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公开(公告)号：US20230387136A1
公开(公告)日：2023-11-30
申请号：US18231902
申请日：2023-08-09
IPC分类号： H01L27/12 , H01L29/786 , H01L29/51 , G02F1/1333 , G02F1/1337 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L29/24
CPC分类号： H01L27/1225 , H01L29/78609 , H01L27/124 , H01L27/1248 , H01L27/1214 , H01L29/7869 , H01L29/517 , G02F1/133345 , G02F1/1337 , G02F1/134309 , G02F1/136227 , G02F1/136277 , G02F1/1368 , H01L29/24
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
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公开(公告)号：US11302824B2
公开(公告)日：2022-04-12
申请号：US16919441
申请日：2020-07-02
发明人： Shunpei Yamazaki , Jun Koyama , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L33/00 , H01L29/786 , H01L27/12 , H01L27/02 , H01L21/66
摘要： A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.
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公开(公告)号：US20200168739A1
公开(公告)日：2020-05-28
申请号：US16778336
申请日：2020-01-31
发明人： Shunpei Yamazaki , Masashi Tsubuku , Kosei Noda , Kouhei Toyotaka , Kazunori Watanabe , Hikaru Harada
IPC分类号： H01L29/786 , H01L29/423 , H01L29/417 , H01L27/12 , H01L29/24 , H01L27/108 , G06F15/76 , H01L49/02 , H01L27/11
摘要： An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.
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公开(公告)号：US10593710B2
公开(公告)日：2020-03-17
申请号：US16008437
申请日：2018-06-14
发明人： Shunpei Yamazaki , Jun Koyama , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L27/12 , H01L29/786 , G09G3/20 , G09G3/3291 , G09G3/3233 , G09G3/36 , H03K19/003 , H03K19/096 , G11C19/28 , H03K17/16 , G11C19/18
摘要： To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.
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公开(公告)号：US10319744B2
公开(公告)日：2019-06-11
申请号：US16133823
申请日：2018-09-18
发明人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L27/15 , H01L27/12 , H04R1/02 , H04M1/02 , H01L27/32 , H01L29/24 , H01L29/786 , H01L29/36 , H01L33/02 , H01L21/8234
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
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公开(公告)号：US10153360B2
公开(公告)日：2018-12-11
申请号：US15584242
申请日：2017-05-02
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda
IPC分类号： H01L29/66 , H01L29/51 , H01L29/423 , H01L21/477 , H01L21/425 , H01L29/786 , H01L21/02 , H01L21/28
摘要： A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.
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公开(公告)号：US10074747B2
公开(公告)日：2018-09-11
申请号：US15372493
申请日：2016-12-08
发明人： Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake , Kei Takahashi , Kouhei Toyotaka , Masashi Tsubuku , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L29/78 , H01L29/786 , H01L23/66 , H01L29/24 , H01L27/088 , H01L29/66 , H01L21/8236 , G06K19/077 , G11C7/00 , G11C19/28 , H02M3/07
CPC分类号： H01L29/78609 , G06K19/07758 , G11C7/00 , G11C19/28 , H01L21/8236 , H01L23/66 , H01L27/0883 , H01L27/1225 , H01L29/24 , H01L29/26 , H01L29/66969 , H01L29/7869 , H01L29/78696 , H01L2223/6677 , H02M3/07
摘要： An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.
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公开(公告)号：US10002891B2
公开(公告)日：2018-06-19
申请号：US15469888
申请日：2017-03-27
发明人： Shunpei Yamazaki , Jun Koyama , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L27/12 , H01L29/786 , G09G3/20 , G09G3/32 , G09G3/36 , G11C19/18 , G11C19/28 , H03K17/16 , H03K19/00 , H03K19/096 , G09G3/3291 , H03K19/003 , G09G3/3233
CPC分类号： H01L27/1255 , G09G3/20 , G09G3/2092 , G09G3/3233 , G09G3/3291 , G09G3/36 , G09G3/3648 , G09G2300/0439 , G09G2300/08 , G09G2300/0842 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , G09G2310/08 , G11C19/184 , G11C19/28 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L29/7869 , H03K17/161 , H03K19/00315 , H03K19/096
摘要： Exemplary semiconductor devices include eight transistors and two capacitors interconnected in specific configurations. A display device may include a driver circuit having such a semiconductor device. An electronic device may also include such a semiconductor device and an input unit, LED lamp or speaker.
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公开(公告)号：US20180138211A1
公开(公告)日：2018-05-17
申请号：US15726691
申请日：2017-10-06
IPC分类号： H01L27/12 , H01L29/786 , H01L29/51 , H01L29/24 , G02F1/1333 , G02F1/1368 , G02F1/1362 , G02F1/1343 , G02F1/1337
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/1337 , G02F1/134309 , G02F1/136227 , G02F1/136277 , G02F1/1368 , H01L27/1214 , H01L27/124 , H01L27/1248 , H01L29/24 , H01L29/517 , H01L29/78609 , H01L29/7869
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
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公开(公告)号：US09960279B2
公开(公告)日：2018-05-01
申请号：US14560259
申请日：2014-12-04
发明人： Toshinari Sasaki , Kosei Noda , Yuhei Sato , Yuta Endo
IPC分类号： H01L29/78 , H01L29/786 , H01L29/423
CPC分类号： H01L29/7869 , H01L29/42364
摘要： Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance.
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