摘要:
In a semiconductor device and a method of manufacturing the semiconductor device, lower electrodes having cylindrical shapes are provided to be arranged repeatedly on a substrate. Upper surfaces of the lower electrodes are flat so that the lower electrodes have uniform heights. Supporting structures are provided between the lower electrodes to support the lower electrode, the supporting structure partially contacting outer surfaces of sidewalls of the lower electrodes that are arranged in a line. A dielectric layer is formed on surfaces of the lower electrodes and the supporting structures. An upper electrode is provided on the dielectric layer. The semiconductor device includes a capacitor having an improved capacitance. Further, the capacitor includes the support structure between the lower electrodes to prevent the adjacent lower electrodes from being short each other.
摘要:
An organic light emitting display includes a base substrate, a driving transistor arranged on the base substrate, a first electrode electrically connected to the driving transistor, an organic light emitting layer arranged on the first electrode to generate a light, a second electrode arranged on the organic light emitting layer, an opposite substrate facing the base substrate and including micro-lenses to disperse the light generated by the organic light emitting layer, and a sub-electrode arranged on at least one of the micro-lenses, the sub-electrode making contact with the second electrode to be electrically connected to the second electrode.
摘要:
A metal via contact of a semiconductor device and a method for fabricating the same, wherein the method includes sequentially forming a first insulating layer, a low dielectric SOG (Spin On Glass) layer, a second insulating layer and a silicon oxynitride (SiON) layer on a semiconductor substrate forming a photoresist pattern, using the photoresist pattern as an etching mask and wet etching the silicon oxynitride layer and a portion of the second insulating layer, using the same photoresist pattern as an etching mask and anisotropically etching remainder second insulating layer, the low dielectric SOG layer and the first insulating layer to form a via hole exposing a predetermined portion of the semiconductor substrate, removing the photoresist pattern, using radio frequency (RF) etching to remove a reverse slope of the via hole and forming a metal plug in the via hole.
摘要:
A pumping-type cosmetic container is characterized by an elastic discharging portion being formed on the top of a pumping member and opened by the pressure of contents of the container, and a sealing shaft being coupled to the elastic discharging portion such that sealing is enabled without the use of a separate check valve and air is prevented from entering into a bellows.
摘要:
A display substrate includes a transparent substrate, a pixel layer, an organic insulating layer, a transparent electrode and a reflective electrode. The pixel layer is formed on the transparent substrate, and includes a plurality of pixel parts. Each of the pixel parts includes a transmission region and a reflection region. The organic insulating layer is formed on the pixel layer. The transparent electrode is formed on the organic insulating layer corresponding to each of the pixel parts. The reflective electrode is formed on the transparent electrode corresponding to the reflection region. The reflective electrode includes a silver alloy that includes silver (Ag) and impurities having a low solubility in the silver.
摘要:
A display substrate includes a transparent substrate, a pixel layer, an organic insulating layer, a transparent electrode and a reflective electrode. The pixel layer is formed on the transparent substrate, and includes a plurality of pixel parts. Each of the pixel parts includes a transmission region and a reflection region. The organic insulating layer is formed on the pixel layer. The transparent electrode is formed on the organic insulating layer corresponding to each of the pixel parts. The reflective electrode is formed on the transparent electrode corresponding to the reflection region. The reflective electrode includes a silver alloy that includes silver (Ag) and impurities having a low solubility in the silver.
摘要:
A thin film transistor array panel is provided, which includes: a substrate having a display area including a plurality of display areas, and a peripheral area surrounding the display area; a plurality of thin film transistors respectively formed in the pixel areas; a passivation layer made of organic material and covering the thin film transistors; a plurality of pixel electrode respectively connected to the thin film transistors and formed on the passivation layer of the pixel areas; an organic light blocking member formed with the same layer as the pixel electrode and disposed in the peripheral area; and a sealant surrounding the display area, the sealant being formed on the passivation layer in the peripheral area. The organic blocking member overlaps the sealant.
摘要:
A fuse structure, an e-fuse including the fuse structure and a semiconductor device including the e-fuse are disclosed. The fuse structure includes first and second electrodes extending in a first direction, and spaced a predetermined distance apart from each other and having one ends thereof facing each other, an insulation layer formed between the one end of the first electrode and the one end of the second electrode facing each other, and a conductive film overlapping portions of the first and second electrodes on the insulation layer and contacting the first electrode and the one end of the second electrode.
摘要:
A fuse structure, an e-fuse including the fuse structure and a semiconductor device including the e-fuse are disclosed. The fuse structure includes first and second electrodes extending in a first direction, and spaced a predetermined distance apart from each other and having one ends thereof facing each other, an insulation layer formed between the one end of the first electrode and the one end of the second electrode facing each other, and a conductive film overlapping portions of the first and second electrodes on the insulation layer and contacting the first electrode and the one end of the second electrode.
摘要:
An organic light-emitting display device preventing edge defects between a pixel define layer and a pixel electrode, and a method of manufacturing the same. The organic light-emitting display device, comprises: a substrate; a pixel electrode disposed on the substrate and comprising a first pattern unit and a second pattern unit which are electrically disconnected; a pixel define unit disposed on the substrate and exposing the pixel electrode; an intermediate layer disposed on the pixel electrode and emitting light; and a counter electrode disposed on the intermediate layer and the pixel define layer.