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公开(公告)号：US20220149210A1
公开(公告)日：2022-05-12
申请号：US17584545
申请日：2022-01-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seung Mo KANG , Moon Seung YANG , Jongryeol YOO , Sihyung LEE , Sunguk JANG , Eunhye CHOI
IPC: H01L29/786 , H01L29/08 , H01L29/423 , H01L29/06 , H01L29/66 , H01L29/78 , H01L27/088 , H01L21/8234 , H01L21/311
Abstract: A semiconductor device includes a channel pattern including first and second semiconductor patterns stacked on a substrate, a gate electrode covering top and lateral surfaces of the channel pattern and extending in a first direction, and including a first gate segment between the first semiconductor pattern and the second semiconductor pattern, a gate spacer covering a lateral surface of the gate electrode and including an opening exposing the channel pattern, and a first source/drain pattern on a side of the gate spacer and in contact with the channel pattern through the opening, the first source/drain pattern including a sidewall center thickness at a height of the first gate segment and at a center of the opening, and a sidewall edge thickness at the height of the first gate segment and at an edge of the opening, the sidewall edge thickness being about 0.7 to 1 times the sidewall center thickness.
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公开(公告)号：US20220198621A1
公开(公告)日：2022-06-23
申请号：US17690853
申请日：2022-03-09
Inventor： Sihyung LEE , Dongjae KIM , Jae Wook NAM , Wooram HONG
Abstract: A method for correcting an image includes: orthographically correcting an image; removing a curtain artifact by applying a first filter to the orthographically corrected image; correcting brightness of the image, from which the curtain artifact is removed, by applying a second filter to the image, from which the curtain artifact is removed. The first filter includes a first function and a second function for a first domain and a second domain, which are orthogonal to each other in a frequency region, and the first filter is differentiable and continuous in the first domain and the second domain.
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公开(公告)号：US20230387207A1
公开(公告)日：2023-11-30
申请号：US18155532
申请日：2023-01-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Juri LEE , Taegon KIM , Seungmo KANG , Sihyung LEE
IPC: H01L29/08 , H01L29/16 , H01L29/417 , H01L27/088 , H01L29/66 , H01L29/775 , H01L21/265
CPC classification number: H01L29/0847 , H01L29/16 , H01L29/41733 , H01L27/088 , H01L29/66439 , H01L29/66742 , H01L29/775 , H01L21/26506 , H01L29/0673
Abstract: An integrated circuit (IC) device includes a fin-type active region extending long in a first lateral direction on a substrate, a channel region on the fin-type active region, a gate line surrounding the channel region, and a source/drain region adjacent to the gate line on the fin-type active region, the source/drain region. The source/drain region includes a lower source/drain region and an upper source/drain region. The lower source/drain region includes at least one silicon isotope selected from silicon isotopes of 28Si, 29Si, and 30Si, and the upper source/drain region includes a 28Si element at a content higher than a content of the 28Si element in the lower source/drain region.
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公开(公告)号：US20210408241A1
公开(公告)日：2021-12-30
申请号：US17471244
申请日：2021-09-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seojin JEONG , Jinyeong JOE , Seokhoon KIM , Jeongho YOO , Seung Hun LEE , Sihyung LEE
IPC: H01L29/16 , H01L29/10 , H01L29/04 , H01L29/167 , H01L29/36 , H01L27/092 , H01L29/06 , H01L21/8238 , H01L21/762 , H01L29/66 , H01L29/08
Abstract: A semiconductor device includes a substrate, a device isolation layer on the substrate, the device isolation layer defining a first active pattern, a pair of first source/drain patterns on the first active pattern, the pair of first source/drain patterns being spaced apart from each other in a first direction, and each of the pair of first source/drain patterns having a maximum first width in the first direction, a first channel pattern between the pair of first source/drain patterns, a gate electrode on the first channel pattern and extends in a second direction intersecting the first direction, and a first amorphous region in the first active pattern, the first amorphous region being below at least one of the pair of first source/drain patterns, and having a maximum second width in the first direction that is less than the maximum first width.
