公开(公告)号：US20220336527A1

公开(公告)日：2022-10-20

申请号：US17641412

申请日：2020-02-27

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Rae CHA ,  Dong Uk KIM ,  Myeong Hee KIM ,  Se Young KIM ,  Hyun Min CHO

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44

Abstract: A light emitting device includes: a first semiconductor layer that is doped with a first polarity dopant, and that includes a first part extending in a first direction and a second part connected to one side of the first part; a second semiconductor layer doped with second polarity dopant that differs from the first polarity dopant; an active layer between the first semiconductor layer and the second semiconductor layer; and an insulation film around at least the outer surface of the active layer and extends in the first direction, wherein the diameter of the second part measured in a second direction perpendicular to the first direction is larger than the diameter of the first part measured in the second direction, and the side surface of the second part is inclined.

公开(公告)号：US20220254959A1

公开(公告)日：2022-08-11

申请号：US17626019

申请日：2020-06-03

Applicant: Samsung Display Co., LTD.

Inventor： Seung Geun LEE ,  Dong Uk KIM ,  Dae Hyun KIM ,  Se Young KIM ,  Hyun Min CHO ,  Hyung Rae CHA

IPC: H01L33/38 ,  H01L33/00 ,  H01L27/15

Abstract: A light emitting element having a shape extending in a direction includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and second semiconductor layers, a first electrode layer on a second surface opposite to a first surface of the first semiconductor layer facing the active layer, a second electrode layer on a second surface opposite to a first surface of the second semiconductor layer facing the active layer, and an insulating film surrounding a side surface of the active layer, a side surface of the first electrode layer, and a side surface of the second electrode layer, wherein a first area including the insulating film adjacent to a side surface of the active layer has a thickness larger than a thickness of a second area including the insulating film adjacent to a side surface of the first electrode layer.

公开(公告)号：US20220109083A1

公开(公告)日：2022-04-07

申请号：US17320925

申请日：2021-05-14

Applicant: Samsung Display Co., LTD.

Inventor： Chang Hee LEE ,  Dong Uk KIM ,  Se Hun KIM ,  Hyo Jin KO ,  Dong Hoon KWAK ,  Young Il KIM ,  Ji Yoon KIM

IPC: H01L33/20 ,  H01L33/38 ,  H01L27/15 ,  H01L33/00

Abstract: A light emitting element includes a first surface corresponding to an end of the light emitting element, a second surface corresponding to another end of the light emitting element, a first semiconductor layer adjacent to the first surface, the first semiconductor layer including a first type of semiconductor, a second semiconductor layer adjacent to the second surface, the second semiconductor layer including a second type of semiconductor different from the first type of semiconductor, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. An area of the first surface is larger than an area of the second surface, and a distance between the first surface and the second surface is shorter than a length defined by the first surface.

公开(公告)号：US20220068892A1

公开(公告)日：2022-03-03

申请号：US17244397

申请日：2021-04-29

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Rae CHA ,  Dong Uk KIM ,  Sung Ae JANG ,  Ji Hyun HAM

IPC: H01L25/075 ,  H01L27/12 ,  H01L33/00 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

公开(公告)号：US20210343894A1

公开(公告)日：2021-11-04

申请号：US17377266

申请日：2021-07-15

Applicant: Samsung Display Co. Ltd.

Inventor： Jung Hong MIN ,  Dae Hyun KIM ,  Hyun Min CHO ,  Jong Hyuk KANG ,  Dong Uk KIM ,  Seung A LEE ,  Hyun Deok IM ,  Hyung Rae CHA

IPC: H01L33/00 ,  H01L33/30

Abstract: Provided is a method of manufacturing a light-emitting element, the method including positioning a substrate, forming a first separation layer, which includes a first sacrificial layer, an etching control layer on the first sacrificial layer, and a second sacrificial layer on the etching control layer, on the substrate, forming at least one first light-emitting element on the first separation layer, and separating the first light-emitting element from the substrate.

