公开(公告)号：US07125642B2

公开(公告)日：2006-10-24

申请号：US10773340

申请日：2004-02-09

申请人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Satoru Miyazawa

发明人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Satoru Miyazawa

IPC分类号： G03F7/004 ,  G03F7/30 ,  G03F7/38 ,  C08F28/02 ,  C08F32/08 ,  C08F12/08 ,  C08F20/02 ,  C08F118/02 ,  C08F216/16 ,  C07C303/26

CPC分类号： C07C309/67 ,  C07C2601/08 ,  C07C2601/14 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/108 ,  Y10S430/111

摘要： A sulfonate compound having formula (1) is novel wherein R1 to R3 are H, F or C1-20 alkyl or fluoroalkyl, at least one of R1 to R3 contains F. A polymer comprising units derived from the sulfonate compound is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance

摘要翻译： 具有式（1）的磺酸酯化合物是新的，其中R 1至R 3是H，F或C 1-20烷基或氟代烷基， R 1至R 3中的至少一个含有F.使用包含衍生自磺酸盐化合物的单元的聚合物作为基础树脂以配制抗敏剂组合物，其对 高能量辐射，在高达200nm的波长下保持高透明度，并且具有改善的碱溶性对比度和等离子体耐蚀刻性

公开(公告)号：US07125641B2

公开(公告)日：2006-10-24

申请号：US10773228

申请日：2004-02-09

申请人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Satoru Miyazawa

发明人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Satoru Miyazawa

IPC分类号： G03F7/004 ,  C08F114/18 ,  C08F12/30

CPC分类号： G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397

摘要： A polymer comprising recurring units of (1a) or (1b) wherein R1 is an acid labile group, adhesive group or fluoroalkyl, R2 is H, F, alkyl or fluoroalkyl, R3 and R4 each are a single bond, alkylene or fluoroalkylene, R5 is H or an acid labile group, “a” is 1 or 2, 0

摘要翻译： 包含（1a）或（1b）的重复单元的聚合物，其中R 1是酸不稳定基团，粘合剂基团或氟代烷基，R 2是H，F，烷基或 氟烷基，R 3和R 4各自为单键，亚烷基或氟亚烷基，R 5为H或酸不稳定基团，“a “为1或2,0

公开(公告)号：US20050266338A1

公开(公告)日：2005-12-01

申请号：US11128441

申请日：2005-05-13

申请人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Mitsuru Ueda ,  Hirokazu Imori ,  Toshiaki Fukuhara

发明人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Mitsuru Ueda ,  Hirokazu Imori ,  Toshiaki Fukuhara

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03C1/492

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  Y10S430/106 ,  Y10S430/108

摘要： A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R6 is a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol.

摘要翻译： 抗蚀剂材料包括含有具有由以下化学式1的通式表示的单元的化合物的基础聚合物：其中R 1，R 2和R 2， 3个相同或不同，为氢原子，氟原子，直链烷基，支链或环状烷基或碳数不小于1且不大于1的氟化烷基 20; R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5是氢原子，直链烷基，支链或环状烷基或碳数不少于1的氟化烷基或保护基 由酸释放; R 6是具有环状酯化合物的基团，具有羟基的脂环式化合物的基团或具有包含六氟异丙醇的化合物的基团。

公开(公告)号：US20050221221A1

公开(公告)日：2005-10-06

申请号：US11051721

申请日：2005-01-27

申请人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Kazuhiro Yamanaka

发明人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Kazuhiko Maeda ,  Haruhiko Komoriya ,  Kazuhiro Yamanaka

IPC分类号： G03F7/004 ,  C08F20/22 ,  C08F212/14 ,  C08F220/10 ,  C08F224/00 ,  C08F232/08 ,  C08F234/00 ,  G03C1/76 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0046 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/108 ,  Y10S430/111

摘要： A chemically amplified resist composition using an alternating copolymer of α-trifluoroacrylic acid with norbornene as a base polymer lends itself to ArF laser lithographic micropatterning and is improved in transparency, plasma etching resistance, and line edge roughness.

摘要翻译： 使用α-三氟丙烯酸与降冰片烯作为基础聚合物的交替共聚物的化学放大抗蚀剂组合物适用于ArF激光平版印刷微图案，并提高了透明度，等离子体耐蚀刻性和线边缘粗糙度。

公开(公告)号：US06946235B2

公开(公告)日：2005-09-20

申请号：US10636692

申请日：2003-08-08

申请人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Kazuhiko Maeda ,  Michitaka Ootani ,  Haruhiko Komoriya

发明人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Kazuhiko Maeda ,  Michitaka Ootani ,  Haruhiko Komoriya

IPC分类号： C08F28/02 ,  C08F212/14 ,  C08F220/12 ,  C08F232/00 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C1/492

CPC分类号： C08F28/02 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.

公开(公告)号：US06916592B2

公开(公告)日：2005-07-12

申请号：US10395268

申请日：2003-03-25

申请人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Kazuhiko Maeda ,  Michitaka Ootani ,  Haruhiko Komoriya

发明人： Yuji Harada ,  Jun Hatakeyama ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Kazuhiko Maeda ,  Michitaka Ootani ,  Haruhiko Komoriya

IPC分类号： C07C309/67 ,  G03F7/004 ,  G03F7/039 ,  C08F12/30 ,  C08F114/18 ,  G03F7/30 ,  G03F7/38

CPC分类号： C07C309/67 ,  C07C2603/68 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/115

摘要： A resist composition comprising a base polymer having a fluorinated sulfonate or fluorinated sulfone introduced therein is sensitive to high-energy radiation, has excellent transparency, contrast and adherence, and is suited for lithographic microprocessing.

