公开(公告)号：US20050041238A1

公开(公告)日：2005-02-24

申请号：US10642621

申请日：2003-08-19

Applicant: Audunn Ludviksson ,  Steven Fink

Inventor： Audunn Ludviksson ,  Steven Fink

IPC: G01N21/64 ,  H01L21/00 ,  G01N21/00

CPC classification number: H01J37/32862 ,  G01N21/64 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/67253

Abstract: A method and system are provided for monitoring erosion of system components in a plasma processing system. The system components contain a gas emitter that can release a sensor gas into a plasma process environment. The sensor gas can produce characteristic fluorescent light emission when exposed to a plasma. The method can evaluate erosion of system components in a plasma, by monitoring fluorescent light emission and a mass signal from the sensor gas. Consumable system components that can be monitored using the method include rings, shields, electrodes, baffles, and liners.

Abstract translation: 提供了一种用于监测等离子体处理系统中的系统部件的侵蚀的方法和系统。 系统组件包含可将传感器气体释放到等离子体处理环境中的气体发射器。 当暴露于等离子体时，传感器气体可以产生特征性的荧光发射。 该方法可以通过监测荧光发射和来自传感器气体的质量信号来评估等离子体中系统组分的侵蚀。 可以使用该方法监测的消耗品系统组件包括环，屏蔽，电极，挡板和衬垫。

公开(公告)号：USD575833S1

公开(公告)日：2008-08-26

申请号：US29299201

申请日：2007-12-20

Applicant: Steven Fink ,  Neil Hamilton ,  Michael Hoeting ,  Yannick Poirier ,  Craig Johnson

Designer： Steven Fink ,  Neil Hamilton ,  Michael Hoeting ,  Yannick Poirier ,  Craig Johnson

公开(公告)号：US20070181064A1

公开(公告)日：2007-08-09

申请号：US11583033

申请日：2006-10-19

Applicant: Steven Fink

Inventor： Steven Fink

IPC: C23F1/00 ,  C23C16/00

CPC classification number: H01J37/321

Abstract: A plasma source assembly including an outer shield, a dielectric chamber wall, and a helical coil provided between the outer shield and the dielectric chamber wall. The plasma source assembly also includes a coil support assembly configured to facilitate repeatable performance of the helical coil. Preferably, the assembly includes a plenum cooling plate that is configured to supply cooling fluid to a first cooling rod provided within a resonator cavity defined by the chamber wall and the outer shield, and receive cooling fluid from a second cooling rod provided within the resonator cavity. The assembly preferably also includes a spacer provided between the first cooling rod and the second cooling rod, and coil insulators having holes configured to receive the helical coil.

公开(公告)号：US20070113976A1

公开(公告)日：2007-05-24

申请号：US11654568

申请日：2007-01-18

Applicant: Andrej Mitrovic ,  Maolin Long ,  Paul Moroz ,  Steven Fink ,  William Jones

Inventor： Andrej Mitrovic ,  Maolin Long ,  Paul Moroz ,  Steven Fink ,  William Jones

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67248 ,  G05D23/1934 ,  H01J37/32522 ,  H01L21/67069 ,  H01L21/67109

Abstract: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

公开(公告)号：US07147793B2

公开(公告)日：2006-12-12

申请号：US10479458

申请日：2002-06-06

Applicant: Steven Fink

Inventor： Steven Fink

IPC: C23C14/34 ,  C23F1/00

CPC classification number: H01J37/32871 ,  H01J37/32623 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/67069

Abstract: An etch profile tailoring system (100), for use with an etching process carried out on a wafer (130), has a scavenging plate (170) with a baseline etch profile, and at least one etch profile tuning structure (such as a plug) (160) replaceably disposed with respect to the scavenging plate (170) and configured to alter the baseline etch profile during the etching process so as to arrive at a desired etch profile. A method of performing maintenance on an etch profile tailoring system (100) involves the steps of performing an etching process on a wafer in accordance with a desired etch profile, determining whether or not maintenance should be performed, and (if the maintenance decision indicates that maintenance should be performed) replacing with a second plug before conducting an etching process on additional wafers.

