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公开(公告)号：US07790495B2
公开(公告)日：2010-09-07
申请号：US11925170
申请日：2007-10-26
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , G02B6/12004 , H01L31/02327 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.
摘要翻译： 光电子器件包括光电检测器特征，设置在光电检测器特征的至少一部分上方的界面层，以及设置在界面层的至少一部分上的垂直接触。 光电检测器特征包括锗并且可操作以将光信号转换成电信号。 界面层包括镍。 最后，垂直接触可操作地从光电检测器特征传输电信号。
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公开(公告)号：US20140030835A1
公开(公告)日：2014-01-30
申请号：US13586187
申请日：2012-08-15
IPC分类号： H01L33/02
CPC分类号： H01L27/1203
摘要： A semiconductor structure includes a photonic modulator and a field effect transistor on a same substrate. The photonic modulator includes a modulator semiconductor structure and a semiconductor contact structure employing a same semiconductor material as a gate electrode of a field effect transistor. The modulator semiconductor structure includes a lateral p-n junction, and the semiconductor contact structure includes another lateral p-n junction. To form this semiconductor structure, the modulator semiconductor structure in the shape of a waveguide and an active region of a field effect transistor region can be patterned in a semiconductor substrate. A gate dielectric layer is formed on the modulator semiconductor structure and the active region, and is subsequently removed from the modulator semiconductor structure. A semiconductor material layer is deposited, patterned, and doped with patterns to form a gate electrode for the field effect transistor and the semiconductor contact structure for the waveguide.
摘要翻译： 半导体结构包括在相同衬底上的光子调制器和场效应晶体管。 光调制器包括调制器半导体结构和使用与场效应晶体管的栅电极相同的半导体材料的半导体接触结构。 调制器半导体结构包括横向p-n结，并且半导体接触结构包括另一个侧向p-n结。 为了形成该半导体结构，可以在半导体衬底中构造波导形状的调制器半导体结构和场效应晶体管区的有源区。 栅极电介质层形成在调制器半导体结构和有源区上，随后从调制器半导体结构中去除。 沉积，图案化和掺杂半导体材料层以形成场效应晶体管的栅电极和用于波导的半导体接触结构。
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公开(公告)号：US08614116B2
公开(公告)日：2013-12-24
申请号：US13556597
申请日：2012-07-24
申请人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
发明人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , H01L31/1085 , Y02E10/50
摘要： A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.
摘要翻译： 一种形成光检测器件的方法包括：在基片上形成绝缘体层，在绝缘体层和一部分基底上形成锗（Ge）层，在Ge层上形成第二绝缘层，构图Ge层，形成 在所述第二绝缘体层上的封盖绝缘体层和所述第一绝缘体层的一部分，加热所述器件以使所述Ge层结晶，得到单晶Ge层，在所述单晶Ge层中注入n型离子，将所述器件加热至 在单晶Ge层中激活n型离子，以及形成电连接到单晶n型Ge层的电极。
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公开(公告)号：US20120205523A1
公开(公告)日：2012-08-16
申请号：US13455507
申请日：2012-04-25
申请人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
发明人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
IPC分类号： H01L31/08 , H03K17/06 , H01L23/544
CPC分类号： H01L31/107 , H01L31/022408 , H01L31/02327 , H01L31/03529 , Y02E10/50
摘要： A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.
摘要翻译： 半导体光电探测器可以在半导体材料层的高场区域提供电荷载体雪崩倍增。 半导体电流放大器可以通过在高场区域附近的冲击电离提供电流放大。 多个金属电极形成在半导体材料层的表面上并被电偏置以产生不均匀的高电场，其中高电场强度加速雪崩电子 - 空穴对产生，其被用作有效的雪崩倍增 光电检测机制或雪崩冲击电离电流放大机制。
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35.发明申请FABRICATING PHOTONICS DEVICES FULLY INTEGRATED INTO A CMOS MANUFACTURING PROCESS 有权制造光电器件完全集成到CMOS制造工艺公开(公告)号：US20120129302A1
公开(公告)日：2012-05-24
申请号：US12951597
申请日：2010-11-22
申请人： Solomon Assefa , William M.J. Green , Yurii A. Vlasov , Min Yang
发明人： Solomon Assefa , William M.J. Green , Yurii A. Vlasov , Min Yang
IPC分类号： H01L21/782 , H01L21/762
CPC分类号： H01L21/8238 , G02B6/136 , H01L21/26513 , H01L21/2658 , H01L21/76283 , H01L31/02327 , H01L31/103 , H01L31/105
摘要： Disclosed are process enhancements to fully integrate the processing of a photonics device into a CMOS manufacturing process flow. A CMOS wafer may be divided into different portions. One of the portions is for the CMOS devices and one or more other portions are for the photonics devices. The photonics devices include a ridged waveguide and a germanium photodetector. The germanium photodetector may utilize a seeded crystallization from melt process so there is more flexibility in the processing of the germanium photodetector.
