约为1至10原子％的反铁磁（AFM）铱 - 锰 - 铬（Ir-Mn-Cr）膜。 第一被钉扎层优选为Fe含量为约20至80at％且具有高正饱和磁致伸缩的铁磁性Co-Fe。 第二被钉扎层优选为Fe含量约为0〜10原子％的铁磁Co-Fe。 第一和第二被钉扎层的净磁矩被设计为几乎为零，以便实现超过3,000Oe的钉扎场。

    PINNED LAYER IN MAGNETORESISTIVE SENSOR
    40.
    发明申请
    PINNED LAYER IN MAGNETORESISTIVE SENSOR 有权
    磁性传感器中的固定层

    公开(公告)号：US20080019059A1

    公开(公告)日：2008-01-24

    申请号：US11458896

    申请日：2006-07-20

    申请人： Jinshan Li ,  Kouichi Nishioka ,  Satoshi Shigematsu ,  Alexander M. Zeltser

    发明人： Jinshan Li ,  Kouichi Nishioka ,  Satoshi Shigematsu ,  Alexander M. Zeltser

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/39

    摘要： A method for manufacturing a magnetic read sensor and a magnetic read sensor are provided. In one embodiment of the invention, the method includes providing a seed layer disposed over a substrate of the magnetic read sensor, providing a free layer disposed over a seed layer and providing a spacer layer disposed over the free layer. The method further includes providing a pinned layer disposed over the spacer layer. In one embodiment, the pinned layer includes cobalt and iron, wherein the concentration of iron in the pinned layer is between 33 and 37 atomic percent (at. %). The method further includes providing a pinning layer disposed over the pinned layer, wherein the pinning layer is in contact with the pinned layer.

    摘要翻译： 提供了一种用于制造磁读取传感器和磁读取传感器的方法。 在本发明的一个实施例中，该方法包括提供设置在磁读取传感器的衬底上的种子层，提供设置在种子层上的自由层并提供设置在自由层之上的间隔层。 该方法还包括提供设置在间隔层上方的钉扎层。 在一个实施例中，钉扎层包括钴和铁，其中钉扎层中的铁的浓度为33至37原子百分比（原子％）。 该方法还包括提供设置在钉扎层上方的钉扎层，其中钉扎层与钉扎层接触。