DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20240373678A1

    公开(公告)日:2024-11-07

    申请号:US18534848

    申请日:2023-12-11

    Abstract: A display device includes anode electrodes, an inorganic insulating layer exposing each anode electrode, a bank member on the inorganic insulating layer and including an opening overlapping each anode electrode, a light emitting layer on each anode electrode and including a portion on the inorganic insulating layer, and a cathode electrode on the light emitting layer and including a portion in contact with the bank member. The bank member includes a first bank layer, and a second bank layer on the first bank layer, including a metal material different from that of the first bank layer, and including a tip portion protruding than the first bank layer at a sidewall of the opening, and a lateral side of the inorganic insulating layer defining a pattern opening exposing each anode electrode and an end portion of the tip portion of the second bank layer are aligned to each other.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20240357871A1

    公开(公告)日:2024-10-24

    申请号:US18521142

    申请日:2023-11-28

    Abstract: A display device includes anode electrodes spaced apart, a bank structure surrounding the anode electrodes, and including openings, a capping layer on the anode electrode, electrically connected thereto, and having at least a portion spaced apart from the anode electrodes, an inorganic insulating layer on the capping layer within the openings and exposing a portion of an upper surface of the capping layer, light emitting layers each on the capping layer and having a portion contacting a side surface of the bank structure, cathode electrodes on the light emitting layers and having a portion contacting the side surface of the bank structure, and auxiliary common electrodes on the cathode electrodes and having a portion disposed on the bank structure. The bank structure includes first and second bank layers having different material, and the second includes a tip protruding more than the first bank layer.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20240334746A1

    公开(公告)日:2024-10-03

    申请号:US18515550

    申请日:2023-11-21

    CPC classification number: H10K59/122 H10K59/1201

    Abstract: A display device includes a transistor layer disposed on a substrate and including at least one transistor, an insulating layer disposed on the transistor layer, a first pixel electrode disposed on the insulating layer, a first pixel defining layer covering a side surface of the first pixel electrode and a side surface of the insulating layer and defining a first emission area, a first light emitting layer disposed in the first emission area on the first pixel electrode, a first common electrode disposed on the first light emitting layer, and a bank disposed on the insulating layer and surrounding the first pixel electrode. The first pixel electrode and the bank are disposed on a same layer and include a same material.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240049559A1

    公开(公告)日:2024-02-08

    申请号:US18125283

    申请日:2023-03-23

    CPC classification number: H10K59/80 H10K59/124 H10K59/1201

    Abstract: A display device and a method of manufacturing the same are provided. The display device includes: a base substrate, a barrier layer disposed on the base substrate, a first metal layer disposed on the barrier layer, a second metal layer disposed on the base substrate and spaced apart from the first metal layer, a buffer layer disposed on the first metal layer and the second metal layer, and a plurality of thin film transistors disposed on the buffer layer, where an angle between a side surface of the barrier layer and a bottom surface of the barrier layer is equal to or more than 90 degrees and less than or equal to 150 degrees.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230180523A1

    公开(公告)日:2023-06-08

    申请号:US17953098

    申请日:2022-09-26

    CPC classification number: H01L27/3262 H01L27/3234 H01L27/1225 H01L27/3218

    Abstract: Provided is a display device comprising a substrate including a first sub-display area and a main display area surrounding the first sub-display area, a first transistor disposed on the main display area without overlapping the first sub-display area, a via insulating layer to cover the first transistor, a first light emitting element to overlap the main display area without overlapping the first sub-display area, a second light emitting element to overlap the first sub-display area without overlapping the main display area, and a transparent oxide layer to overlap the first sub-display area without overlapping the main display area, wherein the transparent oxide layer includes a conductive portion and a non-conductive portion, the first light emitting element is disposed to overlap the first transistor while being connected thereto, and the second light emitting element is connected to the conductive portion of the transparent oxide layer.

    OLED DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    39.
    发明申请
    OLED DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    OLED显示装置及其制造方法

    公开(公告)号:US20160149161A1

    公开(公告)日:2016-05-26

    申请号:US14698265

    申请日:2015-04-28

    CPC classification number: H01L51/5271 H01L51/5265 H01L2251/301 H01L2251/558

    Abstract: An organic light-emitting diode (OLED) display device includes a substrate; a transistor device disposed on the substrate; a first electrode electrically connected to the transistor device; an organic light-emitting layer disposed on the first electrode; and a second electrode disposed on the organic light-emitting layer. The OLED display device further includes a transflective layer contacting a lower surface of the first electrode and having a relatively higher refractive index than the first electrode.

    Abstract translation: 有机发光二极管(OLED)显示装置包括:基板; 设置在所述基板上的晶体管器件; 电连接到所述晶体管器件的第一电极; 设置在所述第一电极上的有机发光层; 以及设置在有机发光层上的第二电极。 OLED显示装置还包括与第一电极的下表面接触且具有比第一电极相对更高的折射率的透反射层。

    THIN FILM TRANSISTOR ARRAY PANEL
    40.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL 有权
    薄膜晶体管阵列

    公开(公告)号:US20130320344A1

    公开(公告)日:2013-12-05

    申请号:US13691307

    申请日:2012-11-30

    CPC classification number: H01L29/78693 H01L29/458 H01L29/4908 H01L29/7869

    Abstract: A thin film transistor array panel includes: a semiconductor layer disposed on an insulation substrate; a gate electrode overlapping the semiconductor layer; a source electrode and a drain electrode overlapping the semiconductor layer; a first barrier layer disposed between the source electrode and the semiconductor layer; and a second barrier layer disposed between the drain electrode and the semiconductor layer, wherein the first barrier layer and the second barrier layer include nickel-chromium (NiCr).

    Abstract translation: 薄膜晶体管阵列面板包括:设置在绝缘基板上的半导体层; 与半导体层重叠的栅电极; 与该半导体层重叠的源电极和漏电极; 设置在所述源电极和所述半导体层之间的第一阻挡层; 以及设置在所述漏电极和所述半导体层之间的第二阻挡层,其中所述第一阻挡层和所述第二阻挡层包括镍 - 铬(NiCr)。

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