公开(公告)号：US20210118980A1

公开(公告)日：2021-04-22

申请号：US16853195

申请日：2020-04-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeoncheol PARK ,  Chan KWAK ,  Euncheol DO ,  Giyoung JO

IPC: H01L49/02 ,  H01G4/12 ,  H01G4/30 ,  H01G4/012 ,  H01L27/108 ,  C01G35/00

Abstract: Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric. (RbxA1-x)(ByTa1-y)O3-δ   In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1≤x≤0.2, 0≤y≤0.2, and 0≤δ≤0.5 are satisfied.

公开(公告)号：US20200333827A1

公开(公告)日：2020-10-22

申请号：US16917912

申请日：2020-07-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan KWAK ,  Jae-Young CHOI ,  Kwang Hee KIM ,  Jong Wook ROH ,  Hyeon Cheol PARK ,  Weon Ho SHIN ,  Yun Sung WOO ,  Hyosug LEE ,  Jinyoung HWANG

IPC: G06F1/16 ,  G06F3/044 ,  G06F3/041 ,  H05K1/02 ,  H05K1/09

Abstract: An electrode structure includes: a first nonconductive layer; a first conductive layer disposed on the first nonconductive layer; a second nonconductive layer disposed on the first conductive layer; a second conductive layer disposed on the second nonconductive layer; and a third nonconductive layer disposed on the second conductive layer, where at least one of the first conductive layer and the second conductive layer includes a two-dimensional conductive material.

公开(公告)号：US20200266264A1

公开(公告)日：2020-08-20

申请号：US16541883

申请日：2019-08-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungjun KIM ,  Doh Won JUNG ,  Chan KWAK ,  Ki Hong KIM ,  Daejin YANG ,  Chang Soo LEE

IPC: H01L49/02

Abstract: A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.

公开(公告)号：US20200172445A1

公开(公告)日：2020-06-04

申请号：US16391767

申请日：2019-04-23

Applicant: Samsung Electronics Co. Ltd.

Inventor： Giyoung JO ,  Chan KWAK ,  Taewon JEONG

IPC: C04B35/64 ,  C04B41/87 ,  C04B35/48

Abstract: A sintering jig according to the disclosure includes a first plate including a plurality of protrusions and a second plate stacked on the first plate and including through holes corresponding to the protrusions. The through hole includes a cylindrical portion through which the protrusion enter and exit and a conical portion widening towards an upper surface of the second plate from the cylindrical portion.

公开(公告)号：US20190279817A1

公开(公告)日：2019-09-12

申请号：US16297883

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon Cheol PARK ,  Chan KWAK ,  Kyoung-Seok MOON ,  Daejin YANG ,  Tae Won JEONG

IPC: H01G4/12 ,  H01G4/30 ,  H01G4/012 ,  C04B35/468 ,  H01L41/43 ,  H01L41/187 ,  H01C7/02 ,  H01F27/00

Abstract: A ceramic dielectric including: a bulk dielectric including barium (Ba) and titanium (Ti); a ceramic nanosheet; and a composite dielectric of the bulk dielectric and the ceramic nanosheet.

公开(公告)号：US20190131077A1

公开(公告)日：2019-05-02

申请号：US16164869

申请日：2018-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yoon Chul SON ,  Minoru OSADA ,  Takayoshi SASAKI ,  Chan KWAK ,  Doh Won JUNG ,  Youngjin CHO

IPC: H01G4/33 ,  H01G4/12 ,  H01G4/012 ,  H01G4/248

Abstract: A method of manufacturing a ceramic electronic component includes forming a dielectric layer including a plurality of ceramic nanosheets on a first electrode, treating the dielectric layer with an acid, and forming a second electrode on the dielectric layer, a ceramic electronic component, and an electronic device.

