公开(公告)号：US20070246163A1

公开(公告)日：2007-10-25

申请号：US11410784

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/5096 ,  C23C16/458 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32165

摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, an inductively coupled plasma source power applicator overlying the ceiling, and an RF power generator coupled to the inductively coupled source power applicator, and a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and a VHF power generator coupled to the capacitively coupled source power applicator. The reactor further includes a plasma bias power applicator comprising a bias power electrode in the workpiece support and at least a first RF bias power generator coupled to the plasma bias power applicator, process gas distribution apparatus comprising a gas distribution showerhead in the ceiling, a vacuum pump for evacuating the chamber, and a first controller capable of adjusting the relative amounts of power simultaneously coupled to plasma in the chamber by the inductively coupled plasma source power applicator and the capacitively coupled plasma source power applicator.

摘要翻译： 用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，覆盖天花板的电感耦合等离子体源功率施加器，以及耦合到感应耦合的RF功率发生器 源电源施加器和电容耦合的等离子体源功率施加器，其包括源功率电极，其以下之一：（a）天花板（b）工件支撑件以及耦合到电容耦合的源功率施加器的VHF发电机。 反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的至少第一RF偏置功率发生器，处理气体分配装置包括天花板中的气体分配喷头，真空 泵，以及第一控制器，其能够通过电感耦合等离子体源功率施加器和电容耦合等离子体源功率施加器来调节同时耦合到腔室中的等离子体的功率的相对量。

公开(公告)号：US20070246162A1

公开(公告)日：2007-10-25

申请号：US11410864

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23F1/00

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321

摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, an inductively coupled plasma source power applicator overlying the ceiling, and an RF power generator coupled to the inductively coupled source power applicator, a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode. In a preferred embodiment, the reactor further includes a plasma bias power applicator including a bias power electrode in the workpiece support and one or more RF bias power generators of different frequencies coupled to the plasma bias power applicator.

摘要翻译： 用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，覆盖天花板的电感耦合等离子体源功率施加器，以及耦合到感应耦合的RF功率发生器 源电源施加器，电容耦合等离子体源功率施加器，其包括源功率电极，其以下之一：（a）天花板（b）工件支撑件以及耦合到电容耦合的源电力施加器的不同固定频率的多个VHF发电机， 以及控制器，用于独立地控制多个VHF发生器的功率输出电平，以便控制施加到源极功率电极的有效VHF频率。 在优选实施例中，反应器还包括等离子体偏置功率施加器，其包括工件支撑件中的偏置功率电极和耦合到等离子体偏置功率施加器的不同频率的一个或多个RF偏置功率发生器。

公开(公告)号：US20070246161A1

公开(公告)日：2007-10-25

申请号：US11410863

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23F1/00

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32706

摘要： A plasma reactor for processing a workpiece includes a reactor chamber and a workpiece support within the chamber, the chamber having a ceiling facing the workpiece support, a toroidal plasma source comprising a hollow reentrant conduit external of the chamber and having a pair of ends connected to the interior of the chamber and forming a closed toroidal path extending through the conduit and across the diameter of the workpiece support, and an RF power applicator adjacent a portion of the reentrant external conduit, and an RF source power generator coupled to the RF power applicator of the toroidal plasma source. The reactor further includes a capacitively coupled plasma source power applicator comprising a source power electrode at one of: (a) the ceiling (b) the workpiece support, and plural VHF power generators of different fixed frequencies coupled to the capacitively coupled source power applicator, and a controller for independently controlling the power output levels of the plural VHF generators so as to control an effective VHF frequency applied to the source power electrode.

摘要翻译： 用于处理工件的等离子体反应器包括反应室和腔室内的工件支撑件，腔室具有面向工件支撑件的天花板，环形等离子体源，其包括腔室外部的空心折返导管，并且具有连接到 腔室的内部并且形成延伸穿过导管并跨越工件支撑件的直径的封闭的环形路径，以及邻近可折入的外部导管的一部分的RF功率施加器，以及耦合到RF功率施加器的RF源功率发生器 的环形等离子体源。 反应器还包括电容耦合的等离子体源功率施加器，其包括源功率电极，其特征在于：（a）天花板（b）工件支架，以及耦合到电容耦合源功率施加器的不同固定频率的多个VHF发电机， 以及控制器，用于独立地控制多个VHF发生器的功率输出电平，以便控制施加到源极功率电极的有效VHF频率。

