公开(公告)号：US09768279B2

公开(公告)日：2017-09-19

申请号：US14263479

申请日：2014-04-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kosei Noda ,  Yuichi Sato ,  Yuta Endo

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/265 ,  H01L29/786 ,  H01L27/1156

CPC classification number: H01L29/66969 ,  H01L21/26586 ,  H01L27/1156 ,  H01L29/7869

Abstract: To provide a transistor formed using an oxide semiconductor film with reduced oxygen vacancies. To provide a semiconductor device that operates at high speed. To provide a highly reliable semiconductor device. To provide a miniaturized semiconductor device. The semiconductor device includes an oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; a gate insulating film between the oxide semiconductor film and the gate electrode; and a protective insulating film that is above the oxide semiconductor film, the gate electrode, and the gate insulating film and includes a region containing phosphorus or boron.

公开(公告)号：US09754980B2

公开(公告)日：2017-09-05

申请号：US15193677

申请日：2016-06-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Riho Kataishi ,  Hiroshi Ohki ,  Yuichi Sato ,  Daisuke Matsubayashi

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/109

CPC classification number: H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14647 ,  H01L27/14665 ,  H01L27/14694 ,  H01L27/14696 ,  H01L31/0224 ,  H01L31/022475 ,  H01L31/0272 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/109

Abstract: An imaging device with excellent imaging performance is provided. An imaging device that easily performs imaging under a low illuminance condition is provided. A low power consumption imaging device is provided. An imaging device with small variations in characteristics between its pixels is provided. A highly integrated imaging device is provided. A photoelectric conversion element includes a first electrode, and a first layer, a second layer, and a third layer. The first layer is provided between the first electrode and the third layer. The second layer is provided between the first layer and the third layer. The first layer contains selenium. The second layer contains a metal oxide. The third layer contains a metal oxide and also contains at least one of a rare gas atom, phosphorus, and boron. The selenium may be crystalline selenium. The second layer may be a layer of an In—Ga—Zn oxide including c-axis-aligned crystals.