公开(公告)号：US20110210372A1

公开(公告)日：2011-09-01

申请号：US13037694

申请日：2011-03-01

Applicant: Samuel Menard ,  François Ihuel

Inventor： Samuel Menard ,  François Ihuel

IPC: H01L29/747

CPC classification number: H01L29/747 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0661 ,  H01L29/0834

Abstract: A high-voltage vertical power component including a lightly-doped semiconductor substrate of a first conductivity type and, on the side of an upper surface, an upper semiconductor layer of the second conductivity type which does not extend all the way to the component periphery, wherein the component periphery includes, on the lower surface side, a ring-shaped diffused region of the second conductivity type extending across from one third to half of the component thickness; and on the upper surface side, an insulated ring-shaped groove crossing the substrate to penetrate into an upper portion of ring-shaped region.

Abstract translation: 一种高电压垂直功率分量，包括第一导电类型的轻掺杂半导体衬底，并且在上表面侧，不延伸到组件周边的第二导电类型的上半导体层， 其中所述部件周边在所述下表面侧包括跨越所述部件厚度的三分之一到一半的所述第二导电类型的环形扩散区域; 并且在上表面侧具有与基板交叉的绝缘环状槽，以穿透到环形区域的上部。

公开(公告)号：US07718473B2

公开(公告)日：2010-05-18

申请号：US11643444

申请日：2006-12-21

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L21/332 ,  H01L29/74

CPC classification number: H03K17/723 ,  H01L29/0692 ,  H01L29/747

Abstract: An HF control bi-directional switch component of the type having its gate referenced to the rear surface formed in the front surface of a peripheral well of the component, including two independent gate regions intended to be respectively connected to terminals of a transformer having a midpoint connected to the rear surface terminal of the component.

Abstract translation: 这种类型的HF控制双向开关组件，其门以基部构成的外表面的前表面形成，包括两个独立的栅极区域，分别连接到具有中点的变压器的端子 连接到部件的后表面端子。

公开(公告)号：US20090015315A1

公开(公告)日：2009-01-15

申请号：US12171141

申请日：2008-07-10

Applicant: Jerome Heurtier ,  Samuel Menard ,  Amaud Florence

Inventor： Jerome Heurtier ,  Samuel Menard ,  Amaud Florence

IPC: H03K17/725

CPC classification number: H02M5/2573

Abstract: A circuit for generating a D.C. signal for controlling an A.C. switch referenced to a first potential, from a high-frequency signal referenced to a second potential, including: a first capacitive element connecting a first input terminal, intended to receive the high-frequency signal, to the cathode of a rectifying element having its anode connected to a first output terminal intended to be connected to a control terminal of the switch; and a second capacitive element connecting a second input terminal, intended to be connected to the second reference potential, to a second output terminal intended to be connected to the first reference potential, a second rectifying element connecting the cathode of the first rectifying element to the second output terminal.

Abstract translation: 一种用于产生DC信号的电路，用于根据参考第二电位的高频信号来控制参考第一电位的AC开关，该高频信号包括：第一电容元件，连接第一输入端，用于接收高频信号 到其正极连接到旨在连接到开关的控制端子的第一输出端子的整流元件的阴极; 以及第二电容元件，将要连接到第二参考电位的第二输入端子连接到旨在连接到第一参考电位的第二输出端子;将第一整流元件的阴极连接到第二整流元件的第二整流元件， 第二输出端子。

公开(公告)号：US20080142834A1

公开(公告)日：2008-06-19

申请号：US12026121

申请日：2008-02-05

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/747

CPC classification number: H01L29/747 ,  H01L29/7404

Abstract: A voltage-controlled vertical bidirectional monolithic switch, referenced with respect to the rear surface of the switch, formed from a lightly-doped N-type semiconductor substrate, in which the control structure includes, on the front surface side, a first P-type well in which is formed an N-type region, and a second P-type well in which is formed a MOS transistor, the first P-type well and the gate of the MOS transistor being connected to a control terminal, said N-type region being connected to a main terminal of the MOS transistor, and the second main terminal of the MOS transistor being connected to the rear surface voltage of the switch.

Abstract translation: 由轻掺杂的N型半导体衬底形成的相对于开关的后表面所指的压控垂直双向单片开关，其中控制结构在前表面侧包括第一P型 其中形成N型区域，其中形成有MOS晶体管的第二P型阱，所述第一P型阱和MOS晶体管的栅极连接到控制端子，所述N型阱 区域连接到MOS晶体管的主端子，并且MOS晶体管的第二主端子连接到开关的背面电压。

公开(公告)号：US07259407B2

公开(公告)日：2007-08-21

申请号：US10963383

申请日：2004-10-12

Applicant: Samuel Menard ,  Christophe Mauriac

Inventor： Samuel Menard ,  Christophe Mauriac

IPC: H01L29/74

CPC classification number: H01L29/42308 ,  H01L29/41716 ,  H01L29/7408 ,  H03K17/722

Abstract: A vertical SCR switch to be controlled by a high-frequency signal having at least four main alternated layers. The switch includes a gate terminal and a gate reference terminal connected via integrated capacitors to corresponding areas. In the case of a thyristor, having on its front surface side a main P-type semiconductor area formed in an N-type gate semiconductor area, a first portion of the main area being connected to one of the main areas, a second portion of the main area is connected to one of the control terminals via a first integrated capacitor, and a portion of the gate area being connected to the other of the control terminals via a second integrated capacitor.

