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公开(公告)号：US10903814B2
公开(公告)日：2021-01-26
申请号：US15789024
申请日：2017-10-20
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Won Han , Chang Hyun Lim , Yong Suk Kim , Seung Hun Han , Sung Jun Lee , Sang Kee Yoon , Tae Yoon Kim
IPC: H03H9/02 , H03H9/17 , H01L41/047 , H03H9/54
Abstract: A bulk acoustic wave resonator includes a membrane layer, together with a substrate, forming a cavity, a lower electrode disposed on the membrane layer, a piezoelectric layer disposed on a flat surface of the lower electrode and an upper electrode covering a portion of the piezoelectric layer. An overall region at a side of the piezoelectric layer is exposed to the air. The side of the piezoelectric layer has a gradient of 65° to 90° with respect to a top surface of the lower electrode.
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公开(公告)号：US10833646B2
公开(公告)日：2020-11-10
申请号：US15702176
申请日：2017-09-12
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Chang Hyun Lim , Won Han , Moon Chul Lee , Tae Kyung Lee
Abstract: A bulk-acoustic wave resonator includes: a membrane layer disposed on a substrate and forming a cavity; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer, and including a frame part disposed at an edge of an active area and having a thickness greater than that of a portion of the upper electrode disposed in a central portion of the active area; and a frequency adjusting layer disposed on the piezoelectric layer and the upper electrode. The frequency adjusting layer is excluded from an inclined surface of the frame part, or a thickness of a portion of the frequency adjusting layer on the inclined surface is less than that of other portions of the frequency adjusting layer. The frequency adjusting layer is disposed on a portion of the piezoelectric layer protruding from the upper electrode.
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公开(公告)号：US10784837B2
公开(公告)日：2020-09-22
申请号：US15814869
申请日：2017-11-16
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Tae Hun Lee , Chang Hyun Lim , Tae Yoon Kim , Moon Chul Lee
Abstract: A bulk acoustic wave resonator includes a substrate including a first via and a second via, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, and an upper electrode connection member spaced apart from the lower electrode connection member. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. The lower electrode connection member electrically connects the lower electrode to the first via and supports a first edge portion of the resonant portion. The upper electrode connection member electrically connects the upper electrode to the second via and supports a second edge portion of the resonant portion. Either one or both of the upper electrode connection member and the lower electrode connection member includes a respective extension portion connected to a respective one of the first via and the second via that is disposed below the resonant portion.
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公开(公告)号：US10547285B2
公开(公告)日：2020-01-28
申请号：US15809696
申请日：2017-11-10
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Chang Hyun Lim , Yoon Sok Park , Jong Woon Kim , Tae Yoon Kim , Moon Chul Lee
Abstract: A bulk acoustic wave resonator includes a substrate including a cavity groove, a membrane layer disposed above the substrate and including a convex portion. And a lower electrode including a portion thereof disposed on the convex portion. The bulk acoustic wave resonator also includes a piezoelectric layer configured so that a portion of the piezoelectric layer is disposed above the convex portion, and an upper electrode disposed on the piezoelectric layer. A first space formed by the cavity groove and a second space formed by the convex portion form a cavity, the cavity groove is disposed below an active region, and the convex portion comprises an inclined surface disposed outside of the cavity groove.
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Patent Agency Ranking
公开(公告)号：US10541665B2
公开(公告)日：2020-01-21
申请号：US15876791
申请日：2018-01-22
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Moon Chul Lee , Tah Joon Park , Jae Chang Lee , Tae Yoon Kim , Chang Hyun Lim , Hwa Sun Lee , Tae Hun Lee , Hyun Min Hwang , Tae Kyung Lee
Abstract: A bulk acoustic wave (BAW) resonator includes: a substrate; a first BAW resonator including a first air cavity disposed in the substrate, and further including a first electrode, a first piezoelectric layer, and a second electrode stacked on the first air cavity; a second BAW resonator including a second air cavity disposed in the substrate, and further including a first electrode, a second piezoelectric layer, and a second electrode stacked on the second air cavity, wherein the second BAW resonator is connected in parallel to the first BAW resonator and has polarities that are opposite of polarities of the first BAW resonator; and a compensation capacitor circuit connected between the first BAW resonator and the second BAW resonator.
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公开(公告)号：US10476463B2
公开(公告)日：2019-11-12
申请号：US15815966
申请日：2017-11-17
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Tae Hun Lee , Chang Hyun Lim , Tae Yoon Kim , Moon Chul Lee
Abstract: A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.
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公开(公告)号：US10336605B2
公开(公告)日：2019-07-02
申请号：US14549544
申请日：2014-11-21
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Jong Woon Kim , Chang Hyun Lim , Sung Jun Lee , Jong Beom Kim
Abstract: There is provided a MEMS sensor including: a mass body; a support part floatably supporting the mass body; and a flexible beam having one end connected to the mass body and the other end connected to the support part. At least one end of the flexible beam connected to the mass body or the support part includes a curved portion to maximize an effective length supporting a load.
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公开(公告)号：US10267699B2
公开(公告)日：2019-04-23
申请号：US15045684
申请日：2016-02-17
Applicant: Samsung Electro-Mechanics Co., Ltd.
Inventor： Chang Hyun Lim , Dae Hun Jeong , Tae Hun Lee
IPC: G01L9/00
Abstract: A pressure sensor element includes a die; a cavity and a trench formed in one surface of the die and defining therebetween a partition wall integral with and formed of the same material as the die; and a membrane formed on the die and covering the cavity and the trench.
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公开(公告)号：US20180309428A1
公开(公告)日：2018-10-25
申请号：US15809696
申请日：2017-11-10
Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Inventor： Chang Hyun Lim , Yoon Sok Park , Jong Woon Kim , Tae Yoon Kim , Moon Chul Lee
Abstract: A bulk acoustic wave resonator includes a substrate including a cavity groove, a membrane layer disposed above the substrate and including a convex portion. And a lower electrode including a portion thereof disposed on the convex portion. The bulk acoustic wave resonator also includes a piezoelectric layer configured so that a portion of the piezoelectric layer is disposed above the convex portion, and an upper electrode disposed on the piezoelectric layer. A first space formed by the cavity groove and a second space formed by the convex portion form a cavity, the cavity groove is disposed below an active region, and the convex portion comprises an inclined surface disposed outside of the cavity groove.
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