BULK ACOUSTIC WAVE RESONATOR WITH INTEGRATED CAPACITOR

    公开(公告)号:US20230216478A1

    公开(公告)日:2023-07-06

    申请号:US18147141

    申请日:2022-12-28

    IPC分类号: H03H9/17 H03H9/56

    CPC分类号: H03H9/174 H03H9/568

    摘要: An integrated bulk acoustic wave resonator-capacitor comprises a membrane including a piezoelectric film, an upper electrode disposed on a top surface of the piezoelectric film, and a lower electrode disposed on a lower surface of the piezoelectric film, a resonator region of the membrane defining a main active domain in which a main acoustic wave is generated during operation, and a capacitor region of the membrane surrounding the resonator region, the capacitor region including a layer of conductive material disposed on the upper electrode, an inner capacitor raised frame defined on an inner peripheral region of the layer of conductive material, and an outer capacitor raised frame defined on an outer peripheral region of the layer of conductive material.

    WAFER LEVEL PACKAGE HAVING ENHANCED THERMAL DISSIPATION

    公开(公告)号:US20230013541A1

    公开(公告)日:2023-01-19

    申请号:US17810869

    申请日:2022-07-06

    摘要: A surface acoustic wave device including a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a polymeric roof layer arranged over the piezoelectric layer and interdigital transducer electrode. The polymeric roof layer is spaced apart from the piezoelectric layer to define a cavity to accommodate the interdigital transducer electrode. The polymeric roof layer is supported along a span of the polymeric roof layer by at least one pillar. The thermal conductivity of the pillar is greater than the thermal conductivity of the polymeric roof layer. Related wafer-level packages, radio frequency modules and wireless communication devices are also provided.

    FBAR filter with integrated cancelation circuit

    公开(公告)号:US11038487B2

    公开(公告)日:2021-06-15

    申请号:US16515302

    申请日:2019-07-18

    摘要: An acoustic wave device includes an acoustic wave filter configured to filter a radio frequency signal and a loop circuit coupled to the acoustic wave filter. The loop circuit is configured to generate an anti-phase signal to a target signal at a particular frequency. The loop circuit includes a Lamb wave resonator having a piezoelectric layer and an interdigital transducer electrode disposed on the piezoelectric layer. The piezoelectric layer includes free edges. An edge of the piezoelectric layer is configured to one of suppress or scatter reflections of acoustic waves generated by the interdigital transducer electrode from the edge of the piezoelectric layer.

    ACOUSTIC WAVE DEVICE WITH VELOCITY ADJUSTMENT LAYER

    公开(公告)号:US20210159881A1

    公开(公告)日:2021-05-27

    申请号:US17099603

    申请日:2020-11-16

    IPC分类号: H03H9/02 H03H9/64 H03H9/145

    摘要: Aspects of this disclosure relate to a surface acoustic wave device that includes a first reflector over a piezoelectric layer, a second reflector over the piezoelectric layer, and an interdigital transducer electrode structure over the piezoelectric layer and positioned between the first reflector and the second reflector. The surface acoustic wave device includes a velocity adjustment layer arranged to adjust acoustic velocity in a region of the surface acoustic wave device. The velocity adjustment layer can be a high speed layer or a low speed layer.

    Averaging overcurrent protection
    39.
    发明授权

    公开(公告)号:US10951178B2

    公开(公告)日:2021-03-16

    申请号:US16586711

    申请日:2019-09-27

    IPC分类号: H03F1/52 H03F3/213 H03F1/02

    摘要: In some embodiments, a power amplification system can comprise a current source configured to provide a bias current, a current mirror configured to mirror the bias current, a comparator configured to compare the mirrored bias current to a threshold current, and a transistor at an output of the comparator. The transistor can be configured to be activated in response to the mirrored bias current exceeding the threshold current.

    ACOUSTIC WAVE FILTERS WITH ISOLATION
    40.
    发明申请

    公开(公告)号:US20200313645A1

    公开(公告)日:2020-10-01

    申请号:US16818118

    申请日:2020-03-13

    摘要: Embodiments of this disclosure relate to reducing coupling between acoustic wave resonators. An isolation region of a substrate can be located between acoustic wave resonators. The isolation region can reduce capacitive coupling through the substrate between the acoustic wave resonators. In certain embodiments, the isolation region can be located between acoustic wave resonators of different filters to thereby increase isolation between the filters.