公开(公告)号：US20170273181A1

公开(公告)日：2017-09-21

申请号：US15240132

申请日：2016-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hiesang SOHN ,  Chan KWAK ,  Mi Jeong KIM ,  Hyeon Cheol PARK ,  Weonho SHIN ,  Youngjin CHO

IPC: H05K1/09 ,  C01B31/04 ,  H05K3/22 ,  H05K1/03 ,  H05K3/14

CPC classification number: H05K1/09 ,  C01B31/0484 ,  C01B32/184 ,  H05K1/0306 ,  H05K1/0313 ,  H05K3/146 ,  H05K3/22 ,  H05K2201/0145 ,  H05K2201/0154 ,  H05K2201/0158 ,  H05K2201/0323 ,  H05K2201/0338 ,  H05K2203/0783 ,  Y02E10/50

Abstract: A conductor includes a substrate, a first conductive layer disposed on the substrate and including two or more islands including graphene, and a second conductive layer disposed on the first conductive layer and including a conductive metal nanowire, wherein at least one of an upper surface and a lower surface of the islands including graphene includes a P-type dopant.

公开(公告)号：US20170133469A1

公开(公告)日：2017-05-11

申请号：US15236564

申请日：2016-08-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun Sung WOO ,  Hiesang SOHN ,  Weonho SHIN ,  Eun-Hyoung CHO ,  Chan KWAK ,  Hyeon Cheol PARK ,  Youngjin CHO ,  Dong-Su KO ,  Woong KO ,  Kwanghee KIM

IPC: H01L29/16 ,  H01L29/167

CPC classification number: H01L29/1606 ,  H01L29/167 ,  H01L29/41 ,  H01L29/413 ,  H01L29/43 ,  H01L29/45 ,  H01L31/022466 ,  H01L33/42

Abstract: A transparent electrode including: a substrate; a first layer disposed on the substrate, the first layer including a graphene mesh structure, the graphene mesh structure including graphene and a plurality of holes; and a second layer disposed on the first layer, wherein the second layer includes a plurality of conductive nanowires.

公开(公告)号：US20170125136A1

公开(公告)日：2017-05-04

申请号：US15343541

申请日：2016-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon Cheol PARK ,  Youngjin CHO ,  Daejin YANG ,  Chan KWAK ,  Kwanghee KIM ,  Weonho SHIN ,  Yun Sung WOO

IPC: H01B1/22 ,  H01L31/0224 ,  H01L29/43 ,  H01B3/44

CPC classification number: H01B1/22 ,  G06F3/041 ,  G06F2203/04103 ,  H01B3/447 ,  H01L29/43 ,  H01L31/022466 ,  H01L51/0021 ,  H01L51/003 ,  H01L51/0045 ,  H01L51/0097 ,  H01L51/442

Abstract: A transparent electrode including: a first layer including a thermosetting copolymer including a first repeating unit having an aromatic moiety as a pendant group or incorporated in a backbone of the copolymer and a second repeating unit capable of lowering a curing temperature, a combination of a first polymer including the first repeating unit and a second polymer including the second repeating unit, or a combination thereof; a second layer disposed directly on one side of the first layer, wherein the second layer includes graphene; and a third layer disposed on the second layer, wherein the third layer includes an electrically conductive metal nanowire.

公开(公告)号：US20170110213A1

公开(公告)日：2017-04-20

申请号：US15296261

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Sungwoo HWANG ,  Se Yun KIM ,  Jong Wook ROH ,  Woojin LEE ,  Jongmin LEE ,  Doh Won JUNG ,  Chan KWAK

IPC: H01B1/08

CPC classification number: H01B1/08 ,  G06F3/041 ,  G06F2203/04102

Abstract: An electrical conductor includes: a first conductive layer including a plurality of ruthenium oxide nanosheets, wherein at least one ruthenium oxide nanosheet of the plurality of ruthenium oxide nanosheets includes a halogen, a chalcogen, a Group 15 element, or a combination thereof on a surface of the ruthenium oxide nanosheet.