Method and device for removing particles on semiconductor wafers
    32.
    发明授权
    Method and device for removing particles on semiconductor wafers 有权
    用于去除半导体晶片上的颗粒的方法和装置

    公开(公告)号:US06946036B2

    公开(公告)日:2005-09-20

    申请号:US10085753

    申请日:2002-02-28

    摘要: The method for removing particles that adhere to the surface of semiconductor wafers is constituted so as to sequentially carry out a first cleaning process in which semiconductor wafers 100 are cleaned for a prescribed time in cleaning tank 104 containing a first cleaning solution consisting of ozone water, and, after said first cleaning process, a second cleaning process in which said semiconductor wafers 100 are cleaned for a prescribed time in cleaning tank 106 containing a second cleaning solution consisting of hydrogen water.

    摘要翻译: 构成除去附着在半导体晶片表面上的颗粒的方法,以便依次进行第一清洗处理,其中半导体晶片100在包含由臭氧水构成的第一清洗溶液的清洗槽104中清洗规定时间, 并且在所述第一清洗处理之后,进行第二清洗处理,其中将所述半导体晶片100在含有由氢水组成的第二清洗溶液的清洗槽106中清洗规定时间。

    Method for removing particles on semiconductor wafers
    35.
    发明授权
    Method for removing particles on semiconductor wafers 有权
    去除半导体晶片上的颗粒的方法

    公开(公告)号:US06973934B2

    公开(公告)日:2005-12-13

    申请号:US10072073

    申请日:2002-02-08

    IPC分类号: H01L21/304 B08B3/12 C25F5/00

    CPC分类号: B08B3/12 Y10S438/906

    摘要: The purpose of the present invention is to remove minute particles adhered to the surface of semiconductor wafers effectively in the cleaning process of semiconductor wafers. In the final rinsing step using ultra-pure water or hydrogen water and carried out after cleaning of semiconductor wafers with HF solution, ultrasonic waves are irradiated in the cleaning solution after a prescribed time delay (preferably 20-30 sec or more).

    摘要翻译: 本发明的目的是在半导体晶片的清洗过程中有效地去除附着在半导体晶片的表面上的微小颗粒。 在使用超纯水或氢水进行的最终漂洗步骤中,在用HF溶液清洗半导体晶片之后进行,在规定的时间延迟(优选20-30秒以上)之后,在清洗液中照射超声波。