Abstract translation: 与在晶片（130）上执行的蚀刻工艺一起使用的蚀刻轮廓定制系统（100）具有具有基线蚀刻轮廓的扫气板（170）和至少一个蚀刻轮廓调谐结构（诸如插头 ）（160）相对于扫气板（170）可替换地设置并且被配置为在蚀刻过程期间改变基线蚀刻轮廓，以便达到期望的蚀刻轮廓。 在蚀刻轮廓定制系统（100）上执行维护的方法包括以下步骤：根据期望的蚀刻轮廓对晶片进行蚀刻处理，确定是否应执行维护，以及（如果维护决定指示 在进行另外的晶片的蚀刻处理之前，应该用第二个插头替换维护。

公开(公告)号：US20060272920A1

公开(公告)日：2006-12-07

申请号：US11503154

申请日：2006-08-14

Applicant: Steven Fink

Inventor： Steven Fink

IPC: F16D71/04

CPC classification number: H01L21/67069 ,  H01L21/68 ,  H01L21/68792 ,  Y10T74/1836

Abstract: A multi-stop mechanism for providing multiple stop positions between first and second objects that are movable into and out of contact with one another. The multi-stop mechanism of the present invention includes a housing which secures the multi stop mechanism to the first object and/or the second object, a rotatble shaft rotatably mounted to the housing, and plurality of stops located on the rotatable shaft. When the shaft is rotated within the housing, the stops are rotated to different positions relative to the housing. As such, the rotatable shaft positions one of the stops to contact the first or second object that the multi-stop mechanism is not attached to.

Abstract translation: 一种用于在第一和第二物体之间提供多个停止位置的多功能机构，其可移动进入或离开彼此接触。 本发明的多重机构包括将多重停止机构固定到第一物体和/或第二物体的壳体，可旋转地安装到壳体的旋转轴以及位于可旋转轴上的多个止动件。 当轴在壳体内旋转时，止动件相对于壳体旋转到不同的位置。 这样，可旋转轴将止动件之一定位成与多个止动机构未附接到的第一或第二物体接触。

公开(公告)号：US20060213617A1

公开(公告)日：2006-09-28

申请号：US11090703

申请日：2005-03-25

Applicant: Steven Fink

Inventor： Steven Fink

IPC: C23F1/00

CPC classification number: H01L21/67069 ,  H01J37/32091 ,  H01J37/32495 ,  H01J37/32532

Abstract: An upper electrode assembly (UEL) is supported in an insulator in an opening in the top of an etch chamber in which large diameter substrates are processed with a flange of the UEL overlying the chamber wall around the opening with the insulator in between so that the insulator experiences primarily compressive and minimal shear loads. The electrode nonetheless fills the otherwise vacuum space between the UEL and the chamber wall above a shield ring that covers the insulator and portions of the adjacent UEL face and chamber wall.

Abstract translation: 上部电极组件（UEL）被支撑在蚀刻室顶部的开口中的绝缘体中，其中大直径基板被处理，其中UEL的凸缘覆盖围绕开口的室壁，绝缘体在其间，使得 绝缘体主要承受压缩和最小剪切载荷。 然而，电极填充UEL和覆盖绝缘体的屏蔽环之上的UEL和室壁之间的真空空间，并且相邻的UEL面和室壁的部分。

公开(公告)号：US20060191484A1

公开(公告)日：2006-08-31

申请号：US11065065

申请日：2005-02-25

Applicant: Andrej Mitrovic ,  Steven Fink

Inventor： Andrej Mitrovic ,  Steven Fink

IPC: C23F1/00 ,  C23C16/00

CPC classification number: H01L21/67069 ,  C23F4/00 ,  H01J37/32477

Abstract: An apparatus for processing semiconductors includes a processing chamber including a plurality of chamber walls, a substrate holder, positioned within the processing chamber and configured to support the substrate, and a linear displacement device, coupled between a base wall of the plurality of walls and the substrate holder and configured to move the substrate holder relative to the base wall. A shielding part extending from the substrate holder to be in close parallel relation with at least one of the plurality of walls such that a first area of the processing chamber is substantially shielded from a processing environment to which the substrate is exposed.

