摘要:
Disclosed are a method and an apparatus for observing defects by using an SEM, wherein, in order to observe defects on a wafer at high speed and high sensitivity, positional information of defects on a sample, which has been optically inspected and detected by other inspecting apparatus, and information of the conditions of the optical inspection having been performed by other inspecting apparatus are obtained, and optically detecting the defects on the sample placed on a table, on the basis of the thus obtained information, and on the basis of the detected positional information of the defect on the sample placed on the table, the positional information of the defect having been inspected and detected by other inspecting apparatus is corrected, then, the defects on the sample placed on the table are observed by the SEM using the thus corrected positional information of the defects.
摘要:
When multiple kinds of bacterial colonies are present in a petri dish and, for example, a drug tolerance is to be measured, harvesting of mixed colonies of different types of bacteria makes it impossible to accurately determine the drug tolerance. Also, it is required to improve the throughput of a device for harvesting a bacterial colony. From images illuminated from multiple directions, isolating bacterial colonies are automatically extracted. Next, the image feature amounts are calculated from the multiple images that are illuminated from multiple directions and colonies are grouped depending on the feature amounts. Then, bacterial colonies to be harvested are determined based on the results of the grouping.
摘要:
A defect inspection method includes an illumination light adjustment step of adjusting light emitted from a light source, an illumination intensity distribution control step of forming light flux obtained in the illumination light adjustment step into desired illumination intensity distribution, a sample scanning step of displacing a sample in a direction substantially perpendicular to a longitudinal direction of the illumination intensity distribution, a scattered light detection step of counting the number of photons of scattered light emitted from plural small areas in an area irradiated with illumination light to produce plural scattered light detection signals corresponding to the plural small areas, a defect judgment step of processing the plural scattered light detection signals to judge presence of a defect, a defect dimension judgment step of judging dimensions of the defect in each place in which the defect is judged to be present and a display step of displaying a position on sample surface and the dimensions of the defect in each place in which the defect is judged to be present.
摘要:
A defect inspection device has: an illumination optical system which irradiates a predetermined region of an inspection target with illumination light; a detection optical system which has a detector provided with a plurality of pixels by which scattered light from the predetermined region of the inspection target due to illumination light from the illumination optical system can be detected; and a signal processing portion which is provided with a correction portion which corrects pixel displacement caused by change in a direction perpendicular to a surface of the inspection target with respect to a detection signal based on the scattered light detected by the detector of the detection optical system, and a defect determination portion which determines a defect on the surface of the inspection target based on the detection signal corrected by the correction portion.
摘要:
A defect inspection device has: an illumination optical system which irradiates a predetermined region of an inspection target with illumination light; a detection optical system which has a detector provided with a plurality of pixels by which scattered light from the predetermined region of the inspection target due to illumination light from the illumination optical system can be detected; and a signal processing portion which is provided with a correction portion which corrects pixel displacement caused by change in a direction perpendicular to a surface of the inspection target with respect to a detection signal based on the scattered light detected by the detector of the detection optical system, and a defect determination portion which determines a defect on the surface of the inspection target based on the detection signal corrected by the correction portion.
摘要:
In order to maximize the effect of signal addition during inspection of foreign substances in wafers, a device structure including line sensors arranged in plural directions is effective. Low-angle detection optical systems that detect light beams in plural azimuth directions, the light beams being scattered in low angle directions among those scattered from a linear area on a sample illuminated by illuminating means, each include a combination of a first imaging lens group (330) and a diffraction grating (340) and a combination of a second imaging lens group (333) and an image detector (350) having a plurality of light receiving surfaces. A signal processing unit processes signals from the image detectors of the low-angle detection optical systems by adding the signals from the light receiving surfaces corresponding between the image detectors.
摘要:
In order to maximize the effect of signal addition during inspection of foreign substances in wafers, a device structure including line sensors arranged in plural directions is effective. Low-angle detection optical systems that detect light beams in plural azimuth directions, the light beams being scattered in low angle directions among those scattered from a linear area on a sample illuminated by illuminating means, each include a combination of a first imaging lens group (330) and a diffraction grating (340) and a combination of a second imaging lens group (333) and an image detector (350) having a plurality of light receiving surfaces. A signal processing unit processes signals from the image detectors of the low-angle detection optical systems by adding the signals from the light receiving surfaces corresponding between the image detectors.
摘要:
The present invention provides a spatial filtering technology for exposing a defect image independently of polarization properties of defect scattered light, a defect inspection method for increasing a defect capture rate by suppressing the brightness saturation of a normal pattern, and a defect inspection apparatus that uses the defect inspection method. An array of spatial filters is disposed in one or more optical paths, which are obtained by polarizing and splitting a detection optical path, to filter diffracted light and scattered light emitted from the normal pattern. An image whose brightness saturation is suppressed is obtained by controlling an illumination light amount and/or detection efficiency during image detection in accordance with the amount of scattered light from the normal pattern.
摘要:
A conventional pattern inspection, which compares an image to be inspected with a reference image and subjects the resulting difference value to the defect detection using the threshold of defect determination, has difficulty in highly-sensitive inspection. Because defects occur only in specific circuit pattern sections, false reports occur in the conventional pattern inspections which are not based on the position. Disclosed are a defect inspection method and a device thereof which perform a pattern inspection by acquiring a GP image in advance, designating a place to be inspected and a threshold map to the GP image on the GUI, setting the identification reference of the defects, next acquiring the image to be inspected, applying the identification reference to the image to be inspected, and identifying the defects with the identification reference, thereby enabling the highly-sensitive inspection.
摘要:
A method and apparatus for reviewing defects of a semiconductor device is provided which involves detecting a defect on a SEM image taken at low magnification, and reviewing the defect on a SEM image taken at high magnification, and which can review a lot of defects in a short period of time thereby to improve the efficiency of defect review. In the present invention, the method for reviewing defects of a semiconductor device includes the steps of obtaining an image including a defect on the semiconductor device detected by a detection device by use of a scanning electron microscope at a first magnification, making a reference image from the image including the defect obtained at the first magnification, detecting the defect by comparing the image including the defect obtained at the first magnification to the reference image made from the image including the defect at the first magnification, and taking an image of the detected defect at a second magnification that is larger than the first magnification.