Thermally developable materials with improved conductive layer
    31.
    发明授权
    Thermally developable materials with improved conductive layer 有权
    具有改进的导电层的可热显影材料

    公开(公告)号:US07141361B2

    公开(公告)日:2006-11-28

    申请号:US11053088

    申请日:2005-02-08

    CPC classification number: G03C1/49872 G03C1/4989 G03C1/853

    Abstract: Buried backside conductive layers with increased conductive efficiency can be provided for thermally developable materials using a specific organic solvent mixture to coat a protective overcoat directly disposed over the conductive layer. This organic solvent mixture comprises an alcohol in which one or more film-forming polymers used in the formulation are soluble at room temperature. The alcohol is used in an amount of more than 10 and up to 90 weight % of the organic solvent mixture.

    Abstract translation: 可以为使用特定有机溶剂混合物涂覆直接设置在导电层上的保护性外涂层的可热显影材料提供具有增加的导电效率的埋入式背面导电层。 该有机溶剂混合物包含其中一种或多种在制剂中使用的成膜聚合物在室温下可溶的醇。 醇的使用量大于10重量%至高达90重量%的有机溶剂混合物。

    Turbulent tassel chamber
    33.
    发明申请
    Turbulent tassel chamber 有权
    湍流流苏室

    公开(公告)号:US20050284031A1

    公开(公告)日:2005-12-29

    申请号:US10861666

    申请日:2004-06-04

    Applicant: Samuel Chen

    Inventor: Samuel Chen

    CPC classification number: E04H15/20 A63G31/12 E04H2015/201

    Abstract: A turbulent tassel column has an inflatable clear column member containing tassels held inside the column. The tassels circulate freely or are wall attached within the transparent column member. An inverted cone member held within the inflatable member directs airflow blowing tassels. The inverted cone member has an exit aperture and an input aperture. The input aperture receives airflow from the bottom of the column and directs airflow through an exit aperture. Tassels accumulating at the bottom of the input aperture receive airflow arriving from the bottom of the column at the input aperture.

    Abstract translation: 湍流流苏柱具有包含保持在柱内的流苏的可充气透明柱构件。 流苏自由地流通或者壁挂在透明柱构件内。 保持在可充气构件内的倒置的锥形构件引导气流吹动的流苏。 倒锥形构件具有出口孔和输入孔。 输入孔从塔的底部接收气流并引导气流通过出口孔。 积聚在输入孔底部的流苏在输入孔处接收从柱底部流出的气流。

    TRAMPOLINE SYSTEM
    34.
    发明申请
    TRAMPOLINE SYSTEM 有权
    TRAMPOLINE系统

    公开(公告)号:US20050107217A1

    公开(公告)日:2005-05-19

    申请号:US10714723

    申请日:2003-11-17

    Applicant: Samuel Chen

    Inventor: Samuel Chen

    CPC classification number: A63B5/11 A63B21/023 A63B71/0054 A63B2071/0063

    Abstract: A trampoline system has a frame with horizontal and supporting members raising the frame above the ground. The trampoline bed and springs have a pad body attached to the trampoline frame by straps. Each strap pair has an upper and lower strap attached to the pad body at a junction. Flange braces are mounted on the junction between the horizontal members and supporting members. A limiting member connecting each strap pair at a distance from the junction defines a pad strap gap as the distance from the junction to the limiting member. The pad strap gap is an elastic slack space sized according to the distance between the trampoline frame and the outer periphery of the trampoline pad body.

