公开(公告)号：US10727349B2

公开(公告)日：2020-07-28

申请号：US16426819

申请日：2019-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Soo Kim ,  Dong Hyun Roh ,  Koung Min Ryu ,  Sang Jin Hyun

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L29/423 ,  H01L27/092 ,  H01L27/12

Abstract: A semiconductor device includes an active fin on a substrate, a device isolation film covering a lower portion of the active fin, a gate structure covering the active fin and the device isolation film, and a gate spacer on a side wall of the gate structure, wherein a side wall of the gate structure disposed on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate structure to a bottom of the gate structure, and an inner side wall of the gate spacer on the device isolation film is inclined at a uniform inclination from a point higher than a half of a height of the gate spacer to a bottom of the gate spacer while forming an acute angle with a bottom surface of the gate spacer.

公开(公告)号：US10438800B2

公开(公告)日：2019-10-08

申请号：US15825135

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon Tae Hwang ,  Moon Kyun Song ,  Nam Gyu Cho ,  Kyu Min Lee ,  Soo Jung Choi ,  Yong Ho Ha ,  Sang Jin Hyun

IPC: H01L21/28 ,  H01L29/51 ,  H01L21/02 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/786 ,  H01L29/78

Abstract: Semiconductor devices and methods for fabricating the same are provided. A semiconductor device may include a substrate including first and second regions, a first interface film disposed on the substrate in the first region, a second interface film disposed on the substrate in the second region, a dielectric film disposed on the first and second interface films, a first metal film disposed on the dielectric film in the first region, and a second metal film disposed on the dielectric film in the second region. The first and second interface films may comprise an oxide of the substrate, the first and second metal films may comprise different materials, and the first and second interface films may have different thicknesses. Channels may be provided in the first and second regions, and the channels may be fin-shaped or wire-shaped. The metal films may have different oxygen content.

公开(公告)号：US20190292664A1

公开(公告)日：2019-09-26

申请号：US16190558

申请日：2018-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heon Bok Lee ,  Dae Yong Kim ,  Dong Woo Kim ,  Jun Ki Park ,  Sang Yub Ie ,  Sang Jin Hyun

IPC: C23C16/455 ,  H01L21/285

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.

公开(公告)号：US10340358B2

公开(公告)日：2019-07-02

申请号：US15951639

申请日：2018-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung In Suh ,  Hoon Joo Na ,  Min Woo Song ,  Byoung Hoon Lee ,  Chan Hyeong Lee ,  Hu Yong Lee ,  Sang Jin Hyun

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L21/285

Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from the first barrier film.

公开(公告)号：US20190081152A1

公开(公告)日：2019-03-14

申请号：US15951639

申请日：2018-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung In Suh ,  Hoon Joo Na ,  Min Woo Song ,  Byoung Hoon Lee ,  Chan Hyeong Lee ,  Hu Yong Lee ,  Sang Jin Hyun

IPC: H01L29/49 ,  H01L21/28 ,  H01L21/02 ,  H01L21/285 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/4966 ,  H01L21/02164 ,  H01L21/28088 ,  H01L21/28167 ,  H01L21/28518 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/785

Abstract: A semiconductor device and method for fabricating the same are provided. The semiconductor device includes a substrate, a first active pattern disposed on the substrate and spaced apart from the substrate, a gate insulating film which surrounds the first active pattern, a first work function adjustment film which surrounds the gate insulating film and includes carbon, and a first barrier film which surrounds the first work function adjustment film, in which a carbon concentration of the first work function adjustment film increases as it goes away from. the first barrier film.