公开(公告)号：US20130216845A1

公开(公告)日：2013-08-22

申请号：US13847222

申请日：2013-03-19

申请人： SixPoint Materials, Inc.

发明人： Tadao Hashimoto ,  Edward Letts ,  Masanori Ikari

IPC分类号： C30B7/10 ,  B32B15/01

CPC分类号： C30B7/105 ,  B32B15/01 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  C30B35/002 ,  Y10T428/12028

摘要： Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones.For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel.Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.

摘要翻译： 本发明公开了一种大尺寸的大型高压容器。 Ni-Cr基沉淀硬化型超合金。 船舶可能有多个区域。 例如，高压容器可以分为具有流量限制装置的至少三个区域，并且结晶区域设定为比其他区域更高的温度。 该结构有助于可靠地密封高压容器的两端，同时有助于大大减少容器底部的III族氮化物的不利沉淀。 本发明还公开了提高纯度，透明度和结构质量的晶体的新方法。 含碱金属的矿化剂以最低的氧气和湿度暴露于高压容器中充满氨。 介绍了在工艺步骤中减少氧气污染的几种方法。 公开了晶种的后蚀刻和新的温度梯度方案以改善结构质量。

公开(公告)号：US10354863B2

公开(公告)日：2019-07-16

申请号：US15716499

申请日：2017-09-26

申请人： SixPoint Materials, Inc.

发明人： Tadao Hashimoto ,  Edward Letts ,  Daryl Key

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/203 ,  C01G15/00 ,  C01C1/00 ,  H01L21/28

摘要： In one instance, the seed crystal of this invention provides a nitrogen-polar c-plane surface of a GaN layer supported by a metallic plate. The coefficient of thermal expansion of the metallic plate matches that of GaN layer. The GaN layer is bonded to the metallic plate with bonding metal. The bonding metal not only bonds the GaN layer to the metallic plate but also covers the entire surface of the metallic plate to prevent corrosion of the metallic plate and optionally spontaneous nucleation of GaN on the metallic plate during the bulk GaN growth in supercritical ammonia. The bonding metal is compatible with the corrosive environment of ammonothermal growth.

公开(公告)号：US10287709B2

公开(公告)日：2019-05-14

申请号：US15716491

申请日：2017-09-26

申请人： SixPoint Materials, Inc.

发明人： Tadao Hashimoto ,  Edward Letts ,  Daryl Key

IPC分类号： C30B23/02 ,  C30B29/40 ,  C30B7/10 ,  C30B23/04

摘要： In one instance, the seed crystal of this invention provides a nitrogen-polar c-plane surface of a GaN layer supported by a metallic plate. The coefficient of thermal expansion of the metallic plate matches that of GaN layer. The GaN layer is bonded to the metallic plate with bonding metal. The bonding metal not only bonds the GaN layer to the metallic plate but also covers the entire surface of the metallic plate to prevent corrosion of the metallic plate and optionally spontaneous nucleation of GaN on the metallic plate during the bulk GaN growth in supercritical ammonia. The bonding metal is compatible with the corrosive environment of ammonothermal growth.

公开(公告)号：US20190096667A1

公开(公告)日：2019-03-28

申请号：US15716499

申请日：2017-09-26

申请人： SixPoint Materials, Inc.

发明人： Tadao Hashimoto ,  Edward Letts ,  Daryl Key

IPC分类号： H01L21/02 ,  H01L21/203

CPC分类号： H01L21/02389 ,  C01B21/0632 ,  C01C1/00 ,  C01G15/00 ,  C30B25/00 ,  H01L21/2007 ,  H01L21/2036 ,  H01L21/28194

摘要： In one instance, the seed crystal of this invention provides a nitrogen-polar c-plane surface of a GaN layer supported by a metallic plate. The coefficient of thermal expansion of the metallic plate matches that of GaN layer. The GaN layer is bonded to the metallic plate with bonding metal. The bonding metal not only bonds the GaN layer to the metallic plate but also covers the entire surface of the metallic plate to prevent corrosion of the metallic plate and optionally spontaneous nucleation of GaN on the metallic plate during the bulk GaN growth in supercritical ammonia. The bonding metal is compatible with the corrosive environment of ammonothermal growth.

公开(公告)号：US10087548B2

公开(公告)日：2018-10-02

申请号：US14850948

申请日：2015-09-10

申请人： SIXPOINT MATERIALS, INC.

发明人： Tadao Hashimoto ,  Edward Letts ,  Masanori Ikari

IPC分类号： C30B25/02 ,  C30B7/10 ,  C30B29/40 ,  C30B35/00 ,  B32B15/01

摘要： Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel. Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.

公开(公告)号：US20160010238A1

公开(公告)日：2016-01-14

申请号：US14864839

申请日：2015-09-24

申请人： SIXPOINT MATERIALS, INC.

发明人： Tadao Hashimoto ,  Edward Letts ,  Masanori Ikari

IPC分类号： C30B7/10 ,  C30B29/40

CPC分类号： C30B7/105 ,  B32B15/01 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  C30B35/002 ,  Y10T428/12028

摘要： Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones.For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel.Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.

摘要翻译： 本发明公开了一种大尺寸的大型高压容器。 Ni-Cr基沉淀硬化型超合金。 船舶可能有多个区域。 例如，高压容器可以分为具有流量限制装置的至少三个区域，并且结晶区域设定为比其他区域更高的温度。 该结构有助于可靠地密封高压容器的两端，同时有助于大大减少容器底部的III族氮化物的不利沉淀。 本发明还公开了提高纯度，透明度和结构质量的晶体的新方法。 含碱金属的矿化剂以最低的氧气和湿度暴露于高压容器中充满氨。 介绍了几种在工艺步骤中减少氧气污染的方法。 公开了晶种的后蚀刻和新的温度梯度方案以改善结构质量。

公开(公告)号：US20160002817A1

公开(公告)日：2016-01-07

申请号：US14850948

申请日：2015-09-10

申请人： SIXPOINT MATERIALS, INC.

发明人： Tadao Hashimoto ,  Edward Letts ,  Masanori Ikari

IPC分类号： C30B7/10 ,  C30B29/40

CPC分类号： C30B7/105 ,  B32B15/01 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  C30B35/002 ,  Y10T428/12028

摘要： Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones.For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel.Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.

摘要翻译： 本发明公开了一种大尺寸的大型高压容器。 Ni-Cr基沉淀硬化型超合金。 船舶可能有多个区域。 例如，高压容器可以分为具有流量限制装置的至少三个区域，并且结晶区域设定为比其他区域更高的温度。 该结构有助于可靠地密封高压容器的两端，同时有助于大大减少容器底部的III族氮化物的不利沉淀。 本发明还公开了提高纯度，透明度和结构质量的晶体的新方法。 含碱金属的矿化剂以最低的氧气和湿度暴露于高压容器中充满氨。 介绍了在工艺步骤中减少氧气污染的几种方法。 公开了晶种的后蚀刻和新的温度梯度方案以改善结构质量。

公开(公告)号：US08557043B2

公开(公告)日：2013-10-15

申请号：US13728799

申请日：2012-12-27

申请人： SixPoint Materials, Inc.

发明人： Tadao Hashimoto ,  Masanori Ikari ,  Edward Letts

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： G01R31/2601 ,  C30B7/10 ,  C30B29/403 ,  H01L22/20 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control.