    Abstract translation: 蹦床系统具有水平的框架和支撑构件,使框架在地面上方升起。 蹦床床和弹簧具有通过带子附接到蹦床框架的垫体。 每个带对具有在连接处附接到垫体的上和下带。 法兰支架安装在水平构件和支撑构件之间的连接处。 连接每个带对的限制构件距离接合处一定距离处限定了衬垫带间隙,作为从结到限制构件的距离。 垫带间隙是根据蹦床框架和蹦床垫体的外周之间的距离而大小的弹性松弛空间。

    Josephson junction device comprising high critical temperature
crystalline copper superconductive layers
    37.
    发明授权
    Josephson junction device comprising high critical temperature crystalline copper superconductive layers 失效
    约瑟夫逊结器件包括高临界温度的结晶铜超导层

    公开(公告)号:US5552373A

    公开(公告)日:1996-09-03

    申请号:US867063

    申请日:1992-04-10

    CPC classification number: H01L39/2496 H01L39/225

    Abstract: A Josephson junction device is disclosed having a substrate upon which are located overlying and underlying high critical temperature crystalline oxide superconductive layers separated by an interposed impedance controlling layer. The underlying superconductive layer is limited to a selected area of the substrate while the overlying and interposed layers overlie only a portion of the underlying superconductive layer. Nonsuperconducting oxide layer portions laterally abut the superconductive and interposed layers. A first electrical conductor is attached to the underlying superconductive layer at a location free of overlying oxide layers, and a second electrical conductor contacts the overlying superconductive layer and extends laterally over the adjacent laterally abutting nonsuperconductive layer portion. A process is disclosed for preparing the Josephson junction device in which a Josephson junction layer sequence is deposited on a substrate, a portion of the Josephson junction layer sequence laterally abutting a selected area is converted to a nonsuperconducting form, within the selected area overlying layers are removed from the superconducting layer nearer the substrate, and an electrical conductor extends laterally from the superconducting layer farther removed from the substrate to the laterally abutting nonsuperconducting layer.

    Abstract translation: 公开了一种约瑟夫逊结器件,其具有衬底,位于其上并且位于由插入的阻抗控制层分开的高临界温度结晶氧化物超导层之下。 底层的超导层限于衬底的选定区域,而覆盖和插入的层仅覆盖下面的超导层的一部分。 非导电氧化物层部分横向邻接超导和插入的层。 第一电导体在没有覆盖氧化物层的位置处附接到下面的超导层,并且第二电导体接触上覆的超导层并横向延伸在相邻的横向邻接的非超导电导层部分上。 公开了一种制备约瑟夫逊结结器件的方法,其中约瑟夫逊结层序列沉积在衬底上,约束结层序列横向邻接所选区域的部分被转换为非超导形式,在覆盖层的选定区域内 从超导层离开更靠近衬底的电导体,并且电导体从更远离衬底的超导层横向延伸到横向邻接的非超导层。

    Isolation region in a group III-V semiconductor device and method of
making the same
    38.
    发明授权
    Isolation region in a group III-V semiconductor device and method of making the same 失效
    III-V族半导体器件中的隔离区及其制造方法

    公开(公告)号:US5399900A

    公开(公告)日:1995-03-21

    申请号:US133552

    申请日:1993-10-08

    CPC classification number: H01L21/2654 H01L21/7605

    Abstract: A semiconductor device having in a body of a group III-V semiconductor material at least one isolation region which is stable at temperatures up to about 900.degree. C. The isolation region is formed of ions of a group III or V element which are implanted into the body and then thermally annealed at a temperature of between 650.degree. C. and 900.degree. C. This provides the regions with voids which remove free carriers and makes the region highly resistive.

    Abstract translation: 一种半导体器件,其具有III-V族半导体材料的主体,该至少一个隔离区在高达约900℃的温度下是稳定的。隔离区由III或V族元素的离子形成, 然后在650℃至900℃的温度下进行热退火。这为这些区域提供了去除游离载体并使该区域具有高电阻性的空隙。

    Playground slide
    40.
    外观设计

    公开(公告)号:USD992070S1

    公开(公告)日:2023-07-11

    申请号:US29813752

    申请日:2021-11-01

    Applicant: Samuel Chen

    Designer: Samuel Chen

    Abstract: FIG. 1 is a perspective view.
    FIG. 2 is a top view.
    FIG. 3 is a bottom view.
    FIG. 4 is a left side view.
    FIG. 5 is a right side view.
    FIG. 6 is a front view.
    FIG. 7 is a back view; and,
    FIG. 8 is a bottom perspective view.

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