公开(公告)号：US20130181317A1

公开(公告)日：2013-07-18

申请号：US13713398

申请日：2012-12-13

申请人： Sony Corporation

发明人： Satoru Wakiyama ,  Hiroshi Ozaki

IPC分类号： H01L31/02 ,  H01L21/768 ,  H01L23/48

CPC分类号： H01L27/14636 ,  H01L21/2885 ,  H01L21/76805 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/5329 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/02005 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor unit includes: a first device substrate including a first semiconductor substrate and a first wiring layer, in which the first wiring layer is provided on one surface side of the first semiconductor substrate; a second device substrate including a second semiconductor substrate and a second wiring layer, in which the second device substrate is bonded to the first device substrate, and the second wiring layer is provided on one surface side of the second semiconductor substrate; a through-electrode penetrating the first device substrate and a part or all of the second device substrate, and electrically connecting the first wiring layer and the second wiring layer to each other; and an insulating layer provided in opposition to the through-electrode, and penetrating one of the first semiconductor substrate and the second semiconductor substrate.

摘要翻译： 半导体单元包括：第一器件衬底，其包括第一半导体衬底和第一布线层，其中第一布线层设置在第一半导体衬底的一个表面侧上; 包括第二半导体衬底和第二布线层的第二器件衬底，其中所述第二器件衬底接合到所述第一器件衬底，并且所述第二布线层设置在所述第二半导体衬底的一个表面侧上; 穿透第一器件基板的透光电极和第二器件基板的一部分或全部，并且将第一布线层和第二布线层彼此电连接; 以及设置成与所述贯通电极相对的绝缘层，并穿过所述第一半导体衬底和所述第二半导体衬底之一。