Abstract translation: 一种用于处理半导体的设备包括处理室，其包括多个室壁，位于处理室内并被配置为支撑衬底的衬底保持器，以及线性位移装置，其连接在多个壁的底壁和 衬底保持器并且构造成相对于底壁移动衬底保持器。 从衬底保持器延伸成与多个壁中的至少一个紧密平行的屏蔽部分，使得处理室的第一区域基本上与衬底暴露于的处理环境屏蔽。

公开(公告)号：US20050263070A1

公开(公告)日：2005-12-01

申请号：US10852450

申请日：2004-05-25

Applicant: Steven Fink

Inventor： Steven Fink

IPC: H01J37/32 ,  H05H1/24 ,  C23C16/00

CPC classification number: H01J37/32623

Abstract: A plasma apparatus which includes a vacuum chamber provided with an exhaust port and a chuck assembly disposed inside the vacuum chamber. The plasma apparatus also includes a plasma confinement and pressure control apparatus disposed proximate to the substrate. The plasma confinement and pressure control apparatus includes a plurality of ring members disposed adjacent to each other in a superposed fashion and a plurality of lift assemblies disposed along a circumference of the plurality of ring members. The plurality of lift assemblies are arranged to support the plurality of ring members. The plasma confinement apparatus further includes at least one lift mechanism connected to the lift assemblies. The lift mechanism is configured to translate at least one of the plurality of ring members relative to a reference plane and to tilt at least one of the plurality of the ring members relative to the reference plane.

Abstract translation: 一种等离子体装置，其包括设置有排气口的真空室和设置在真空室内的卡盘组件。 等离子体装置还包括靠近基板设置的等离子体限制和压力控制装置。 等离子体限制和压力控制装置包括以叠加方式彼此相邻设置的多个环构件和沿着多个环构件的圆周设置的多个提升组件。 多个提升组件布置成支撑多个环构件。 等离子体限制装置还包括连接到提升组件的至少一个提升机构。 升降机构构造成使多个环形构件中的至少一个相对于参考平面平移并使多个环构件中的至少一个相对于参考平面倾斜。

公开(公告)号：US20050118927A1

公开(公告)日：2005-06-02

申请号：US10976939

申请日：2004-10-29

Applicant: Michael Hoeting ,  Steven Hurt ,  Steven Fink

Inventor： Michael Hoeting ,  Steven Hurt ,  Steven Fink

IPC: A63H13/02 ,  A63H13/00

CPC classification number: A63H13/02

Abstract: An animated toy effectively mimics human dance steps such as the Hokey Pokey with upper and lower halves of the torso pivoting about a diagonal waist laterally upwardly sloping to the left so that a left arm may be put forward and back. A spin/shake drive mechanism in a left leg selectively rotates the toy about a spin disk when activated in one direction and rotating a shake cam against the upper half of the torso when activated in another direction, thereby achieving each portion of the dance.

Abstract translation: 一个动画玩具有效地模仿人类的舞步，例如Hokey Pokey，身体的上半部和下半部围绕横向向左倾斜的对角腰部枢转，左臂可以向前和向后倾斜。 左腿中的旋转/摇动驱动机构在一个方向上被激活时选择性地使玩具围绕旋转盘旋转，并且当另一个方向被激活时，使摇动凸轮相对于躯干的上半部旋转，从而实现舞蹈的每一部分。