公开(公告)号：US20070245959A1

公开(公告)日：2007-10-25

申请号：US11410717

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23C16/00

CPC分类号： H01J37/321 ,  H01J37/32091 ,  H01J37/32165

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling plasma ion density by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入工艺区域，并通过控制VHF源功率的有效频率来控制等离子体离子密度。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。

公开(公告)号：US20070245958A1

公开(公告)日：2007-10-25

申请号：US11410698

申请日：2006-04-24

申请人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

发明人： Alexander Paterson ,  Valentin Todorow ,  Theodoros Panagopoulos ,  Brian Hatcher ,  Dan Katz ,  Edward Hammond ,  John Holland ,  Alexander Matyushkin

IPC分类号： C23C16/00

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/321

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling radial distribution of plasma ion density in the process region by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.

摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入过程区域，并且通过控制VHF源功率的有效频率来控制处理区域中的等离子体离子密度的径向分布。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。

公开(公告)号：US20060266735A1

公开(公告)日：2006-11-30

申请号：US11416468

申请日：2006-05-02

申请人： Steven Shannon ,  Alexander Paterson ,  Theodoros Panagopoulos ,  John Holland ,  Dennis Grimard ,  Daniel Hoffman

发明人： Steven Shannon ,  Alexander Paterson ,  Theodoros Panagopoulos ,  John Holland ,  Dennis Grimard ,  Daniel Hoffman

IPC分类号： G01L21/30

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/32431

摘要： A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first frequency; and supplying a second RF signal from the source to the first electrode at a second frequency selected to cause plasma sheath oscillation at the second frequency, wherein the second frequency is different from the first frequency by a differential equal to a desired frequency selected to cause plasma sheath oscillation at the desired frequency.

公开(公告)号：US20050090118A1

公开(公告)日：2005-04-28

申请号：US10823364

申请日：2004-04-12

申请人： Steven Shannon ,  Dennis Grimard ,  Theodoros Panagopoulos ,  Daniel Hoffman ,  Michael Chafin ,  Troy Detrick ,  Alexander Paterson ,  Jingbao Liu ,  Taeho Shin ,  Bryan Pu

发明人： Steven Shannon ,  Dennis Grimard ,  Theodoros Panagopoulos ,  Daniel Hoffman ,  Michael Chafin ,  Troy Detrick ,  Alexander Paterson ,  Jingbao Liu ,  Taeho Shin ,  Bryan Pu

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01J37/32082 ,  H01J37/32165

摘要： A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.

摘要翻译： 提供一种使用双频RF源控制半导体衬底处理室中的等离子体特性的方法和装置。 该方法包括向设置在处理室中的第一电极提供第一RF信号，并向第一电极提供第二RF信号，其中第一和第二RF信号之间的相互作用用于控制等离子体的至少一个特性 形成在处理室中。

公开(公告)号：US06617794B2

公开(公告)日：2003-09-09

申请号：US10016971

申请日：2001-12-14

申请人： Michael Barnes ,  John Holland ,  Valentin Todorov ,  Mohit Jain ,  Alexander Paterson

发明人： Michael Barnes ,  John Holland ,  Valentin Todorov ,  Mohit Jain ,  Alexander Paterson

IPC分类号： H01J724

CPC分类号： H01J37/32174 ,  H01J37/321

摘要： The present invention generally provides a method for processing a semiconductor substrate, wherein the method includes positioning a substrate in a processing chamber having at least a first and second coils positioned above the substrate and supplying a first electrical current to the first coil. The method further includes supplying a second current to the second coil and regulating a current ratio of electrical current supplied to the first and second coils with a power distribution network in communication with the first and second coils and a single power supply. The method may further include controlling plasma uniformity in a semiconductor processing chamber, wherein the control process includes positioning a first coil above the processing chamber, the first coil being concentrically positioned about a vertical axis of the processing chamber, and positioning a second coil above the processing chamber, the second coil being concentrically positioned about the vertical axis of the processing chamber and radially outward from the first coil. The control process may further include supplying electrical power to the first and second coils with a single power distribution network to selectively regulate a magnetic field intensity generated by the first and second coils above a workpiece in the processing chamber.