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    SEMICONDUCTOR DEVICE
    31.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220231168A1

    公开(公告)日：2022-07-21

    申请号：US17657761

    申请日：2022-04-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyo Jin KIM ,  Dong Woo KIM ,  Sang Moon LEE ,  Seung Hun LEE

    IPC: H01L29/78 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/786 ,  H01L27/092

    Abstract: A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction.

    SEMICONDUCTOR DEPOSITION MONITORING DEVICE
    33.
    发明申请
    SEMICONDUCTOR DEPOSITION MONITORING DEVICE 有权

    公开(公告)号：US20210388501A1

    公开(公告)日：2021-12-16

    申请号：US17155672

    申请日：2021-01-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young Uk CHOI ,  Yeon Tae KIM ,  Tae Soon PARK ,  Kee Soo PARK ,  Sung-Gyu PARK ,  Kwang-Hyun YANG ,  Seung Hun LEE

    IPC: C23C16/52 ,  C23C16/455 ,  C23C16/44 ,  H01L21/203

    Abstract: The present disclosure provides a semiconductor deposition monitoring device comprising a supporting table, a chamber, a lamp, an optical sensor, a conduit, a plurality of sensors in the conduit, and a heat exchanger. The supporting table supports a deposition target wafer on which a deposition material is deposited. The chamber comprises an upper dome and a lower dome. The lamp emits light to the chamber. The optical sensor receives the irradiated light and measures the deposition material formed in the chamber. The conduit has an inlet conduit through which air is injected into the chamber and an outlet conduit through which the air is discharged from the chamber. The plurality of sensors sense information of the air. The sensed information may be used to control the heat exchanger.

    SEMICONDUCTOR DEVICE
    35.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210159246A1

    公开(公告)日：2021-05-27

    申请号：US17144458

    申请日：2021-01-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Namkyu Edward CHO ,  Seok Hoon KIM ,  Myung Il KANG ,  Geo Myung SHIN ,  Seung Hun LEE ,  Jeong Yun LEE ,  Min Hee CHOI ,  Jeong Min CHOI

    IPC: H01L27/11582 ,  H01L29/66 ,  H01L21/768 ,  H01L29/78

    Abstract: A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.

    SEMICONDUCTOR DEVICE
    36.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210118880A1

    公开(公告)日：2021-04-22

    申请号：US16896423

    申请日：2020-06-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyojin KIM ,  Jihye LEE ,  Sangmoon LEE ,  Seung Hun LEE

    IPC: H01L27/092 ,  H01L29/161

    Abstract: A semiconductor device including a substrate; a first active pattern on the substrate and extending in a first direction, an upper portion of the first active pattern including a first channel pattern; first source/drain patterns in recesses in an upper portion of the first channel pattern; and a gate electrode on the first active pattern and extending in a second direction crossing the first direction, the gate electrode being on a top surface and on a side surface of the at least one first channel pattern, wherein each of the first source/drain patterns includes a first, second, and third semiconductor layer, which are sequentially provided in the recesses, each of the first channel pattern and the third semiconductor layers includes silicon-germanium (SiGe), and the first semiconductor layer has a germanium concentration higher than those of the first channel pattern and the second semiconductor layer.

    SEMICONDUCTOR DEVICE
    37.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200075764A1

    公开(公告)日：2020-03-05

    申请号：US16412796

    申请日：2019-05-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sunguk JANG ,  Sujin JUNG ,  Jinyeong JOE ,  Jeongho YOO ,  Seung Hun LEE ,  Jongryeol YOO

    IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L27/088

    Abstract: A semiconductor device includes a first active fin protruding from a substrate, a first gate pattern covering a side surface and a top surface of the first active fin, and first source/drain patterns at opposite sides of the first gate pattern, each of the first source/drain patterns including a first lower side and a second lower side spaced apart from each other, a first upper side extended from the first lower side, a second upper side extended from the second lower side. The first lower side may be inclined at a first angle relative to a top surface of the substrate, the second upper side may be inclined at a second angle relative to the top surface of the substrate, and the first angle may be greater than the second angle.

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