公开(公告)号：US20210320231A1

公开(公告)日：2021-10-14

申请号：US17263871

申请日：2019-01-30

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Uk KIM ,  Je Won YOO ,  Hyun Min CHO ,  Jung Hong MIN

IPC: H01L33/50 ,  H01L25/16

Abstract: A light emitting device may include: a substrate; a light emitting element located on the substrate and configured to emit light; a first electrode and a second electrode spaced from each other with the light emitting element interposed therebetween; a color conversion layer located on the substrate and configured to convert light emitted from the light emitting element into light having a specific color; a first contact electrode configured to electrically couple the first electrode with a first end of the light emitting element; and a second contact electrode configured to electrically couple the second electrode with a second end of the light emitting element. In a plan view, the color conversion layer may be spaced from the light emitting element and overlaps with at least one of the first and the second contact electrodes.

公开(公告)号：US20210091255A1

公开(公告)日：2021-03-25

申请号：US17110574

申请日：2020-12-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung Hong MIN ,  Dae Hyun KIM ,  Seung A LEE ,  Hyun Min CHO ,  Jong Hyuk KANG ,  Dong Uk KIM ,  Hyun Deok IM ,  Hyung Rae CHA

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/32 ,  H01L21/302

Abstract: A light emitting element, a method of manufacturing a light emitting element, and a display device including a light emitting element are provided. A method of manufacturing a light emitting element includes: preparing a lower panel including a substrate and a first sub conductive semiconductor layer on the substrate; forming a first mask layer including at least one mask pattern on at least a part of the lower panel to be spaced apart from each other and an opening region in which the mask patterns are spaced apart from each other; laminating a first conductive semiconductor layer, an active material layer, and a second conductive semiconductor layer on the first mask layer to form an element laminate; etching the element laminate in a vertical direction to form an element rod; and removing the mask pattern to separate the element rod from the lower panel.

公开(公告)号：US20210043699A1

公开(公告)日：2021-02-11

申请号：US17077902

申请日：2020-10-22

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Uk KIM

IPC: H01L27/32 ,  H01L51/52

Abstract: A display device includes: a substrate including a display region and a non-display region; a plurality of pixels provided in the display region, the plurality of pixels including first to third sub-pixels each having a light emitting region configured to light; a first light emitting element that is provided in each of the first and second sub-pixels and emits first color light, and a second light emitting element that is provided in the third sub-pixel and emits second color light; and a color conversion layer corresponding to each of the first and second sub-pixels, the color conversion layer converting the first color light into light of a set color for each corresponding sub-pixel.

公开(公告)号：US20190378953A1

公开(公告)日：2019-12-12

申请号：US16274109

申请日：2019-02-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung Hong MIN ,  Dae Hyun KIM ,  Seung A LEE ,  Hyun Min CHO ,  Jong Hyuk KANG ,  Dong Uk KIM ,  Hyun Deok IM ,  Hyung Rae CHA

IPC: H01L33/00 ,  H01L33/32 ,  H01L27/15

Abstract: A light emitting element, a method of manufacturing a light emitting element, and a display device including a light emitting element are provided. A method of manufacturing a light emitting element includes: preparing a lower panel including a substrate and a first sub conductive semiconductor layer on the substrate; forming a first mask layer including at least one mask pattern on at least a part of the lower panel to be spaced apart from each other and an opening region in which the mask patterns are spaced apart from each other; laminating a first conductive semiconductor layer, an active material layer, and a second conductive semiconductor layer on the first mask layer to form an element laminate; etching the element laminate in a vertical direction to form an element rod; and removing the mask pattern to separate the element rod from the lower panel.

公开(公告)号：US20240222554A1

公开(公告)日：2024-07-04

申请号：US18517315

申请日：2023-11-22

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Rae CHA ,  Hoo Keun PARK ,  Dong Uk KIM

IPC: H01L33/24 ,  H01L33/10 ,  H01L33/38

CPC classification number: H01L33/24 ,  H01L33/10 ,  H01L33/38

Abstract: A light emitting element includes a first semiconductor layer, a second semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a first insulating layer surrounding the first semiconductor layer, the second semiconductor layer, and the active layer, and a first thickness of the first insulating layer surrounding the first semiconductor layer is different from a second thickness of the first insulating layer surrounding the second semiconductor layer.