公开(公告)号：US11972146B2

公开(公告)日：2024-04-30

申请号：US17679103

申请日：2022-02-24

Applicant: Silicon Motion, Inc.

Inventor： Tsu-Han Lu ,  Hsiao-Chang Yen

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679

Abstract: A method of a flash memory controller includes: providing an input/output (I/O) circuit coupled to a flash memory device through a specific communication interface; and, controlling a processor sending a specific read command or a data toggle command through the I/O circuit and the specific communication interface into the flash memory device, to make the flash memory device perform a data toggle operation to control the flash memory device's data register selecting and transferring a first data unit and a second data unit to the flash memory device's I/O control circuit to make the I/O control circuit sequentially transmit the first data unit and the second data unit to the flash memory controller through the specific communication interface in response to the specific read command or the data toggle command.

公开(公告)号：US20240094915A1

公开(公告)日：2024-03-21

申请号：US17976901

申请日：2022-10-31

Applicant: Silicon Motion, Inc.

Inventor： Chia-Chi Liang ,  Hsiao-Chang Yen ,  Tsu-Han Lu

IPC: G06F3/06

CPC classification number: G06F3/0613 ,  G06F3/0629 ,  G06F3/0679

Abstract: A method for accessing a flash memory module includes: selecting a block in the flash memory module; selecting a specific encoding/decoding setting from a plurality of sets of encoding/decoding settings at least according to an erase count of the block, wherein the plurality of sets of encoding/decoding settings include different error correction code (ECC) lengths, respectively; utilizing the specific encoding/decoding setting to encode a data to generate an encoded data; and writing the encoded data into the block.

公开(公告)号：US11935595B2

公开(公告)日：2024-03-19

申请号：US17679125

申请日：2022-02-24

Applicant: Silicon Motion, Inc.

Inventor： Tsu-Han Lu ,  Hsiao-Chang Yen

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26

CPC classification number: G11C16/08 ,  G06F3/0659 ,  G06F3/0679 ,  G11C16/0433 ,  G11C16/102 ,  G11C16/14 ,  G11C16/26

Abstract: A flash memory scheme simplifies the command sequences transmitted between a flash memory device and a flash memory controller into a simplified command sequence so as to reduce the waiting time period of the command transmission and improve the performance of flash memory.

公开(公告)号：US20240004581A1

公开(公告)日：2024-01-04

申请号：US17852403

申请日：2022-06-29

Applicant: Silicon Motion, Inc.

Inventor： Tsu-Han Lu ,  Hsiao-Chang Yen

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/061 ,  G06F3/0679

Abstract: A method of a flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface includes: using a set-feature signal, which carries a set-feature command, a macro execution feature address, and corresponding macro execution parameter information, as a macro execution signal and transmitting the macro execution signal to the flash memory device to make the flash memory device execute multiple set-feature operations respectively having unique information defined by the corresponding macro execution parameter information carried in the macro execution signal.

公开(公告)号：US20240004550A1

公开(公告)日：2024-01-04

申请号：US17852385

申请日：2022-06-29

Applicant: Silicon Motion, Inc.

Inventor： Tsu-Han Lu ,  Hsiao-Chang Yen

IPC: G06F3/06

CPC classification number: G06F3/0613 ,  G06F3/0655 ,  G06F3/0679

Abstract: A method of a flash memory controller to be used in a storage device and coupled to a flash memory device of the storage device through a specific communication interface includes: using a set-feature signal, which carries a set-feature command, a macro execution feature address, and corresponding macro execution parameter information, as a macro execution signal and transmitting the macro execution signal to the flash memory device to make the flash memory device execute multiple set-feature operations respectively having unique information defined by the corresponding macro execution parameter information carried in the macro execution signal.

公开(公告)号：US11861212B2

公开(公告)日：2024-01-02

申请号：US17679120

申请日：2022-02-24

Applicant: Silicon Motion, Inc.

Inventor： Tsu-Han Lu ,  Hsiao-Chang Yen

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/061 ,  G06F3/0679

Abstract: A flash memory scheme simplifies the command sequences transmitted between a flash memory device and a flash memory controller into a simplified command sequence so as to reduce the waiting time period of the command transmission and improve the performance of flash memory.

公开(公告)号：US20230289098A1

公开(公告)日：2023-09-14

申请号：US17692121

申请日：2022-03-10

Applicant: Silicon Motion, Inc.

Inventor： Chia-Chi Liang ,  Tsu-Han Lu ,  Hsiao-Chang Yen

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/064 ,  G06F3/0611 ,  G06F3/0679

Abstract: The present invention provides a control method of a flash memory controller, wherein the flash memory controller is configured to access a flash memory module, the flash memory module includes a plurality of planes, and each plane includes a plurality of blocks; and the control method includes the steps of: after the flash memory controller is powered on, reading a first code bank from a specific block of the plurality of blocks; storing the first code bank into a buffer memory; executing the first code bank to manage the flash memory module; when the flash memory controller starts a code bank swapping operation, trying to read a second code bank from a super block; if the second code bank is read successfully, storing the second code bank into the buffer memory to replace the first code bank; and executing the second code bank to manage the flash memory module.