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Patent Agency Ranking
公开(公告)号：US20210321166A1
公开(公告)日：2021-10-14
申请号：US17261364
申请日：2019-07-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Gohwoon JEONG , Sihyung LEE , Hwanchul KIM , Seokmin OH , Jungkun LEE , Daeeun HYUN
IPC: H04N21/4722 , G06F16/732 , G06F16/532 , G06N3/08 , H04N21/41 , H04N21/44
Abstract: An apparatus includes a display; a communicator; a processor; and a memory, the memory storing instructions to: obtain a plurality of images relevant to media content displayed on the display, which are stored for a period of time when an object identifying command requesting identification of an object contained in the media content is received. The command is received from a different electronic apparatus through the communicator. The processor obtains a candidate image containing the object being displayed, by identifying objects contained in the plurality of images, and transmits the candidate image to the different electronic apparatus via the communicator. The apparatus may use an AI data recognition model learned based on a rule-based model or machine learning, a neural network or a deep-learning algorithm. The rule-based model or the AI data recognition model may identify an object contained in an image by regarding the image as an input.
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公开(公告)号：US20210049745A1
公开(公告)日：2021-02-18
申请号：US17084352
申请日：2020-10-29
Inventor： Sihyung LEE , Dongjae KIM , Jae Wook NAM , Wooram HONG
Abstract: A method for correcting an image includes: orthographically correcting an image; removing a curtain artifact by applying a first filter to the orthographically corrected image; correcting brightness of the image, from which the curtain artifact is removed, by applying a second filter to the image, from which the curtain artifact is removed. The first filter includes a first function and a second function for a first domain and a second domain, which are orthogonal to each other in a frequency region, and the first filter is differentiable and continuous in the first domain and the second domain.
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公开(公告)号：US20240096953A1
公开(公告)日：2024-03-21
申请号：US18199115
申请日：2023-05-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Juri LEE , Taegon KIM , Sun-Ryung OH , Sihyung LEE
IPC: H01L29/06 , H01L27/092 , H01L29/423 , H01L29/775 , H01L29/786
CPC classification number: H01L29/0673 , H01L27/0924 , H01L29/42392 , H01L29/775 , H01L29/78696
Abstract: An integrated circuit (IC) device is provided. The IC device includes: a channel region on a substrate; a gate on the channel region; a first gate dielectric film including a first portion and a second portion, the first portion being in contact with the channel region between the channel region and the gate, and the second portion being apart from the channel region; and a second gate dielectric film including a third portion, the third portion being in contact with the second portion of the first gate dielectric film at a vertical level farther from the substrate than a top surface of the gate.
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公开(公告)号：US20200381564A1
公开(公告)日：2020-12-03
申请号：US16774653
申请日：2020-01-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seung Mo KANG , Moon Seung YANG , Jongryeol YOO , Sihyung LEE , Sunguk JANG , Eunhye CHOI
IPC: H01L29/786 , H01L29/423 , H01L29/08
Abstract: A semiconductor device includes a channel pattern including first and second semiconductor patterns stacked on a substrate, a gate electrode covering top and lateral surfaces of the channel pattern and extending in a first direction, and including a first gate segment between the first semiconductor pattern and the second semiconductor pattern, a gate spacer covering a lateral surface of the gate electrode and including an opening exposing the channel pattern, and a first source/drain pattern on a side of the gate spacer and in contact with the channel pattern through the opening, the first source/drain pattern including a sidewall center thickness at a height of the first gate segment and at a center of the opening, and a sidewall edge thickness at the height of the first gate segment and at an edge of the opening, the sidewall edge thickness being about 0.7 to 1 times the sidewall center thickness.
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公开(公告)号：US20180247394A1
公开(公告)日：2018-08-30
申请号：US15902666
申请日：2018-02-22
Inventor： Sihyung LEE , Dongjae KIM , Jae Wook NAM , Wooram HONG
CPC classification number: G06T5/006 , G06T5/008 , G06T5/20 , G06T5/40 , G06T2207/10061 , G06T2207/20056 , G06T2207/30164 , H04N5/235
Abstract: A method for correcting an image includes: orthographically correcting an image; removing a curtain artifact by applying a first filter to the orthographically corrected image; correcting brightness of the image, from which the curtain artifact is removed, by applying a second filter to the image, from which the curtain artifact is removed. The first filter includes a first function and a second function for a first domain and a second domain, which are orthogonal to each other in a frequency region, and the first filter is differentiable and continuous in the first domain and the second domain.
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