公开(公告)号：US12146086B2

公开(公告)日：2024-11-19

申请号：US18310830

申请日：2023-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Eun Joo Jang

IPC: C09K11/02 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/62 ,  C09K11/88 ,  G02F1/1335 ,  G02F1/13357 ,  H10K50/115

Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same. The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

公开(公告)号：US11999887B2

公开(公告)日：2024-06-04

申请号：US18182428

申请日：2023-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Sungwoo Hwang ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Soo Kyung Kwon ,  Seon-Yeong Kim

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  C01B19/00 ,  C01G9/08 ,  C09K11/56 ,  F21V8/00 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38

CPC classification number: C09K11/883 ,  C01B19/00 ,  C01G9/08 ,  C09K11/565 ,  H10K50/115 ,  H10K59/12 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2002/74 ,  C01P2006/60 ,  G02B6/005

Abstract: A core shell quantum dot including a core including a first semiconductor nanocrystal and including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core and including a zinc chalcogenide, a method of manufacture thereof, and a device including the same are disclosed, wherein the core shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein in an X-ray photoelectron spectrum of the quantum dot, a peak area for Te oxide to a peak area for Te3d5/2 as an area percentage is less than or equal to about 25%.

公开(公告)号：US11987739B2

公开(公告)日：2024-05-21

申请号：US18318053

申请日：2023-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong Kim ,  Soo Kyung Kwon ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Jihyun Min ,  Sungwoo Hwang ,  Eun Joo Jang

IPC: C09K11/88 ,  C01G9/00 ,  C01G9/08 ,  C09K11/06 ,  C09K11/54 ,  C09K11/56 ,  G02F1/13357 ,  H10K59/38 ,  F21V8/00 ,  G02F1/1335

CPC classification number: C09K11/883 ,  C01G9/006 ,  C01G9/08 ,  C09K11/06 ,  C09K11/54 ,  C09K11/565 ,  G02F1/133621 ,  H10K59/38 ,  C01P2004/64 ,  C01P2004/90 ,  C01P2006/60 ,  G02B6/005 ,  G02F1/133614 ,  G02F2202/36

Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.

公开(公告)号：US11739263B2

公开(公告)日：2023-08-29

申请号：US16851520

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Ji-Yeong Kim

IPC: C09K11/88 ,  C09K11/02 ,  F21V8/00 ,  G02F1/13357 ,  H01L27/32 ,  C09K11/08 ,  C09K11/56 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/025 ,  C09K11/0805 ,  C09K11/562 ,  C09K11/88 ,  G02B6/005 ,  G02F1/133617 ,  H01L27/322 ,  H01L27/3244 ,  B82Y20/00 ,  B82Y40/00

Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

公开(公告)号：US11674078B2

公开(公告)日：2023-06-13

申请号：US17401410

申请日：2021-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Eun Joo Jang

IPC: C09K11/02 ,  C09K11/62 ,  H10K50/115 ,  G02F1/13357 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/1335 ,  H01L51/50

CPC classification number: C09K11/025 ,  C09K11/623 ,  G02F1/133615 ,  G02F1/133617 ,  H01L51/502 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/133614 ,  G02F2202/36

Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same.
The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

公开(公告)号：US11355583B2

公开(公告)日：2022-06-07

申请号：US15659758

申请日：2017-07-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yongwook Kim ,  Eun Joo Jang ,  Jihyun Min

IPC: H01L29/06 ,  C09K11/02 ,  C09K11/70 ,  H01L33/18 ,  B82Y10/00 ,  B82Y40/00

Abstract: A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn2+, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn2+, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.

公开(公告)号：US11091690B2

公开(公告)日：2021-08-17

申请号：US16431772

申请日：2019-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo Kyung Kwon ,  Yong Wook Kim ,  Jihyun Min ,  Eun Joo Jang

IPC: C09K11/02 ,  C09K11/62 ,  H01L51/50 ,  G02F1/13357 ,  B82Y20/00 ,  B82Y40/00 ,  G02F1/1335

Abstract: A quantum dot including a core including a quaternary alloy semiconductor nanocrystal and not including cadmium, a composition and a quantum dot polymer composite including the same, and an electronic device including the same.
The quaternary alloy semiconductor nanocrystal comprises indium (In), phosphorous (P), zinc (Zn), and selenium (Se), and in the core, a ratio of the zinc with respect to the indium is less than or equal to about 0.5:1 and in the core, a ratio of selenium with respect to zinc is less than or equal to about 0.6:1.

公开(公告)号：US10711193B2

公开(公告)日：2020-07-14

申请号：US16205323

申请日：2018-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongwook Kim ,  Sungwoo Hwang ,  Soo Kyung Kwon ,  Yuho Won ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/02 ,  H01L51/50 ,  H01L27/32 ,  B82Y40/00 ,  B82Y20/00 ,  G02F1/133

Abstract: A quantum dot, a method of producing the same, a quantum dot polymer composite including the same, and an electronic device. The quantum dot includes a core including a first semiconductor nanocrystal and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a metal dopant, wherein the first semiconductor nanocrystal includes a Group II-VI compound, a Group III-V compound, or a combination thereof, the second semiconductor nanocrystal includes a Group II-VI compound, and the metal dopant includes hafnium, zirconium, titanium, or a combination thereof.

公开(公告)号：US09181471B2

公开(公告)日：2015-11-10

申请号：US14059594

申请日：2013-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun A Kang ,  Oul Cho ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Soo Kyung Kwon ,  Won Joo Lee

IPC: H01J1/62 ,  C09K11/02 ,  C09K11/88 ,  H01L33/50

CPC classification number: C09K11/02 ,  C09K11/883 ,  H01L33/501 ,  H01L33/502 ,  H01L2224/48091 ,  Y02B20/181 ,  H01L2924/00014

Abstract: A light emitting device including: a blue light source; a phosphor; and a semiconductor nanocrystal, and emits white light having a R1-R8 average color rendering index (“CRI”) of greater than or equal to about 90, and a R9 red color rendering index (R9) of greater than or equal to about 90.

Abstract translation: 一种发光器件，包括：蓝色光源; 磷光体 和半导体纳米晶体，并且发射具有大于或等于约90的R1-R8平均显色指数（“CRI”）的白光和大于或等于约90的R9红色显色指数（R9） 。