公开(公告)号：US11063020B2

公开(公告)日：2021-07-13

申请号：US16521215

申请日：2019-07-24

申请人： Sony Corporation

发明人： Satoru Wakiyama ,  Masaki Okamoto ,  Yutaka Ooka ,  Reijiroh Shohji ,  Yoshifumi Zaizen ,  Kazunori Nagahata ,  Masaki Haneda

IPC分类号： H01L25/065 ,  H01L21/768 ,  H01L27/146 ,  H01L23/48 ,  H01L21/306 ,  H01L25/00 ,  H01L21/311 ,  H01L23/00

摘要： There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

公开(公告)号：US10153314B2

公开(公告)日：2018-12-11

申请号：US15531841

申请日：2015-12-02

申请人： SONY CORPORATION

发明人： Satoru Wakiyama

IPC分类号： H01L27/14 ,  H01L27/146

摘要： The present technology relates to a semiconductor apparatus, a solid-state image pickup device, an image pickup apparatus, and an electronic apparatus capable of improving impedance characteristics while preventing an occurrence of a flare and an interference due to a bonding jig, and achieving downsizing an apparatus. By aligning the heights of a cover glass and a semiconductor device, a distance between the cover glass and the semiconductor device is set to be minimum, and thus it is possible to suppress an occurrence of a flare due to incident light reflected on a side surface of the semiconductor device, and improve the impedance characteristics of the semiconductor device and the semiconductor image pickup device. Further, the interference of the jig used for the semiconductor device is reduced. The present technology can be applied to a CMOS image sensor.

公开(公告)号：US10026770B2

公开(公告)日：2018-07-17

申请号：US15630783

申请日：2017-06-22

申请人： Sony Corporation

发明人： Satoru Wakiyama ,  Hiroshi Ozaki

IPC分类号： H01L27/146

摘要： Disclosed herein is a semiconductor device including: a first semiconductor chip having an electronic circuit section and a first connecting section formed on one surface thereof; a second semiconductor chip having a second connecting section formed on one surface thereof, the second semiconductor chip being mounted on the first semiconductor chip with the first and the second connecting sections connected to each other by a bump; a dam formed to fill a gap between the first and the second semiconductor chips on a part of an outer edge of the second semiconductor chip, the part of the outer edge being on a side of a region of formation of the electronic circuit section; and an underfill resin layer filled into the gap, protrusion of the resin layer from the outer edge of the second semiconductor chip to a side of the electronic circuit section being prevented by the dam.

公开(公告)号：US09941322B2

公开(公告)日：2018-04-10

申请号：US14919920

申请日：2015-10-22

申请人： SONY CORPORATION

发明人： Satoru Wakiyama ,  Hiroshi Ozaki

IPC分类号： H01L21/768 ,  H01L27/146 ,  H01L31/02 ,  H01L23/48 ,  H01L21/288 ,  H01L23/532

CPC分类号： H01L27/14636 ,  H01L21/2885 ,  H01L21/76805 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53209 ,  H01L23/53228 ,  H01L23/5329 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/02005 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor unit includes: a first device substrate including a first semiconductor substrate and a first wiring layer, in which the first wiring layer is provided on one surface side of the first semiconductor substrate; a second device substrate including a second semiconductor substrate and a second wiring layer, in which the second device substrate is bonded to the first device substrate, and the second wiring layer is provided on one surface side of the second semiconductor substrate; a through-electrode penetrating the first device substrate and a part or all of the second device substrate, and electrically connecting the first wiring layer and the second wiring layer to each other; and an insulating layer provided in opposition to the through-electrode, and penetrating one of the first semiconductor substrate and the second semiconductor substrate.

公开(公告)号：US20150179546A1

公开(公告)日：2015-06-25

申请号：US14409634

申请日：2013-06-19

申请人： SONY CORPORATION

发明人： Satoru Wakiyama ,  Masaki Okamoto ,  Yutaka Ooka ,  Reijiroh Shohji ,  Yoshifumi Zaizen ,  Kazunori Nagahata ,  Masaki Haneda

IPC分类号： H01L23/48 ,  H01L21/306 ,  H01L21/768 ,  H01L25/065 ,  H01L25/00

CPC分类号： H01L25/0657 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/32145 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

摘要翻译： 提供了一种半导体器件，其包括第一半导体基底基板，接合到第一半导体基底基板的第一表面侧的第二半导体基底基板，形成为从第一半导体基板的第二表面侧穿透的通孔 基底基板连接到第二半导体基底基板上的布线层，以及包围形成在第一半导体基底基板内部的贯通电极的周围的绝缘层。

