公开(公告)号：US10600838B2

公开(公告)日：2020-03-24

申请号：US15118575

申请日：2015-04-15

Applicant: SONY CORPORATION

Inventor： Satoru Wakiyama ,  Naoki Jyo ,  Kan Shimizu ,  Toshihiko Hayashi ,  Takuya Nakamura

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48

Abstract: There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

公开(公告)号：US10084003B2

公开(公告)日：2018-09-25

申请号：US15454560

申请日：2017-03-09

Applicant: SONY CORPORATION

Inventor： Satoru Wakiyama ,  Taizo Takachi

IPC: H01L31/0203 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/041

CPC classification number: H01L27/14618 ,  H01L27/14632 ,  H01L27/14685 ,  H01L31/02165 ,  H01L31/041 ,  H01L31/18 ,  H01L2224/13 ,  H01L2224/94 ,  Y02E10/50

Abstract: A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

公开(公告)号：US09647146B2

公开(公告)日：2017-05-09

申请号：US14189068

申请日：2014-02-25

Applicant: Sony Corporation

Inventor： Satoru Wakiyama ,  Taizo Takachi

IPC: H01L31/0203 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/041 ,  H01L27/146

CPC classification number: H01L31/02165 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14685 ,  H01L31/041 ,  H01L31/18 ,  H01L2224/13 ,  H01L2224/94 ,  Y02E10/50

Abstract: A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

公开(公告)号：US09524925B2

公开(公告)日：2016-12-20

申请号：US15097093

申请日：2016-04-12

Applicant: Sony Corporation

Inventor： Satoru Wakiyama ,  Masaki Okamoto ,  Yutaka Ooka ,  Reijiroh Shohji ,  Yoshifumi Zaizen ,  Kazunori Nagahata ,  Masaki Haneda

IPC: H01L23/48 ,  H01L21/768 ,  H01L21/306 ,  H01L21/311 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L27/146

CPC classification number: H01L25/0657 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/32145 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is provided a method for manufacturing a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

Abstract translation: 提供一种制造半导体器件的方法，该半导体器件包括：第一半导体基底基板，接合到第一半导体基底基板的第一表面侧上的第二半导体基底基板，形成为从第二表面侧穿透的通孔 第一半导体基底基板的第二半导体基底基板上的布线层，以及围绕形成在第一半导体基板的内部的贯通电极的周围的绝缘层。

公开(公告)号：US20140357025A1

公开(公告)日：2014-12-04

申请号：US14462776

申请日：2014-08-19

Applicant: Sony Corporation

Inventor： Satoru Wakiyama

IPC: H01L21/56 ,  H01L23/00 ,  H01L23/544

CPC classification number: H01L25/0657 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3142 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/051 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/11015 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2224/14131 ,  H01L2224/14515 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/26135 ,  H01L2224/26145 ,  H01L2224/26165 ,  H01L2224/27334 ,  H01L2224/27416 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48 ,  H01L2224/73104 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81139 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/83007 ,  H01L2224/8313 ,  H01L2224/83132 ,  H01L2224/83141 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/92 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device including a semiconductor element; a pad electrode that is formed on the semiconductor element; an alignment mark that is formed on the semiconductor element; a connection electrode that is formed on the pad electrode; and an underfill resin that is formed to cover the connection electrode. The height of the alignment mark from the semiconductor element is greater than that of the connection electrode.

Abstract translation: 一种包括半导体元件的半导体器件; 形成在半导体元件上的焊盘电极; 形成在半导体元件上的对准标记; 形成在焊盘电极上的连接电极; 以及形成为覆盖连接电极的底部填充树脂。 来自半导体元件的对准标记的高度大于连接电极的高度。

公开(公告)号：US20140284749A1

公开(公告)日：2014-09-25

申请号：US14297779

申请日：2014-06-06

Applicant: Sony Corporation

Inventor： Satoru Wakiyama ,  Hiroshi Ozaki

IPC: H01L23/31 ,  H01L27/146 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L27/14636 ,  H01L21/56 ,  H01L21/563 ,  H01L23/31 ,  H01L24/05 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/14515 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/29011 ,  H01L2224/29035 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83051 ,  H01L2224/83104 ,  H01L2224/83365 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15788 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Disclosed herein is a semiconductor device including: a first semiconductor chip having an electronic circuit section and a first connecting section formed on one surface thereof; a second semiconductor chip having a second connecting section formed on one surface thereof, the second semiconductor chip being mounted on the first semiconductor chip with the first and the second connecting sections connected to each other by a bump; a dam formed to fill a gap between the first and the second semiconductor chips on a part of an outer edge of the second semiconductor chip, the part of the outer edge being on a side of a region of formation of the electronic circuit section; and an underfill resin layer filled into the gap, protrusion of the resin layer from the outer edge of the second semiconductor chip to a side of the electronic circuit section being prevented by the dam.