Abstract translation: 垂直SCR开关由具有至少四个主交替层的高频信号控制。 该开关包括通过集成电容器连接到相应区域的栅极端子和栅极参考端子。 在晶闸管的情况下，在其正面侧具有形成在N型栅极半导体区域中的主P型半导体区域，主区域的第一部分连接到主区域之一，第二部分 主区域经由第一集成电容器连接到控制端子之一，并且栅极区域的一部分经由第二集成电容器连接到另一个控制端子。

公开(公告)号：US20070176667A1

公开(公告)日：2007-08-02

申请号：US11518855

申请日：2006-09-11

Applicant: Jerome Heurtier ,  Samuel Menard

Inventor： Jerome Heurtier ,  Samuel Menard

IPC: H03L5/00

CPC classification number: H01L29/0692 ,  H01L29/7395 ,  H03K19/017554

Abstract: A monolithic interface circuit for providing a voltage, from a control circuit supplied by a supply voltage referenced to a reference voltage, to a terminal likely to be at a high voltage with respect to the reference voltage, comprising a high-voltage N-channel MOS transistor having its gate intended to receive a control signal referenced to the reference voltage and having its source intended to be connected to the reference voltage, and a high-voltage PNP transistor having its base connected to the drain of the MOS transistor, having its emitter intended to receive the supply voltage and having its collector intended to provide a voltage to the terminal likely to be at a high voltage.

Abstract translation: 一种单片接口电路，用于从由参考电压提供的电源电压提供的控制电路提供相对于参考电压可能处于高电压的端子，包括高电压N沟道MOS 其晶体管的栅极旨在接收参考参考电压的控制信号，并且其源极意图连接到参考电压;以及高压PNP晶体管，其基极连接到MOS晶体管的漏极，具有其发射极 旨在接收电源电压并使其收集器旨在向可能处于高电压的端子提供电压。

公开(公告)号：US07161191B2

公开(公告)日：2007-01-09

申请号：US10963384

申请日：2004-10-12

Applicant: Samuel Menard ,  Christophe Mauriac

Inventor： Samuel Menard ,  Christophe Mauriac

IPC: H01L29/74

CPC classification number: H03K17/0403 ,  H01L29/7412 ,  H03K17/722

Abstract: A vertical SCR-type switch including a control area having a first control region forming a first diode with a first neighboring region or layer, and a second control region forming a second diode with a second neighboring region or layer. A contact is formed on each of the first and second control regions and on each of the first and second neighboring regions or layers. The contacts are connected to terminals of application of an A.C. control voltage so that, when an A.C. voltage is applied, each of the two diodes is alternately conductive.

Abstract translation: 一种垂直SCR型开关，包括具有形成具有第一相邻区域或层的第一二极管的第一控制区域的控制区域和形成具有第二相邻区域或层的第二二极管的第二控制区域。 在第一和第二控制区域中的每一个上以及在第一和第二相邻区域或第二层中的每一个上形成接触。 触点连接到应用交流电控制电压的端子，使得当施加交流电压时，两个二极管中的每一个交替导电。

公开(公告)号：US20050082566A1

公开(公告)日：2005-04-21

申请号：US10963384

申请日：2004-10-12

Applicant: Samuel Menard ,  Christophe Mauriac

Inventor： Samuel Menard ,  Christophe Mauriac

IPC: H01L29/74 ,  H03K17/04 ,  H03K17/722 ,  H01L29/417

CPC classification number: H03K17/0403 ,  H01L29/7412 ,  H03K17/722

Abstract: A vertical SCR-type switch including a control area having a first control region forming a first diode with a first neighboring region or layer, and a second control region forming a second diode with a second neighboring region or layer. A contact is formed on each of the first and second control regions and on each of the first and second neighboring regions or layers. The contacts are connected to terminals of application of an A.C. control voltage so that, when an A.C. voltage is applied, each of the two diodes is alternately conductive.

Abstract translation: 一种垂直SCR型开关，包括具有形成具有第一相邻区域或层的第一二极管的第一控制区域的控制区域和形成具有第二相邻区域或层的第二二极管的第二控制区域。 在第一和第二控制区域中的每一个上以及在第一和第二相邻区域或第二层中的每一个上形成接触。 触点连接到应用交流电控制电压的端子，使得当施加交流电压时，两个二极管中的每一个交替导电。