摘要翻译： 公开了将光子器件的处理完全整合到CMOS制造工艺流程中的过程增强。 CMOS晶片可以被分成不同的部分。 其中一个部分用于CMOS器件，一个或多个其它部分用于光子器件。 光子器件包括脊状波导和锗光电检测器。 锗光电探测器可以利用来自熔融法的接种结晶，因此在锗光电探测器的处理中具有更大的灵活性。
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公开(公告)号：US07999344B2
公开(公告)日：2011-08-16
申请号：US12775084
申请日：2010-05-06
IPC分类号： H01L31/00
CPC分类号： H01L31/1808 , G02B6/12004 , H01L31/02327 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.
摘要翻译： 光电子器件包括光电检测器特征，设置在光电检测器特征的至少一部分上方的界面层，以及设置在界面层的至少一部分上的垂直接触。 光电检测器特征包括锗并且可操作以将光信号转换成电信号。 界面层包括镍。 最后，垂直接触可操作地从光电检测器特征传输电信号。
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公开(公告)号：US09134479B2
公开(公告)日：2015-09-15
申请号：US13603811
申请日：2012-09-05
CPC分类号： G02B6/12023 , G02B6/2793 , G02B6/293
摘要： An optical demultiplexing device includes a first portion operative to receive an input optical signal having a first polarization, a second polarization and multiple channels, and split the input optical signal into a first optical signal having the first polarization and a second optical signal having the first polarization, and an optical demultiplexing portion communicatively connected to the polarization splitter portion, the optical demultiplexing portion operative to receive a combination of the first optical signal and the second optical signal, and output each channel of the first optical signal and the second optical signal to a photodetector device corresponding to each channel.
摘要翻译： 光解复用装置包括第一部分，其操作以接收具有第一偏振光，第二偏振光和多通道的输入光信号，并将输入光信号分离为具有第一偏振的第一光信号和具有第一偏振的第二光信号 偏振光，以及通信地连接到偏振分离器部分的光解复用部分，光解复用部分用于接收第一光信号和第二光信号的组合，并将第一光信号和第二光信号的每个通道输出到 对应于每个通道的光电检测器装置。
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公开(公告)号：US08948548B2
公开(公告)日：2015-02-03
申请号：US13611229
申请日：2012-09-12
IPC分类号： G02B6/12
CPC分类号： G02B6/12023 , G02B6/2793 , G02B6/293
摘要： A method for demultiplexing an optical signal includes receiving a multi polarization optical signal, separating the multi polarization optical signal into a first polarization optical signal and a second polarization optical signal, rotating a polarization of the first polarization optical signal to match a polarization of the second polarization optical signal, routing the first polarization optical signal and the second polarization optical signal to a common demultiplexing device, outputting a channel of the first polarization optical signal and the second polarization optical signal to a common photodetector.
摘要翻译： 一种用于解复用光信号的方法包括：接收多偏振光信号，将多偏振光信号分离为第一偏振光信号和第二偏振光信号，旋转第一偏振光信号的偏振以匹配第二偏振光信号的偏振 偏振光信号，将第一偏振光信号和第二偏振光信号路由到公共解复用器件，将第一偏振光信号和第二偏振光信号的通道输出到公共光电检测器。
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公开(公告)号：US20140064729A1
公开(公告)日：2014-03-06
申请号：US13603811
申请日：2012-09-05
IPC分类号： H04J14/06
CPC分类号： G02B6/12023 , G02B6/2793 , G02B6/293
摘要： An optical demultiplexing device includes a first portion operative to receive an input optical signal having a first polarization, a second polarization and multiple channels, and split the input optical signal into a first optical signal having the first polarization and a second optical signal having the first polarization, and an optical demultiplexing portion communicatively connected to the polarization splitter portion, the optical demultiplexing portion operative to receive a combination of the first optical signal and the second optical signal, and output each channel of the first optical signal and the second optical signal to a photodetector device corresponding to each channel.
摘要翻译： 光解复用装置包括第一部分，其操作以接收具有第一偏振光，第二偏振光和多通道的输入光信号，并将输入光信号分离为具有第一偏振的第一光信号和具有第一偏振的第二光信号 偏振光，以及通信地连接到偏振分离器部分的光解复用部分，光解复用部分用于接收第一光信号和第二光信号的组合，并将第一光信号和第二光信号的每个通道输出到 对应于每个通道的光电检测器装置。
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公开(公告)号：US20140064656A1
公开(公告)日：2014-03-06
申请号：US13611229
申请日：2012-09-12
IPC分类号： G02B6/00
CPC分类号： G02B6/12023 , G02B6/2793 , G02B6/293
摘要： A method for demultiplexing an optical signal includes receiving a multi polarization optical signal, separating the multi polarization optical signal into a first polarization optical signal and a second polarization optical signal, rotating a polarization of the first polarization optical signal to match a polarization of the second polarization optical signal, routing the first polarization optical signal and the second polarization optical signal to a common demultiplexing device, outputting a channel of the first polarization optical signal and the second polarization optical signal to a common photodetector.
摘要翻译： 一种用于解复用光信号的方法包括：接收多偏振光信号，将多偏振光信号分离为第一偏振光信号和第二偏振光信号，旋转第一偏振光信号的偏振以匹配第二偏振光信号的偏振 偏振光信号，将第一偏振光信号和第二偏振光信号路由到公共解复用器件，将第一偏振光信号和第二偏振光信号的通道输出到公共光电检测器。
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