摘要翻译： 包含其中引入氟化磺酸盐或氟化砜的基础聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的透明度，对比度和粘附性，并且适用于光刻微处理。

公开(公告)号：US06864037B2

公开(公告)日：2005-03-08

申请号：US10178237

申请日：2002-06-25

申请人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Michitaka Ootani ,  Satoru Miyazawa ,  Kentaro Tsutsumi ,  Kazuhiko Maeda

发明人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Michitaka Ootani ,  Satoru Miyazawa ,  Kentaro Tsutsumi ,  Kazuhiko Maeda

IPC分类号： G03F7/032 ,  G03F7/00 ,  G03F7/038 ,  G03F7/039 ,  G03C1/492 ,  G03F7/38 ,  G03F7/40

CPC分类号： G03F7/0395 ,  Y10S430/108 ,  Y10S430/111

摘要： A copolymer of an acrylic monomer having at least one C6-20 alicyclic structure with a norbornene derivative or styrene monomer having a hexafluoroalcohol pendant is highly transparent to VUV radiation and resistant to plasma etching. A resist composition using the polymer as a base resin is sensitive to high-energy radiation below 200 nm, has excellent sensitivity, transparency and dry etching resistance, and is suited for lithographic microprocessing.

摘要翻译： 具有至少一个C6-20脂环结构的丙烯酸单体与降冰片烯衍生物或具有六氟醇侧基的苯乙烯单体的共聚物对VUV辐射是高度透明的，并且耐等离子体蚀刻。 使用聚合物作为基础树脂的抗蚀剂组合物对于低于200nm的高能辐射敏感，具有优异的灵敏度，透明度和耐干蚀刻性，并且适用于光刻微处理。

公开(公告)号：US06790586B2

公开(公告)日：2004-09-14

申请号：US09947504

申请日：2001-09-07

申请人： Jun Hatakeyama ,  Yuji Harada ,  Jun Watanabe ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Michitaka Ootani ,  Satoru Miyazawa ,  Kentaro Tsutsumi ,  Kazuhiko Maeda

发明人： Jun Hatakeyama ,  Yuji Harada ,  Jun Watanabe ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Michitaka Ootani ,  Satoru Miyazawa ,  Kentaro Tsutsumi ,  Kazuhiko Maeda

IPC分类号： G03F7038

CPC分类号： G03F7/0395 ,  G03F7/0046 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/108

摘要： A resist composition comprising (A) a polymer comprising recurring units having an alicyclic hydrocarbon backbone to which a carboxylate moiety capable of generating carboxylic acid when decomposed under acidic conditions is attached through a C1-C20 alkylene spacer, (B) a photoacid generator, and (C) an organic solvent is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength below 180 nm, and good plasma etching resistance. Because these features of the inventive resist composition enable its use particularly as a resist at the exposure wavelength of a F2 excimer laser, a finely defined pattern can easily be formed, making the resist ideal as a micropatterning material in VLSI fabrication.

摘要翻译： 一种抗蚀剂组合物，其包含（A）包含具有脂环族烃主链的重复单元的聚合物，当在酸性条件下分解时，能够产生羧酸的羧酸酯部分通过C1-C20亚烷基间隔基，（B）光致酸产生剂和 （C）有机溶剂对高能辐射敏感，并且在低于180nm的波长下具有优异的灵敏度和分辨率，以及良好的等离子体耐蚀刻性。 由于本发明抗蚀剂组合物的这些特征使得其能够特别用作F2准分子激光器的曝光波长处的抗蚀剂，因此可以容易地形成精细限定的图案，使得抗蚀剂在VLSI制造中理想为微图案材料。

公开(公告)号：US06521393B1

公开(公告)日：2003-02-18

申请号：US09515334

申请日：2000-02-29

申请人： Shinji Kishimura ,  Akiko Katsuyama ,  Masaru Sasago

发明人： Shinji Kishimura ,  Akiko Katsuyama ,  Masaru Sasago

IPC分类号： G03F730

CPC分类号： G03F7/0045 ,  G03F7/0397 ,  Y10S430/111 ,  Y10S430/146

摘要： A resist film is formed by applying, on a semiconductor substrate, a chemically amplified resist including an acid generator of an onium salt having a halogen atom both in the cation and the anion thereof. The resist film is irradiated with a F2 laser beam with a wavelength of a 157 nm band or an Ar2 laser beam with a wavelength of a 126 nm band for pattern exposure, and the resist film is developed after the pattern exposure, thereby forming a resist pattern.

摘要翻译： 通过在半导体衬底上施加化学放大抗蚀剂，形成抗蚀剂膜，该抗蚀剂包括在其阳离子和阴离子中具有卤原子的鎓盐的酸产生剂。 用波长为157nm波长的F2激光束或波长为126nm波长的Ar2激光束照射抗蚀剂膜用于图案曝光，并且在图案曝光之后使抗蚀剂膜显影，从而形成抗蚀剂 模式。

公开(公告)号：US07166418B2

公开(公告)日：2007-01-23

申请号：US10932316

申请日：2004-09-02

申请人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Mitsuru Ueda ,  Hirokazu Imori ,  Toshiaki Fukuhara

发明人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Mitsuru Ueda ,  Hirokazu Imori ,  Toshiaki Fukuhara

IPC分类号： G03F7/30

CPC分类号： C08F220/18 ,  C08F212/02 ,  C08F228/02 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/108 ,  Y10S430/111

摘要： A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group, a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.