公开(公告)号：US10600838B2

公开(公告)日：2020-03-24

申请号：US15118575

申请日：2015-04-15

申请人： SONY CORPORATION

发明人： Satoru Wakiyama ,  Naoki Jyo ,  Kan Shimizu ,  Toshihiko Hayashi ,  Takuya Nakamura

IPC分类号： H01L27/146 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48

摘要： There is provided semiconductor devices and methods of forming the same, the semiconductor devices including: a first semiconductor element having a first electrode; a second semiconductor element having a second electrode; a Sn-based micro-solder bump formed on the second electrode; and a concave bump pad including the first electrode opposite to the micro-solder bump, where the first electrode is connected to the second electrode via the micro-solder bump and the concave bump pad.

公开(公告)号：US10084003B2

公开(公告)日：2018-09-25

申请号：US15454560

申请日：2017-03-09

申请人： SONY CORPORATION

发明人： Satoru Wakiyama ,  Taizo Takachi

IPC分类号： H01L31/0203 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/041

CPC分类号： H01L27/14618 ,  H01L27/14632 ,  H01L27/14685 ,  H01L31/02165 ,  H01L31/041 ,  H01L31/18 ,  H01L2224/13 ,  H01L2224/94 ,  Y02E10/50

摘要： A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

公开(公告)号：US09647146B2

公开(公告)日：2017-05-09

申请号：US14189068

申请日：2014-02-25

申请人： Sony Corporation

发明人： Satoru Wakiyama ,  Taizo Takachi

IPC分类号： H01L31/0203 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/041 ,  H01L27/146

CPC分类号： H01L31/02165 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14685 ,  H01L31/041 ,  H01L31/18 ,  H01L2224/13 ,  H01L2224/94 ,  Y02E10/50

摘要： A method of manufacturing a semiconductor device includes: forming, on a cover glass, a film having a predetermined specific gravity and configured to shield an alpha ray that arises from the cover glass; and bonding the cover glass on which the film is formed and an image pickup device, by filling a transparent resin between the cover glass and the image pickup device.

公开(公告)号：US09524925B2

公开(公告)日：2016-12-20

申请号：US15097093

申请日：2016-04-12

申请人： Sony Corporation

发明人： Satoru Wakiyama ,  Masaki Okamoto ,  Yutaka Ooka ,  Reijiroh Shohji ,  Yoshifumi Zaizen ,  Kazunori Nagahata ,  Masaki Haneda

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/306 ,  H01L21/311 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L27/146

CPC分类号： H01L25/0657 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/32145 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a method for manufacturing a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

摘要翻译： 提供一种制造半导体器件的方法，该半导体器件包括：第一半导体基底基板，接合到第一半导体基底基板的第一表面侧上的第二半导体基底基板，形成为从第二表面侧穿透的通孔 第一半导体基底基板的第二半导体基底基板上的布线层，以及围绕形成在第一半导体基板的内部的贯通电极的周围的绝缘层。

公开(公告)号：US20140357025A1

公开(公告)日：2014-12-04

申请号：US14462776

申请日：2014-08-19

申请人： Sony Corporation

发明人： Satoru Wakiyama

IPC分类号： H01L21/56 ,  H01L23/00 ,  H01L23/544

CPC分类号： H01L25/0657 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3142 ,  H01L23/544 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/051 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/11015 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13014 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13166 ,  H01L2224/14131 ,  H01L2224/14515 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/26135 ,  H01L2224/26145 ,  H01L2224/26165 ,  H01L2224/27334 ,  H01L2224/27416 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48 ,  H01L2224/73104 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81139 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/83007 ,  H01L2224/8313 ,  H01L2224/83132 ,  H01L2224/83141 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/92 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device including a semiconductor element; a pad electrode that is formed on the semiconductor element; an alignment mark that is formed on the semiconductor element; a connection electrode that is formed on the pad electrode; and an underfill resin that is formed to cover the connection electrode. The height of the alignment mark from the semiconductor element is greater than that of the connection electrode.

摘要翻译： 一种包括半导体元件的半导体器件; 形成在半导体元件上的焊盘电极; 形成在半导体元件上的对准标记; 形成在焊盘电极上的连接电极; 以及形成为覆盖连接电极的底部填充树脂。 来自半导体元件的对准标记的高度大于连接电极的高度。