公开(公告)号：US20070278410A1

公开(公告)日：2007-12-06

申请号：US11800657

申请日：2007-05-07

申请人： Zang Cho ,  Young Kim ,  Cheol Lee ,  In Hong ,  Sung Chung ,  Hang Kim ,  Young Son

发明人： Zang Cho ,  Young Kim ,  Cheol Lee ,  In Hong ,  Sung Chung ,  Hang Kim ,  Young Son

IPC分类号： G06K9/00 ,  G01T1/164

CPC分类号： G01T1/2985 ,  A61B6/037 ,  G06T11/003 ,  G06T11/006 ,  G06T2211/424

摘要： A method and apparatus are provided for reconstructing 3D image. The method may include the steps of: detecting a plurality of line of responses (LORs) emitted from an object; transforming the plurality of LORs into first sinogram data; back-projecting the first sinogram data with a plurality of projection angles to produce image data for the object; and projecting the produced image data with the plurality of projection angles to transform the image data into second sinogram data. The back-projecting may include filling pixels of image plane for each of the plurality of projection angles with the first sinogram data and rotating a coordinate axis of the image plane with corresponding projection angle to produce the image data. The projecting may include rotating the image data with corresponding projection angle in an opposite direction before projecting the image data with the plurality of projection angles. The projecting and the back-projecting may use symmetry properties in coordinate space.

摘要翻译： 提供了一种重建3D图像的方法和装置。 该方法可以包括以下步骤：检测从对象发射的多条响应行（LOR）; 将多个LOR转换成第一个正弦图数据; 以多个投影角度反投影第一正弦图数据以产生该对象的图像数据; 并且利用多个投影角度投影所生成的图像数据，以将图像数据转换成第二正弦图数据。 反投影可以包括用第一正弦图数据为多个投影角度中的每一个填充图像平面的像素，并且以相应的投影角旋转图像平面的坐标轴以产生图像数据。 投影可以包括在用多个投影角度投影图像数据之前以相反方向旋转具有相应投影角的图像数据。 投影和背投可以在坐标空间中使用对称性。

公开(公告)号：US20070221991A1

公开(公告)日：2007-09-27

申请号：US11480999

申请日：2006-07-06

申请人： Sung Chung ,  Sang Lee

发明人： Sung Chung ,  Sang Lee

IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L31/0392

CPC分类号： H01L21/823487 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/785

摘要： The semiconductor device includes an active region, a recess channel region including vertical channel structures, a gate insulating film, and a gate structure. The active region is defined by a device isolation structure formed in a semiconductor substrate. The recess channel region is formed in the active region. The vertical silicon-on-insulator (SOI) channel structures are disposed at sidewalls of both device isolation structures in a longitudinal direction of a gate region. The gate insulating film is disposed over the active region including the recess channel region. The gate structure is disposed over the recess channel region of the gate region.

摘要翻译： 半导体器件包括有源区，包括垂直沟道结构的凹槽沟道区，栅极绝缘膜和栅极结构。 有源区由半导体衬底中形成的器件隔离结构限定。 凹陷沟道区形成在有源区中。 垂直绝缘体上硅（SOI）通道结构在栅极区域的纵向方向上设置在两个器件隔离结构的侧壁处。 栅极绝缘膜设置在包括凹陷沟道区域的有源区域之上。 栅极结构设置在栅极区域的凹槽沟道区域的上方。

公开(公告)号：US20070020902A1

公开(公告)日：2007-01-25

申请号：US11284957

申请日：2005-11-23

申请人： Sung Chung ,  Sang Lee

发明人： Sung Chung ,  Sang Lee

IPC分类号： H01L21/3205 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/823437 ,  H01L21/823412 ,  H01L21/823481 ,  H01L29/66818 ,  H01L29/7851 ,  H01L29/7853 ,  Y10S257/903

摘要： Disclosed herein is a transistor for a semiconductor device and a method of forming the same. According to the present invention, a novel transistor structure combining a plane channel transistor and a fin-type channel transistor formed on the semiconductor substrate is provided to secure a sufficient channel width as compared to that of the plane channel transistor, thereby satisfying drive current regulated for the transistor.

摘要翻译： 本文公开了一种用于半导体器件的晶体管及其形成方法。 根据本发明，提供组合平面沟道晶体管和形成在半导体衬底上的鳍型沟道晶体管的新型晶体管结构，以确保与平面沟道晶体管相比足够的沟道宽度，由此满足驱动电流调节 用于晶体管。

公开(公告)号：US20070012997A1

公开(公告)日：2007-01-18

申请号：US11321537

申请日：2005-12-30

申请人： Sung Chung ,  Sang Lee

发明人： Sung Chung ,  Sang Lee

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L29/7834 ,  H01L29/66621

摘要： Disclosed herein is a transistor for a semiconductor device and a method of forming the same. According to the present invention, a recess channel region is formed on a cell region to increase a channel length and a fin-type channel region is simultaneously formed on a peripheral circuit region to increase a channel area so as to simplify process steps, thereby improving the yield and productivity for manufacturing a semiconductor device.

摘要翻译： 本文公开了一种用于半导体器件的晶体管及其形成方法。 根据本发明，在单元区域上形成凹槽沟道区域以增加沟道长度，并且在外围电路区域上同时形成翅片型沟道区以增加沟道面积，从而简化工艺步骤，由此改善 用于制造半导体器件的产量和生产率。

公开(公告)号：US20050158399A1

公开(公告)日：2005-07-21

申请号：US10809509

申请日：2004-03-26

申请人： Hyun Yu ,  Dong Lee ,  Kug Hong ,  Choon Lee ,  Jae Lee ,  Dong Lee ,  Bong Chang ,  Jin Kim ,  Sung Chung

发明人： Hyun Yu ,  Dong Lee ,  Kug Hong ,  Choon Lee ,  Jae Lee ,  Dong Lee ,  Bong Chang ,  Jin Kim ,  Sung Chung

IPC分类号： A61C8/00 ,  A61K6/033 ,  A61K33/42 ,  A61L27/00 ,  A61L27/12 ,  A61L27/32 ,  C04B35/447

CPC分类号： A61L27/32 ,  A61K33/42 ,  A61L27/12 ,  A61K2300/00

摘要： Disclosed is a method for producing a transparent and homogenized polymeric sol of a calcium phosphate compound, containing apatite and having excellent wettability and bioactivity, according to a sol-gel synthesis, and a method for coating the polymeric sol on a metal implant, in which the polymeric sol is coated on the metal implant and then heat-treated to form a dense coated layer strongly bonded to the metal implant. The polymeric sol is obtained by process of preparing a calcium salt solution, containing calcium ethoxide dissolved in organic acid, and a phosphate solution, containing triethyl phosphite or triethyl phosphate dissolved in the organic acid, mixing the calcium salt solution with the phosphate solution to produce a mixed solution, and aging the mixed solution.

摘要翻译： 本发明公开了一种根据溶胶 - 凝胶合成法生产含有磷灰石并具有优异的润湿性和生物活性的磷酸钙化合物的透明均化聚合物溶胶的方法，以及在金属植入物上涂覆聚合物溶胶的方法，其中 将聚合物溶胶涂覆在金属植入物上，然后进行热处理以形成与金属植入物牢固结合的致密涂层。 通过制备溶解在有机酸中的含有乙醇钙的钙盐溶液和溶解在有机酸中的含有亚磷酸三乙酯或磷酸三乙酯的磷酸盐溶液，将钙盐溶液与磷酸盐溶液混合，得到聚合物溶胶 混合溶液，老化混合溶液。