Abstract translation: 本发明公开了一种半导体器件，包括：具有电子电路部分的第一半导体芯片和在其一个表面上形成的第一连接部分; 具有在其一个表面上形成的第二连接部分的第二半导体芯片，所述第二半导体芯片安装在所述第一半导体芯片上，所述第一和第二连接部分通过凸块相互连接; 形成为在所述第二半导体芯片的外缘的一部分上填充所述第一和第二半导体芯片之间的间隙的坝，所述外边缘的一部分位于所述电子电路部的形成区域的一侧; 并且填充到间隙中的底部填充树脂层，树脂层从第二半导体芯片的外边缘突出到电子电路部分的侧面被大坝阻止。

公开(公告)号：US10373934B2

公开(公告)日：2019-08-06

申请号：US15887242

申请日：2018-02-02

Applicant: Sony Corporation

Inventor： Satoru Wakiyama ,  Masaki Okamoto ,  Yutaka Ooka ,  Reijiroh Shohji ,  Yoshifumi Zaizen ,  Kazunori Nagahata ,  Masaki Haneda

IPC: H01L23/48 ,  H01L25/065 ,  H01L27/146 ,  H01L21/768 ,  H01L21/306 ,  H01L25/00 ,  H01L21/311 ,  H01L23/00

Abstract: There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

公开(公告)号：US09922961B2

公开(公告)日：2018-03-20

申请号：US15354871

申请日：2016-11-17

Applicant: Sony Corporation

Inventor： Satoru Wakiyama ,  Masaki Okamoto ,  Yutaka Ooka ,  Reijiroh Shohji ,  Yoshifumi Zaizen ,  Kazunori Nagahata ,  Masaki Haneda

IPC: H01L23/48 ,  H01L25/065 ,  H01L27/146 ,  H01L21/768 ,  H01L21/306 ,  H01L25/00 ,  H01L21/311 ,  H01L23/00

CPC classification number: H01L25/0657 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/32145 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

公开(公告)号：US09691805B2

公开(公告)日：2017-06-27

申请号：US15010992

申请日：2016-01-29

Applicant: Sony Corporation

Inventor： Satoru Wakiyama ,  Hiroshi Ozaki

IPC: H01L27/146 ,  H01L21/56 ,  H01L25/065 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L27/14636 ,  H01L21/56 ,  H01L21/563 ,  H01L23/31 ,  H01L24/05 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14683 ,  H01L27/1469 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/14515 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/29011 ,  H01L2224/29035 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83051 ,  H01L2224/83104 ,  H01L2224/83365 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15788 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Disclosed herein is a semiconductor device including: a first semiconductor chip having an electronic circuit section and a first connecting section formed on one surface thereof; a second semiconductor chip having a second connecting section formed on one surface thereof, the second semiconductor chip being mounted on the first semiconductor chip with the first and the second connecting sections connected to each other by a bump; a dam formed to fill a gap between the first and the second semiconductor chips on a part of an outer edge of the second semiconductor chip, the part of the outer edge being on a side of a region of formation of the electronic circuit section; and an underfill resin layer filled into the gap, protrusion of the resin layer from the outer edge of the second semiconductor chip to a side of the electronic circuit section being prevented by the dam.

公开(公告)号：US20160247746A1

公开(公告)日：2016-08-25

申请号：US15097093

申请日：2016-04-12

Applicant: Sony Corporation

Inventor： Satoru Wakiyama ,  Masaki Okamoto ,  Yutaka Ooka ,  Reijiroh Shohji ,  Yoshifumi Zaizen ,  Kazunori Nagahata ,  Masaki Haneda

IPC: H01L23/48 ,  H01L21/306 ,  H01L27/146 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L25/0657 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/32145 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is provided a method for manufacturing a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

Abstract translation: 提供一种制造半导体器件的方法，该半导体器件包括：第一半导体基底基板，接合到第一半导体基底基板的第一表面侧上的第二半导体基底基板，形成为从第二表面侧穿透的通孔 第一半导体基底基板的第二半导体基底基板上的布线层，以及围绕形成在第一半导体基板的内部的贯通电极的周围的绝缘层。